Elena V Bogdanova


Ontology type: schema:Person     


Person Info

NAME

Elena V

SURNAME

Bogdanova

Publications in SciGraph latest 50 shown

  • 2015-12 On the relationship between radiation-stimulated photoluminescence and nitrogen atoms in p-4H-SiC in TECHNICAL PHYSICS LETTERS
  • 2015-10-13 Radiation hardness of n-GaN schottky diodes in SEMICONDUCTORS
  • 2015-09-03 Effect of irradiation with MeV protons and electrons on the conductivity compensation and photoluminescence of moderately doped p-4H-SiC (CVD) in SEMICONDUCTORS
  • 2015-05 The long-range effect in 6H-SiC under irradiation with Xe ions in TECHNICAL PHYSICS LETTERS
  • 2015-04-16 Irradiation of 4H-SiC UV detectors with heavy ions in SEMICONDUCTORS
  • 2014-08-06 Conductivity compensation in n-4H-SiC (CVD) under irradiation with 0.9-MeV electrons in SEMICONDUCTORS
  • 2014-02-14 Optical and electrical properties of 4H-SiC irradiated with Xe ions in SEMICONDUCTORS
  • 2012-10 Annealing of radiation-compensated silicon carbide in TECHNICAL PHYSICS LETTERS
  • 2011-09-17 Conductivity compensation in p-6H-SiC in irradiation with 8-MeV protons in SEMICONDUCTORS
  • 2011-03-30 Effect of the silicon doping level and features of nanostructural arrangement on decrease in external quantum efficiency in InGaN/GaN light-emitting diodes with increasing current in SEMICONDUCTORS
  • 2010-06 Studying edge luminescence of n-3C-SiC epilayers grown on 6H-SiC substrates in TECHNICAL PHYSICS LETTERS
  • 2010-06 Use of sublimation epitaxy for obtaining volume 3C-SiC crystals in TECHNICAL PHYSICS LETTERS
  • 2009-06-09 Study of the 3C-SiC layers grown on the 15R-SiC substrates in SEMICONDUCTORS
  • 2007-03 A study of thick 3C-SiC epitaxial layers grown on 6H-SiC substrates by sublimation epitaxy in vacuum in SEMICONDUCTORS
  • 2007-01 Instability of characteristics of SiC detectors subjected to extreme fluence of nuclear particles in SEMICONDUCTORS
  • 2005-06 A 4H-SiCp-i-n diode fabricated by a combination of sublimation epitaxy and CVD in SEMICONDUCTORS
  • 2004-10 Formation and study of buried SiC layers with a high content of radiation defects in SEMICONDUCTORS
  • 2002-12 Investigation of the p−-3C-SiC/n+-6H-SiC heterostructures with modulated doping in TECHNICAL PHYSICS LETTERS
  • 2002-10 Crystallization of amorphous hydrogenated silicon films deposited under various conditions in SEMICONDUCTORS
  • 2002-03 The use of SiC triode structures as detectors of nuclear particles in SEMICONDUCTORS
  • 2001-12 Effect of structural imperfection on the spectrum of deep levels in 6H-SiC in SEMICONDUCTORS
  • 2001-05 Silicon network in a-Si:H films containing ordered inclusions in SEMICONDUCTORS
  • 2000-09 Nanostructured a-Si:H films obtained by silane decomposition in a magnetron chamber in SEMICONDUCTORS
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