Tatiana S Argunova

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Tatiana S



Publications in SciGraph latest 50 shown

  • 2020-09-14 Third International Conference “Physics for Life Sciences” Study of Dentin Structural Features by Computed Microtomography and Transmission Electron Microscopy in TECHNICAL PHYSICS
  • 2020-05 A Model of Microcrack Development in Human Tooth Dentin Using Data of Microtomography in TECHNICAL PHYSICS LETTERS
  • 2017-01-02 Microstructure and strength of AlN–SiC interface studied by synchrotron X-rays in JOURNAL OF MATERIALS SCIENCE
  • 2016-11-15 Study of a macrodefect in a silicon carbid single crystal by means of X-ray phase contrast in CRYSTALLOGRAPHY REPORTS
  • 2015-12-15 Prevention of AlN crystal from cracking on SiC substrates by evaporation of the substrates in PHYSICS OF THE SOLID STATE
  • 2015-04-16 Mechanisms of the formation of morphological features of micropipes in bulk crystals of silicon carbide in PHYSICS OF THE SOLID STATE
  • 2012-09 On the cause of a contrast change in the SR images of micropipes in SiC in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2011-09-18 X-ray imaging of structural defects in Si1−xGex single crystals using a white synchrotron beam in CRYSTALLOGRAPHY REPORTS
  • 2011-07 Reverse recovery of Si/Si1 − xGex heterodiodes fabricated by direct bonding in TECHNICAL PHYSICS LETTERS
  • 2011-02-20 Features in phase-contrast images of micropipes in SiC in white synchrotron radiation beam in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2010-08-18 Structural and electrical properties of SiGe-on-insulator substrates fabricated by direct bonding in SEMICONDUCTORS
  • 2008-12-23 Current-voltage characteristics of Si/Si1 − xGex heterodiodes fabricated by direct bonding in TECHNICAL PHYSICS LETTERS
  • 2008-12-17 Computer simulation of phase-contrast images in white synchrotron radiation using micropipes in silicon carbide in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2007-08 Current-voltage characteristics of isotype SiC-SiC junctions fabricated by direct wafer bonding in SEMICONDUCTORS
  • 2007-06 Structural and electrical properties of the GexSi1−x/Si heterojunctions obtained by the method of direct bonding in SEMICONDUCTORS
  • 2007-06 Composition inhomogeneity and structural defects in Czochralski grown GexSi1 − x solid solution crystals in TECHNICAL PHYSICS LETTERS
  • 2006-05 Direct bonding of silicon carbide wafers with a regular relief at the interface in TECHNICAL PHYSICS LETTERS
  • 2005-07 X-ray studies of Si1−xGex single crystals in PHYSICS OF THE SOLID STATE
  • 2003-10 The influence of defects in the crystal structure on helium diffusion in quartz in PHYSICS OF THE SOLID STATE
  • 2002-10 Synchrotron radiography and x-ray topography studies of hexagonal habitus SiC bulk crystals in JOURNAL OF MATERIALS RESEARCH
  • 2001-06 Direct bonding of silicon wafers with the concurrent formation of diffusion layers in TECHNICAL PHYSICS
  • 1999-11 Reduction of elastic strains in directly-bonded silicon structures in PHYSICS OF THE SOLID STATE
  • 1997-02 Application of X-ray diffraction in Laue geometry to imperfect near-surface layers in IL NUOVO CIMENTO D
  • 1990 LPE Growth and Characterization of InAsSbP/In1-x GaxAs1-ySby /InAsSbP (X≥O,Y≥O) Heterostructures for Long Wavelength ( λ>3μm) Leds and Lasers. in MRS ADVANCES
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