NA Maleev


Ontology type: schema:Person     


Person Info

NAME

NA

SURNAME

Maleev

Publications in SciGraph latest 50 shown

  • 2017-11 Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors in SEMICONDUCTORS
  • 2016-10 Laser generation at 1.3 μm in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping in TECHNICAL PHYSICS LETTERS
  • 2016-10 Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture in SEMICONDUCTORS
  • 2016-10 A study of distributed dielectric bragg reflectors for vertically emitting lasers of the near-IR range in TECHNICAL PHYSICS LETTERS
  • 2015-01 Study of high-speed semiconductor VCSELs based on AlInGaAs heterostructures with large gain-cavity detuning in SEMICONDUCTORS
  • 2014-12 Precise calibration of thickness and composition of epitaxial AlGaAs heterostructures with vertical-cavity optical microresonators in TECHNICAL PHYSICS LETTERS
  • 2014-12 Effect of the photon lifetime on the characteristics of 850-nm vertical-cavity surface-emitting lasers with fully doped distributed Bragg reflectors and an oxide current aperture in SEMICONDUCTORS
  • 2014-01 Degradation-robust 850-nm vertical-cavity surface-emitting lasers for 25Gb/s optical data transmission in SEMICONDUCTORS
  • 2013-07 Single-spatial-mode semiconductor VCSELs with a nonplanar upper dielectric DBR in SEMICONDUCTORS
  • 2013-06 Influence of optical losses on the dynamic characteristics of linear arrays of near-infrared vertical-cavity surface-emitting lasers in SEMICONDUCTORS
  • 2013-01 Optical anisotropy of InGaAs quantum dots in SEMICONDUCTORS
  • 2012-02 Decreasing parasitic capacitance in vertical-cavity surface-emitting laser with selectively oxidized aperture in TECHNICAL PHYSICS LETTERS
  • 2011-12 Submicron surface relief fabrication technology for epitaxial GaAs structures with thin AlGaAs stop layers in TECHNICAL PHYSICS LETTERS
  • 2011-10 Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures in SEMICONDUCTORS
  • 2011-06 Matrices of 960-nm vertical-cavity surface-emitting lasers in SEMICONDUCTORS
  • 2009-12 Generation of π modes in semiconductor vertical-cavity surface-emitting lasers in TECHNICAL PHYSICS LETTERS
  • 2007-10 The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots in SEMICONDUCTORS
  • 2006-10 Experimental study of temperature dependence of threshold characteristics in semiconductor VCSELs based on submonolayer InGaAs QDs in SEMICONDUCTORS
  • 2006-09 Room-temperature 1.3-μm lasing in a microdisk with quantum dots in SEMICONDUCTORS
  • 2006-05 VCSELs based on arrays of sub-monolayer InGaAs quantum dots in SEMICONDUCTORS
  • 2006-04 Optical studies of asymmetric-waveguide submonolayer InGaAs QD microdisks formed by selective oxidation in SEMICONDUCTORS
  • 2005-07 Stresses in selectively oxidized GaAs/(AlGa)xOy structures in SEMICONDUCTORS
  • 2005-04 Design and fabrication technology for arrays for vertical-cavity surface-emitting lasers in SEMICONDUCTORS
  • 2004-06 High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates in SEMICONDUCTORS
  • 2004-05 Low-threshold 1.3-µm injection lasers based on single InGaAsN quantum wells in SEMICONDUCTORS
  • 2004-01 High-power single-mode 1.3-μm lasers based on InAs/AlGaAs/GaAs quantum dot heterostructures in TECHNICAL PHYSICS LETTERS
  • 2003-12 Lasing at 1.5 µm in quantum dot structures on GaAs substrates in SEMICONDUCTORS
  • 2003-10 Temperature characteristics of low-threshold high-efficiency quantum-dot lasers with the emission wavelength from 1.25 to 1.29 µm in SEMICONDUCTORS
  • 2003-10 Design and technology of vertical-cavity surface-emitting lasers with nonconducting epitaxial mirrors in SEMICONDUCTORS
  • 2003-09 Metamorphic lasers for 1.3-µm spectral range grown on GaAs substrates by MBE in SEMICONDUCTORS
  • 2002-11 High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates in SEMICONDUCTORS
  • 2001-09 1.55–1.6 μm electroluminescence of GaAs based diode structures with quantum dots in TECHNICAL PHYSICS LETTERS
  • 2000-05 Power conversion efficiency of quantum dot laser diodes in SEMICONDUCTORS
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