Nikolay Polyakov

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Publications in SciGraph latest 50 shown

  • 2011-04-16 Study of processes of self-catalyzed growth of gaas crystal nanowires by molecular-beam epitaxy on modified Si (111) surfaces in SEMICONDUCTORS
  • 2008-12-17 Specific features of formation of GaAs nanowire crystals during molecular beam epitaxy on different silicon surfaces in SEMICONDUCTORS
  • 2006-05 The effect of misorientation of the GaAs substrate on the properties of InAs quantum dots grown by low-temperature molecular beam epitaxy in SEMICONDUCTORS
  • 2006-01 A3B5 nanowhiskers: MBE growth and properties in CZECHOSLOVAK JOURNAL OF PHYSICS
  • 2005-09 The Stark shift of the hole states in separate InAs/GaAs quantum dots grown on (100) and (311)A GaAs substrates in SEMICONDUCTORS
  • 2005-06 The optical properties of heterostructures with quantum-confined InGaAsN layers on a GaAs substrate and emitting at 1.3–1.55 μm in SEMICONDUCTORS
  • 2005-01 The engineering and properties of InAs quantum dot molecules in a GaAs matrix in SEMICONDUCTORS
  • 2005-01 Localization of holes in an InAs/GaAs quantum-dot molecule in SEMICONDUCTORS
  • 2004-06 Spectroscopy of exciton states of InAs quantum molecules in SEMICONDUCTORS
  • 2004-04 The effect of exposure to arsenic flow on the optical properties of quantum dot arrays in the InAs/GaAs(100) system in TECHNICAL PHYSICS LETTERS
  • 2004-03 Dependence of structural and optical properties of QD arrays in an InAs/GaAs system on surface temperature and growth rate in SEMICONDUCTORS
  • 2003-12 Room-temperature 1.5–1.6 µm photoluminescence from InGaAs/GaAs heterostructures grown at low substrate temperature in SEMICONDUCTORS
  • 2003-08 Quantum dots in InAs layers of subcritical thickness on GaAs(100) in TECHNICAL PHYSICS LETTERS
  • 2003-07 Theoretical and experimental study of the effect of InAs growth rate on the properties of QD arrays in InAs/GaAs system in SEMICONDUCTORS
  • 2003-05 Structural and optical properties of InAs quantum dots in AlGaAs matrix in SEMICONDUCTORS
  • 2002-05 Photoluminescence in the 1.55 μm wavelength range in the InGaAs/GaAs system with quantum dots and wells in TECHNICAL PHYSICS LETTERS
  • 2002-03 Effect of the growth parameters on the electron structure of quantum dots in InGaAs/GaAs heterostructures in TECHNICAL PHYSICS LETTERS
  • 2000-11 The emission from the structures with arrays of coupled quantum dots grown by the submonolayer epitaxy in the spectral range of 1.3–1.4 µm in SEMICONDUCTORS
  • 2000-09 Nanostructured InSiAs solid solution grown by molecular beam epitaxy on the Si(001) surface in TECHNICAL PHYSICS LETTERS
  • 2000-07 Photoluminescence from multilayer InAs/GaAs structures with quantum dots in the 1.3–1.4 μm wavelength range in TECHNICAL PHYSICS LETTERS
  • 2000-07 Study of multilayer structures with InAs nanoobjects in a silicon matrix in SEMICONDUCTORS
  • 2000-05 Multilayer structures with quantum dots in the InAs/GaAs system emitting at a wavelength of 1.3 μm in TECHNICAL PHYSICS LETTERS
  • 2000-05 A computerized complex for recording and processing of reflected high-energy electron diffraction patterns in TECHNICAL PHYSICS
  • 2000 Structure and Optical Properties of Si/InAs/Si Layers Grown by MBE on Si Substrate at Different Temperatures in MRS ADVANCES
  • 1999-11 Effect of growth conditions on InAs nanoislands formation on Si(100) surface in CZECHOSLOVAK JOURNAL OF PHYSICS
  • 1999-10 Distinctive features of molecular-beam epitaxial growth of silicon on Si (100) surfaces in the presence of arsenic in SEMICONDUCTORS
  • 1999-09 Heteroepitaxial growth of InAs on Si: A new type of quantum dot in SEMICONDUCTORS
  • 1999 Inas Nanostructures in a Silicon Matrix: Growth and Properties in MRS ADVANCES
  • 1997-10 A RHEED study of the transition from two-dimensional to three-dimensional growth in the InAs/GaAs system in SEMICONDUCTORS
  • 1997-08 Formation of InGaAs/GaAs nanostructures by submonolayer deposition from molecular beams in SEMICONDUCTORS
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