Yu P Yakovlev

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Yu P



Publications in SciGraph latest 50 shown

  • 2020-12 Electroluminescence in Heterostructures GaSb/AlSb/InAsSb Due to Tunneling Mechanism of Radiative Recombination in SEMICONDUCTORS
  • 2018-09-06 Determining the Hydrogen Concentration from the Photovoltage of Pd–Oxide–InP MIS Structures in SEMICONDUCTORS
  • 2018-08-22 GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range in SEMICONDUCTORS
  • 2018-07-06 Photoconductivity Amplification in a Type-II n-GaSb/InAs/p-GaSb Heterostructure with a Single QW in SEMICONDUCTORS
  • 2017-11-16 Auger Recombination and Amplified Luminescence in InAsSb/InAsSbP Leds at 10–60 K in JOURNAL OF APPLIED SPECTROSCOPY
  • 2017-09-03 Collective modes in coupled semiconductor disk lasers in the case of whispering-gallery modes in SEMICONDUCTORS
  • 2017-02-24 Measurement of the water content in oil and oil products using IR light-emitting diode–photodiode optrons in TECHNICAL PHYSICS
  • 2016-10-11 Enhancement of the spectral sensitivity of photodiodes for the mid-IR spectral range in SEMICONDUCTORS
  • 2016-07-06 Photovoltage and photocurrent in Pd–oxide–InP structures in a hydrogen medium in SEMICONDUCTORS
  • 2016-06-17 Features of high-temperature electroluminescence in an LED n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers in SEMICONDUCTORS
  • 2015-12-10 Photoelectric properties of photodiodes based on InAs/InAsSbP heterostructures with photosensitive-area diameters of 0.1–2.0 mm in SEMICONDUCTORS
  • 2015-08 Mode synchronization in a laser with coupled disk cavities in TECHNICAL PHYSICS LETTERS
  • 2015-07-01 Light emitting diode–photodiode optoelectronic pairs based on the InAs/InAsSb/InAsSbP heterostructure for the detection of carbon dioxide in SEMICONDUCTORS
  • 2015-03-04 Electrical properties of Pd-oxide-InP structures in SEMICONDUCTORS
  • 2014-12-02 High-power LEDs based on InGaAsP/InP heterostructures in SEMICONDUCTORS
  • 2014-10-09 Electroluminescence properties of a whispering-gallery-mode laser with coupled disk cavities in SEMICONDUCTORS
  • 2013-09-05 High-temperature luminescence in an n-GaSb/n-InGaAsSb/p-AlGaAsSb light-emitting heterostructure with a high potential barrier in SEMICONDUCTORS
  • 2013-08-07 Photoelectric and luminescence properties of GaSb-Based nanoheterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown by metalorganic vapor-phase epitaxy in SEMICONDUCTORS
  • 2013-08-07 High-speed photodiodes for the mid-infrared spectral region 1.2–2.4 μm based on GaSb/GaInAsSb/GaAlAsSb heterostructures with a transmission band of 2–5 GHz in SEMICONDUCTORS
  • 2013-06-10 Temperature dependence of the threshold current in quantum-well WGM lasers (2.0–2.5 μm) in SEMICONDUCTORS
  • 2013-05-09 Improvement in the quantum sensitivity of InAs/InAsSb/InAsSbP heterostructure photodiodes in SEMICONDUCTORS
  • 2013-02 Increasing output power of LEDs (λ = 1.7–2.4 μm) by changing directions of reflected light fluxes in GaSb/GaInAsSb/GaAlAsSb heterostructures in TECHNICAL PHYSICS LETTERS
  • 2013-01-07 Superlinear electroluminescence in GaSb-based heterostructures with high potential barriers in SEMICONDUCTORS
  • 2012-07 Characterization of quantum-confinement whispering-gallery-mode lasers operating above room temperature in TECHNICAL PHYSICS LETTERS
  • 2012-05 Photodiodes based on InAs/InAsSb/InAsSbP heterostructures with quantum efficiency increased by changing directions of reflected light fluxes in TECHNICAL PHYSICS LETTERS
  • 2012-04 Mid-infrared radiation sources based on coupled disk cavities in TECHNICAL PHYSICS LETTERS
  • 2012-02-17 Study of the emission extraction efficiency of mesa-LEDs with a narrow-gap InAsSb active region in SEMICONDUCTORS
  • 2012-02 Anisotropic polarization of radiation in quantum-confinement whispering-gallery-mode lasers in TECHNICAL PHYSICS LETTERS
  • 2012-01-06 Electrical and electroluminescent properties of InAsSb-Based LEDs (λ = 3.85–3.95 μm) in the temperature interval 20–200°C in TECHNICAL PHYSICS
  • 2011-11-12 Effect of diffusion and fluctuations in the nonequilibrium charge carrier density on the angular distribution of the output intensity for injection lasers based on an InAsSb/InAsSbP heterostructure in JOURNAL OF APPLIED SPECTROSCOPY
  • 2011-11-11 Effect of temperature on the electroluminescent properties of mid-IR (λmax ≈ 4.4 μm) flip-chip LEDs based on an InAs/InAsSbP heterostructure in SEMICONDUCTORS
  • 2011-10-26 Room-temperature photodiodes based on InAs/InAs0.88Sb0.12/InAsSbP heterostructures for extended (1.5–4.8 μm) spectral range in TECHNICAL PHYSICS LETTERS
  • 2011-06 LEDs based on InAsSbP/InAsSb heterostructures (λ = 4.7 μm) for carbon monoxide detection in TECHNICAL PHYSICS LETTERS
  • 2011-04-16 Passivation of infrared photodiodes with alcoholic sulfide solution in SEMICONDUCTORS
  • 2011-04 Electroluminescent characteristics of InGaAsSb/GaAlAsSb heterostructure Mid-IR LEDs at high temperatures in TECHNICAL PHYSICS
  • 2011-03 Analysis of spatial modes in half-disk lasers based on AlGaAsSb/InGaAsSb quantum well nanoheterostructures in SEMICONDUCTORS
  • 2011-02-20 Photovoltaic detector based on type II heterostructure with deep AlSb/InAsSb/AlSb quantum well in the active region for the midinfrared spectral range in SEMICONDUCTORS
  • 2011-01-22 Technology of Cavity Fabrication for Whispering Gallery Modes Laser (m) in TERAHERTZ AND MID INFRARED RADIATION
  • 2011-01 Photodiodes based on InAs/InAs0.88Sb0.12/InAsSbP heterostructures for 2.5–4.9 μm spectral range in TECHNICAL PHYSICS LETTERS
  • 2010-07 Interference of emission from disk-shaped lasers based on quantum-confined AlGaAsSb/InGaAsSb nanoheterostructures in TECHNICAL PHYSICS LETTERS
  • 2010-05-28 Fast-response p-i-n photodiodes for 0.9–2.4 μm wavelength range in TECHNICAL PHYSICS LETTERS
  • 2010-05-09 Molecular beam epitaxy of thermodynamically metastable GaInAsSb alloys for medium IR-range photodetectors in SEMICONDUCTORS
  • 2010-04 Frequency tuning due to nonlinear effects in whispering gallery mode laser based on InAsSb/InAsSbP heterostructure in TECHNICAL PHYSICS LETTERS
  • 2010-02 LEDs (λmax = 3.6 μm) with cone-shaped light-emitting surfaces in TECHNICAL PHYSICS LETTERS
  • 2010-02 Portable optical water-and-oil analyzer based on a mid-IR (1.6–2.4 μm) optron consisting of an LED array and a wideband photodiode in TECHNICAL PHYSICS
  • 2010-02 High-power InAs/InAsSbP heterostructure leds for methane spectroscopy (λ ≈ 3.3 μm) in SEMICONDUCTORS
  • 2010-01-26 Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface in SEMICONDUCTORS
  • 2010-01 LEDs based on InAs/InAsSb heterostructures for CO2 spectroscopy (λ = 4.3 μm) in TECHNICAL PHYSICS LETTERS
  • 2009-12-24 Visual observation of frequency tuning in whispering gallery mode diode laser at room temperature in TECHNICAL PHYSICS LETTERS
  • 2009-12-24 Ray interference in tunable whispering gallery mode semiconductor laser in TECHNICAL PHYSICS LETTERS
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