Alexei Dmitrivich Bouravleuv

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Alexei Dmitrivich



Publications in SciGraph latest 50 shown

  • 2021-10 High-Precision Characterization of Super-Multiperiod AlGaAs/GaAs Superlattices Using X-Ray Reflectometry on a Synchrotron Source in TECHNICAL PHYSICS LETTERS
  • 2021-08 Development of the Design of Super-Multiperiod Structures Grown by Molecular-Beam Epitaxy and Emitting in the Terahertz Range in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2020-12 Raman Spectroscopy of GaN Epitaxial Layers Synthesized on Si(111) by Molecular Beam Epitaxy with Nitridation in SEMICONDUCTORS
  • 2020-11-18 Deep X-Ray Reflectometry of Supermultiperiod A3B5 Structures with Quantum Wells Grown by Molecular-Beam Epitaxy in TECHNICAL PHYSICS
  • 2019-12-23 Electronic Structure of SiN Layers on Si(111) and SiC/Si(111) Substrates in SEMICONDUCTORS
  • 2019-12-04 Metal-Assisted Photochemical Etching of N- and Ga-Polar GaN Epitaxial Layers in SEMICONDUCTORS
  • 2019-09-03 On the Specific Features of the Plasma-Assisted MBE Synthesis of n+-GaN Layers on GaN/c-Al2O3 Templates in SEMICONDUCTORS
  • 2018-12 Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy in SEMICONDUCTORS
  • 2018-12 Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications in SEMICONDUCTORS
  • 2018-11-07 Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy in SEMICONDUCTORS
  • 2018-11-07 Solar Cell Based on Core/Shell Nanowires in SEMICONDUCTORS
  • 2018-04-17 The Features of GaAs Nanowire SEM Images in SEMICONDUCTORS
  • 2018-01 Ultrafast Dynamics of Photoinduced Electron–Hole Plasma in Semiconductor Nanowires in SEMICONDUCTORS
  • 2018-01 GaP/Si(111) Nanowire Crystals Synthesized by Molecular-Beam Epitaxy with Switching between the Hexagonal and Cubic Phases in SEMICONDUCTORS
  • 2017-09 Directional emission from beryllium doped GaAs/AlGaAs nanowires in TECHNICAL PHYSICS LETTERS
  • 2016-12 Surface passivation of GaAs nanowires by the atomic layer deposition of AlN in SEMICONDUCTORS
  • 2016-12 Polarization of the photoluminescence of quantum dots incorporated into quantum wires in SEMICONDUCTORS
  • 2016-12 Resonant features of the terahertz generation in semiconductor nanowires in SEMICONDUCTORS
  • 2016-11-06 Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon in SEMICONDUCTORS
  • 2015-02 Optical limiting in solutions of InP and GaAs nanowires and hybrid systems based on such nanocrystals in TECHNICAL PHYSICS LETTERS
  • 2014-03-07 Study of the electrical properties of individual (Ga,Mn)As nanowires in SEMICONDUCTORS
  • 2014-01 Raman spectra and structural peculiarities of GaAs nanowires in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2013-11-06 New method of determining the young’s Modulus of (Ga,Mn)As nanowhiskers with a scanning electron microscope in PHYSICS OF THE SOLID STATE
  • 2013-10-12 Effect of an arsenic flux on the molecular-beam epitaxy of self-catalytic (Ga,Mn)As nanowire crystals in SEMICONDUCTORS
  • 2013-08-07 (In,Mn)As quantum dots: Molecular-beam epitaxy and optical properties in SEMICONDUCTORS
  • 2013-06-16 Computer simulation of the structure and raman spectra of GaAs polytypes in PHYSICS OF THE SOLID STATE
  • 2013-06-10 Photovoltaic properties of GaAs:Be nanowire arrays in SEMICONDUCTORS
  • 2012-09 Molecular-beam epitaxy of (Ga,Mn)As crystal nanowires on surface GaAs(100) in TECHNICAL PHYSICS LETTERS
  • 2012-02-17 Formation of (Ga,Mn)As nanowires and study of their magnetic properties in SEMICONDUCTORS
  • 2011-07-10 Specific features of Raman spectra of III–V nanowhiskers in PHYSICS OF THE SOLID STATE
  • 2011-04-16 Study of processes of self-catalyzed growth of gaas crystal nanowires by molecular-beam epitaxy on modified Si (111) surfaces in SEMICONDUCTORS
  • 2009-11-14 Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate in NANOSCALE RESEARCH LETTERS
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