N N Ledentsov


Ontology type: schema:Person     


Person Info

NAME

N N

SURNAME

Ledentsov

Publications in SciGraph latest 50 shown

  • 2018-01 Vertical-Cavity Surface-Emitting 1.55-μm Lasers Fabricated by Fusion in TECHNICAL PHYSICS LETTERS
  • 2018-01 A Design and New Functionality of Antiwaveguiding Vertical-Cavity Surface-Emitting Lasers for a Wavelength of 850 nm in TECHNICAL PHYSICS LETTERS
  • 2012-11 Influence of the position of InGaAs quantum dot array on the spectral characteristics of AlGaAs/GaAs photovoltaic converters in TECHNICAL PHYSICS LETTERS
  • 2006-05 VCSELs based on arrays of sub-monolayer InGaAs quantum dots in SEMICONDUCTORS
  • 2005-10 Nonequilibrium room-temperature carrier distribution in InAs quantum dots overgrown with thin AlAs/InAlAs layers in SEMICONDUCTORS
  • 2005-06 The optical properties of heterostructures with quantum-confined InGaAsN layers on a GaAs substrate and emitting at 1.3–1.55 μm in SEMICONDUCTORS
  • 2005-02 Process of fabricating semiconductor microcavities and photon crystals in TECHNICAL PHYSICS
  • 2004-07 Optical and structural properties of InAs quantum dot arrays grown in an InxGa1−xAs matrix on a GaAs substrate in SEMICONDUCTORS
  • 2004-01 Si/Ge nanostructures for optoelectronics applications in PHYSICS OF THE SOLID STATE
  • 2004 Epitaxy of Nanostructures in NONE
  • 2002 Long-Wavelength InGaAs/GaAs Quantum Dot Lasers in NANO-OPTOELECTRONICS
  • 2001-10 Study of electron capture by quantum dots using deep-level transient spectroscopy in SEMICONDUCTORS
  • 2001-03 Composition analysis of coherent nanoinsertions of solid solutions on the basis of high-resolution electron micrographs in SEMICONDUCTORS
  • 2001-03 InAs/Si-Based Quantum-Dot Heterostructures for New-Generation Optoelectronic and Microelectronic Devices in RUSSIAN MICROELECTRONICS
  • 2001-03 Record power characteristics of InGaAs/AlGaAs/GaAs heterostructure lasers in SEMICONDUCTORS
  • 2001 Light-exciton coupling in semiconductor microcavities of cylindrical and spherical symmetry in PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS PART I
  • 2000-05 InGaAs-GaAs quantum dots for application in long wavelength (1.3 µm) resonant vertical cavity enhanced devices in JOURNAL OF ELECTRONIC MATERIALS
  • 2000-05 Electromagnetic response of 3D arrays of quantum dots in JOURNAL OF ELECTRONIC MATERIALS
  • 2000-02 Thermal annealing of defects in InGaAs/GaAs heterostructures with three-dimensional islands in SEMICONDUCTORS
  • 1999-09 Quantum dot lasers: The birth and future trends in SEMICONDUCTORS
  • 1999-06 Quantum-dot injection heterolaser with 3.3 W output power in TECHNICAL PHYSICS LETTERS
  • 1999-05 Three-dimensionally confined excitons and biexcitons in submonolayer-CdSe/ZnSe superlattices in JOURNAL OF ELECTRONIC MATERIALS
  • 1999-05 Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition in JOURNAL OF ELECTRONIC MATERIALS
  • 1999-05 Emission of electrons from the ground and first excited states of self-organized InAs/GaAs quantum dot structures in JOURNAL OF ELECTRONIC MATERIALS
  • 1998-05 Structural characterization of self-organized nanostructures in PHYSICS OF THE SOLID STATE
  • 1998-03 Injection lasers based on InGaAs quantum dots in an AlGaAs matrix in JOURNAL OF ELECTRONIC MATERIALS
  • 1997-11 Self-organization of quantum dots in multilayer InAs/GaAs and InGaAs/GaAs structures by submonolayer migration-stimulated epitaxy in TECHNICAL PHYSICS LETTERS
  • 1997-08 Formation of InGaAs/GaAs nanostructures by submonolayer deposition from molecular beams in SEMICONDUCTORS
  • 1997-08 Luminescence properties of InAs/GaAs quantum dots prepared by submonolayer migration-stimulated epitaxy in SEMICONDUCTORS
  • 1997-04 Direct formation of InGaAs/GaAs quantum dots during submonolayer epitaxies from molecular beams in CZECHOSLOVAK JOURNAL OF PHYSICS
  • 1994 Nonlinear Optical Studies of Microstructured GaAs/AlAs in ULTRAFAST PHENOMENA IX
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