Ekaterina V Nikitina


Ontology type: schema:Person     


Person Info

NAME

Ekaterina V

SURNAME

Nikitina

Publications in SciGraph latest 50 shown

  • 2020-06-03 Correcting the Characteristics of Silicon Photodiodes by Ion Implantation in SEMICONDUCTORS
  • 2020-04-28 Optical Properties of GaN/SiC/por-Si/Si(111) Hybrid Heterostructures in SEMICONDUCTORS
  • 2019-12-23 Photoluminescence and Transmission Electron Microscopy Methods for Characterization of Super-Multiperiod A3B5 Quantum Well Structures in SEMICONDUCTORS
  • 2019-12-04 Metal-Assisted Photochemical Etching of N- and Ga-Polar GaN Epitaxial Layers in SEMICONDUCTORS
  • 2019-09-03 On the Specific Features of the Plasma-Assisted MBE Synthesis of n+-GaN Layers on GaN/c-Al2O3 Templates in SEMICONDUCTORS
  • 2019-02 Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Substrates and SiC/Si(111) Epitaxial Layers in SEMICONDUCTORS
  • 2019-01 Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial InxGa1 –xN/Si(111) Heterostructures with a Nanocolumnar Film Morphology in SEMICONDUCTORS
  • 2018-12-27 Experimental Study of Spontaneous Emission in the Bragg Multiple Quantum Wells Structure of InAs Monolayers Embedded in a GaAs Matrix in SEMICONDUCTORS
  • 2018-12 Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy in SEMICONDUCTORS
  • 2018-12 Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications in SEMICONDUCTORS
  • 2018-11-07 Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy in SEMICONDUCTORS
  • 2018-06-07 Experimental Study of Spontaneous Emission in Bragg Multiple- Quantum-Well Structures with InAs Single-Layer Quantum Wells in SEMICONDUCTORS
  • 2018-04-17 Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy in SEMICONDUCTORS
  • 2017-11 The effect of nitridation parameters and initial growth conditions on the polarity of GaN epitaxial layers grown by plasma-assisted molecular-beam epitaxy on Si(111) substrates in TECHNICAL PHYSICS LETTERS
  • 2017-09 The influence of metamorphic-buffer layer design on the retention of characteristics of InGaAs/GaAs metamorphic HEMT in TECHNICAL PHYSICS LETTERS
  • 2017-02-10 Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates in SEMICONDUCTORS
  • 2016-10-19 Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy in PHYSICS OF THE SOLID STATE
  • 2016-10-11 Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 μm in SEMICONDUCTORS
  • 2016-10 Laser generation at 1.3 μm in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping in TECHNICAL PHYSICS LETTERS
  • 2016-05-15 GaAs/InGaAsN heterostructures for multi-junction solar cells in SEMICONDUCTORS
  • 2016-03 The influence of an In0.52Al0.48As transition layer design on the transport characteristics of a metamorphic high-electron-mobility transistor in TECHNICAL PHYSICS LETTERS
  • 2015-11-04 Lasing of multiperiod quantum-cascade lasers in the spectral range of (5.6–5.8)-μm under current pumping in SEMICONDUCTORS
  • 2015-11-04 Study of multiple InAs/GaAs quantum-well structures by electroreflectance spectroscopy in SEMICONDUCTORS
  • 2015-10-12 Super-radiant mode in InAs—monolayer–based Bragg structures in SCIENTIFIC REPORTS
  • 2015-06-19 Diffusive Propagation of Exciton-Polaritons through Thin Crystal Slabs in SCIENTIFIC REPORTS
  • 2015-04-16 Admittance spectroscopy of solar cells based on GaPNAs layers in SEMICONDUCTORS
  • 2015-04-16 Photoluminescence of heterostructures with GaP1 − xNx and GaP1 − x − yNxAsy layers grown on GaP and Si substrates by molecular-beam epitaxy in SEMICONDUCTORS
  • 2015-04-16 MBE growth of GaP on a Si substrate in SEMICONDUCTORS
  • 2015-02-05 Control over the morphology of AlN during molecular beam epitaxy with the plasma activation of nitrogen on Si (111) substrates in SEMICONDUCTORS
  • 2014-12-02 Multiperiod quantum-cascade nanoheterostructures: Epitaxy and diagnostics in SEMICONDUCTORS
  • 2014-12-02 Effect of the photon lifetime on the characteristics of 850-nm vertical-cavity surface-emitting lasers with fully doped distributed Bragg reflectors and an oxide current aperture in SEMICONDUCTORS
  • 2014-06-12 Evaluation of the quality of GaAs epitaxial layers and their interfaces from analysis of the exciton absorption spectra in SEMICONDUCTORS
  • 2014-04-17 Ultra-wide electroluminescence spectrum of LED heterostructures based on GaPAsN semiconductor alloys in SEMICONDUCTORS
  • 2014-03-07 Molecular beam epitaxy of GaPN, GaPAsN, and InGaPN nitride solid solutions in SEMICONDUCTORS
  • 2014-03-07 Design of multijunction GaPNAs/Si heterostructure solar cells by computer simulation in SEMICONDUCTORS
  • 2013-12-28 Dependence of the hybridization parameter on nitrogen molar fraction in nitrogen-containing GaPN solid solutions in TECHNICAL PHYSICS LETTERS
  • 2013-12-28 Photoelectric properties of solar cells based on GaPNAs/GaP heterostructures in TECHNICAL PHYSICS LETTERS
  • 2012-08-06 Resonance reflection of light by a periodic system of excitons in GaAs/AlGaAs quantum wells in SEMICONDUCTORS
  • 2012-06-05 Electroluminescence of GaPxNyAs1 − x − y nanoheterostructures through a transparent electrode made of CVD graphene in SEMICONDUCTORS
  • 2011-06-18 Matrices of 960-nm vertical-cavity surface-emitting lasers in SEMICONDUCTORS
  • 2010-07-22 Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures in SEMICONDUCTORS
  • 2007-05 Injection lasers with a broad emission spectrum on the basis of self-assembled quantum dots in SEMICONDUCTORS
  • 2005-07 Stresses in selectively oxidized GaAs/(AlGa)xOy structures in SEMICONDUCTORS
  • 2005-04 Design and fabrication technology for arrays for vertical-cavity surface-emitting lasers in SEMICONDUCTORS
  • 2004-08 Lasing wavelength of quantum dot heterostructures controlled within the 1.3–0.85 μm range by means of high-temperature annealing in TECHNICAL PHYSICS LETTERS
  • 2004-06 High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates in SEMICONDUCTORS
  • 2004-05 Low-threshold 1.3-µm injection lasers based on single InGaAsN quantum wells in SEMICONDUCTORS
  • 2004-01 High-power single-mode 1.3-μm lasers based on InAs/AlGaAs/GaAs quantum dot heterostructures in TECHNICAL PHYSICS LETTERS
  • 2003-12 Lasing at 1.5 µm in quantum dot structures on GaAs substrates in SEMICONDUCTORS
  • 2003-09 Metamorphic lasers for 1.3-µm spectral range grown on GaAs substrates by MBE in SEMICONDUCTORS
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