И Н Arsent’Ev


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Person Info

NAME

И Н

SURNAME

Arsent’Ev

Publications in SciGraph latest 50 shown

  • 2014-11 Structure and optical properties of thin Al2O3 films deposited by the reactive ion-plasma sputtering method on GaAs (100) substrates in SEMICONDUCTORS
  • 2014-02 Passivation of the GaP(111) surface by treatment in selenium vapors in TECHNICAL PHYSICS LETTERS
  • 2013-10 Photoluminescence properties of heavily doped heterostructures based on (AlxGa1 − xAs)1 − ySiy solid solutions in PHYSICS OF THE SOLID STATE
  • 2013-10 X-ray diffraction studies of heterostructures based on solid solutions AlxGa1 − xAsyP1 − y: Si in PHYSICS OF THE SOLID STATE
  • 2013-01 Semiconductor lasers with internal wavelength selection in SEMICONDUCTORS
  • 2009-12 Water adlayers on aluminum oxide thin films in TECHNICAL PHYSICS
  • 2009-08 The effects of the porous buffer layer and doping with dysprosium on internal stresses in the GaInP:Dy/por-GaAs/GaAs(100) heterostructures in SEMICONDUCTORS
  • 2008-09 Composition and parameters of domains resulting from spinodal decomposition of quaternary alloys in epitaxial GaInP/GaxIn1 − xAsyP1 − y/GaInP/GaAs(001) heterostructures in SEMICONDUCTORS
  • 2008-09 Infrared reflection spectra of multilayer epitaxial heterostructures with embedded InAs and GaAs layers in SEMICONDUCTORS
  • 2008-05 Passivating gallium arsenide surface by gallium chalcogenide in TECHNICAL PHYSICS LETTERS
  • 2008-02 Scaled nano-and microrelief of ordering regions in AlxGa1 − x As/GaAs(100) epitaxial heterostructures in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2007-10 Double-band generation in quantum-well semiconductor laser at high injection levels in SEMICONDUCTORS
  • 2007-08 Saturation of light-current characteristics of high-power laser diodes (λ = 1.0–1.8 μm) under pulse operation in SEMICONDUCTORS
  • 2006-08 Beryllium diffusion and influence on the luminescent and electrical properties of indium phosphide in TECHNICAL PHYSICS LETTERS
  • 2006-07 Photovoltaic converters based on GaAs and AlGaAs epitaxial layers on GaAs substrates with developed surface area in SEMICONDUCTORS
  • 2006-06 Diffusion-barrier contacts based on the TiN and Ti(Zr)Bx interstitial phases in the microwave diodes for the range of 75–350 GHz in SEMICONDUCTORS
  • 2006-04 Infrared reflectance spectra and morphologic features of the surface of epitaxial AlxGa1−xAs/GaAs(100) heterostructures with the ordered AlGaAs2 phase in SEMICONDUCTORS
  • 2005-09 Formation of nanostructures in a Ga2Se3/GaAs system in SEMICONDUCTORS
  • 2005-03 Vegard’s law and superstructural phases in AlxGa1−xAs/GaAs(100) epitaxial heterostructures in SEMICONDUCTORS
  • 2005-02 Using axisymmetric potential in modeling crystal growth from melt in TECHNICAL PHYSICS LETTERS
  • 2003-08 Synchrotron investigations of an electron energy spectrum in III–V-based nanostructures in SEMICONDUCTORS
  • 2002-09 Structural and electrical characteristics of epitaxial InP layers on porous substrates and the parameters of related Au-Ti Schottky barriers in TECHNICAL PHYSICS LETTERS
  • 2002-07 On the possible mechanism of crystal growth from melt under zero gravity conditions in TECHNICAL PHYSICS LETTERS
  • 2001-11 MOCVD-grown broad area InGaAs/GaAs/InGaP laser diodes in SEMICONDUCTORS
  • 1999-12 Position of the Fermi level on an indium arsenide surface treated in sulfur vapor in SEMICONDUCTORS
  • 1999-06 Electron states in the surface region of gallium arsenide treated in selenium and arsenic vapor in SEMICONDUCTORS
  • 1999-06 Reconstruction and electron states of a Ga2Se3-GaAs heterointerface in SEMICONDUCTORS
  • 1998-11 Multiwell laser heterostructures fabricated by liquid-phase epitaxy in TECHNICAL PHYSICS LETTERS
  • 1998-06 Surface mobility and distribution of electrons in the accumulation layer of Ga2Se3/GaAs heterostructures in SEMICONDUCTORS
  • 1998-06 Self-organizing nanoheterostructures in InGaAsP solid solutions in SEMICONDUCTORS
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