Alexey N Kuznetsov


Ontology type: schema:Person     


Person Info

NAME

Alexey N

SURNAME

Kuznetsov

Publications in SciGraph latest 50 shown

  • 2009-03-11 Metal-insulator transition in n-3C-SiC epitaxial films in SEMICONDUCTORS
  • 2007-12 Galvanomagnetic properties of 3C-SiC epilayers grown on hexagonal SiC substrates in TECHNICAL PHYSICS LETTERS
  • 2007-10-11 Negative magnetoresistance in SiC heteropolytype junctions in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS
  • 2006-12 A study of n+-6H/n-3C/p+-6H-SiC heterostructures grown by sublimation epitaxy in SEMICONDUCTORS
  • 2005-12 Electrical properties of n-GaN/p-SiC heterojunctions in SEMICONDUCTORS
  • 2005-10 Study of the properties of a two-dimensional electron gas in p−-3C-SiC/n+-6H-SiC heterostructures at low temperatures in SEMICONDUCTORS
  • 2003-05 Semi-insulating silicon carbide layers obtained by diffusion of vanadium into porous 4H-SiC in SEMICONDUCTORS
  • 2003-04 3C-SiC p-n structures grown by sublimation on 6H-SiC substrates in SEMICONDUCTORS
  • 2002-12 Investigation of the p−-3C-SiC/n+-6H-SiC heterostructures with modulated doping in TECHNICAL PHYSICS LETTERS
  • 2002-09 Electrical characteristics of (p)3C-SiC-(n)6H-SiC heterojunctions in TECHNICAL PHYSICS LETTERS
  • 2001-07 Erbium electroluminescence in an Al/a-Si:H(Er)/p-c-Si/Al heterostructure in TECHNICAL PHYSICS LETTERS
  • 2001-05 Silicon network in a-Si:H films containing ordered inclusions in SEMICONDUCTORS
  • 2000-09 Nanostructured a-Si:H films obtained by silane decomposition in a magnetron chamber in SEMICONDUCTORS
  • 2000-01 Modifications of the structure and electrical parameters of the films of amorphous hydrogenated silicon implanted with Si+ ions in SEMICONDUCTORS
  • 1999-02 Erbium electroluminescence excitation in amorphous hydrogenated silicon under thermally stimulated deep-center tunneling ionization in PHYSICS OF THE SOLID STATE
  • 1998-11 Influence of oxygen on the photoluminescence intensity of erbium (at 1.54 µm) in erbium-doped a-Si:H films in SEMICONDUCTORS
  • 1998 Hydrogen'S Effect on Stability of Undoped A-Si:H Under Light Soaking in MRS ADVANCES
  • 1997-07 Photoluminescence of erbium in amorphous hydrogenated phosphorus-doped silicon in SEMICONDUCTORS
  • 1997-07 Characteristic structural features of amorphous hydrated silicon films deposited by direct-currect decomposition of silane in a magnetic field in SEMICONDUCTORS
  • 1997 Structure and Electronic Parameters of A-Si:H Deposited by DC-MASD in MRS ADVANCES
  • 1997 Room-Temperature Photoluminescence of Amorphous Hydrogenated Silicon Carbide Doped With Erbium in PHYSICS AND APPLICATIONS OF NON-CRYSTALLINE SEMICONDUCTORS IN OPTOELECTRONICS
  • 1996 Photo- and Electroluminescence Study of Excitation Mechanism of Er Luminescence in a-Si:ff(Er) in MRS ADVANCES
  • 1996 A-Si:H Films Deposited by Dc-Masd Technique at High Substrate Temperature in MRS ADVANCES
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