O E Tereshchenko


Ontology type: schema:Person     


Person Info

NAME

O E

SURNAME

Tereshchenko

Publications in SciGraph latest 50 shown

  • 2018-12 Dirac cone intensity asymmetry and surface magnetic field in V-doped and pristine topological insulators generated by synchrotron and laser radiation in SCIENTIFIC REPORTS
  • 2018-10 Subcycle observation of lightwave-driven Dirac currents in a topological surface band in NATURE
  • 2018-04 Impact of Ultrathin Pb Films on the Topological Surface and Quantum-Well States of Bi2Se3 and Sb2Te3 Topological Insulators in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2018-03 A Study of the Crystal Structure of Co40Fe40B20 Epitaxial Films on a Bi2Te3 Topological Insulator in TECHNICAL PHYSICS LETTERS
  • 2017-12 Solar energy converters based on multi-junction photoemission solar cells in SCIENTIFIC REPORTS
  • 2017-12 Prolonged duration of nonequilibrated Dirac fermions in neutral topological insulators in SCIENTIFIC REPORTS
  • 2017-12 Giant Magnetic Band Gap in the Rashba-Split Surface State of Vanadium-Doped BiTeI: A Combined Photoemission and Ab Initio Study in SCIENTIFIC REPORTS
  • 2017-12 Spin-resolved band structure of heterojunction Bi-bilayer/3D topological insulator in the quantum dimension regime in annealed Bi2Te2.4Se0.6 in SCIENTIFIC REPORTS
  • 2017-12 Properties of methylammonium lead iodide perovskite single crystals in JOURNAL OF STRUCTURAL CHEMISTRY
  • 2016-09 Optical properties and electronic structure of BiTeCl and BiTeBr compounds in OPTICS AND SPECTROSCOPY
  • 2016-08 Surface spin-polarized currents generated in topological insulators by circularly polarized synchrotron radiation and their photoelectron spectroscopy indication in PHYSICS OF THE SOLID STATE
  • 2016-06-27 Dual nature of magnetic dopants and competing trends in topological insulators in NATURE COMMUNICATIONS
  • 2016-05-18 Spin-texture inversion in the giant Rashba semiconductor BiTeI in NATURE COMMUNICATIONS
  • 2016-04 Specific features of the electronic, spin, and atomic structures of a topological insulator Bi2Te2.4Se0.6 in PHYSICS OF THE SOLID STATE
  • 2015-04 Role of anisotropy and spin-orbit interaction in the optical and dielectric properties of BiTeI and BiTeCl compounds in JETP LETTERS
  • 2014-12 Signatures of Dirac fermion-mediated magnetic order in NATURE COMMUNICATIONS
  • 2014-11 Optical properties of BiTeI semiconductor with a strong Rashba spin-orbit interaction in OPTICS AND SPECTROSCOPY
  • 2014-03 Effect of fluorine on the electrical properties of anodic oxide/InAs(111)A interface in SEMICONDUCTORS
  • 2014-01 Dynamics of the BiTeI lattice at high pressures in JETP LETTERS
  • 2013-04 Study of the morphology and optical properties of anodic oxide layers on InAs (111)III in SEMICONDUCTORS
  • 2012-09 Quick ellipsometric technique for determining the thicknesses and optical constant profiles of Fe/SiO2/Si(100) nanostructures during growth in TECHNICAL PHYSICS
  • 2012-04 Formation of anodic layers on InAs (111)III. Study of the chemical composition in SEMICONDUCTORS
  • 2012-01 Change in the electronic properties of an InAs (111)A surface at oxygen and fluorine adsorption in SEMICONDUCTORS
  • 2012-01 Forming interface in Pd/Fe/GaAs/InGaAs structure for optical detector of free-electron spin in TECHNICAL PHYSICS LETTERS
  • 2011-11 Stability of the (0001) surface of the Bi2Se3 topological insulator in JETP LETTERS
  • 2011-07 Surfactant properties of cesium in molecular beam epitaxy of GaAs(100) in JETP LETTERS
  • 2011-01 Chlorine adsorption on the InAs (001) surface in SEMICONDUCTORS
  • 2010-05 Reconstruction dependence of the etching and passivation of the GaAs(001) surface in JETP LETTERS
  • 2009-04 New Ga-enriched reconstructions on the GaAs(001) surface in JETP LETTERS
  • 2008-12 Energy threshold of Cs-induced chemisorption of oxygen on a GaAs(Cs, O) surface in JETP LETTERS
  • 2008-01 Reversible superstructural transitions on the GaAs(001) surface under the selective effect of iodine and cesium in JETP LETTERS
  • 2004-10 Low-temperature method of cleaning p-GaN(0001) surfaces for photoemitters with effective negative electron affinity in PHYSICS OF THE SOLID STATE
  • 2004-05 Energy distributions of photoelectrons emitted from p-GaN(Cs, O) with effective negative electron affinity in JETP LETTERS
  • 2004-02 Decrease in the bond energy of arsenic atoms on the GaAs(100)-(2×4)/c(2×8) surface due to the effect of adsorbed cesium in JETP LETTERS
  • 1999-10 Cs/GaAs(100) surface: Two-dimensional metal or Hubbard insulator? in JETP LETTERS
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