L G Lavrent'Eva


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Person Info

NAME

L G

SURNAME

Lavrent'Eva

Publications in SciGraph latest 50 shown

  • 2004-01 Excess arsenic and point defects in GaAS grown by molecular beam epitaxy at low temperatures in JOURNAL OF STRUCTURAL CHEMISTRY
  • 2003-09 Effect of growth conditions on incorporation of Si into Ga and As sublattices of GaAs during molecular-beam epitaxy in SEMICONDUCTORS
  • 2002-10 Effect of the Arsenic Concentration on the Characteristics of the Growth Step Echelon in GaAs Epitaxy in RUSSIAN PHYSICS JOURNAL
  • 2002-09 Doping of GaAs layers with Si under conditions of low-temperature molecular beam epitaxy in SEMICONDUCTORS
  • 2002-08 Low-Temperature Molecular-Beam Epitaxy of GaAs: Effect of Excess Arsenic on the Structure and Properties of the GaAs Layers in RUSSIAN PHYSICS JOURNAL
  • 2002-06 Interaction of Growth Steps on the Surface of InAs Epitaxial Layers in Vapor-Phase Epitaxy in RUSSIAN PHYSICS JOURNAL
  • 2002-05 Study of the Surface Processes in Vapor-Phase Epitaxial GaAs: Asymmetric Trapping of Atoms at the Step in RUSSIAN PHYSICS JOURNAL
  • 2002-04 Influence of the Substrate Orientation on the Silicon Capture into A- and B- Sublattices of Gallium Arsenide in Molecular Beam Epitaxy in RUSSIAN PHYSICS JOURNAL
  • 2002-01 Low-temperature molecular beam epitaxy of GaAs: Influence of crystallization conditions on structure and properties of layers in CRYSTALLOGRAPHY REPORTS
  • 2002 Lateral Epitaxy of Gallium Arsenide by Chloride Vapor Transport in GROWTH OF CRYSTALS
  • 1999-01 Formation of a transition layer during heteroepitaxy of III–V compound semiconductors in gas-phase epitaxy systems in RUSSIAN PHYSICS JOURNAL
  • 1998-09 Structure and properties of epitaxial GaAs and InGaAs films grown by low-temperature molecular-beam epitaxy in RUSSIAN PHYSICS JOURNAL
  • 1998-08 Physics of complex semiconductor crystals and their structure in RUSSIAN PHYSICS JOURNAL
  • 1996-06 Initial stages in the growth and development of junctions in heteroepitaxy of InP on GaAs in RUSSIAN PHYSICS JOURNAL
  • 1995-02 Electrophysical properties of epitaxial gallium arsenide doped with acceptor impurities in RUSSIAN PHYSICS JOURNAL
  • 1992-05 Use of ab etchant for clarifying the structural-impurity inhomogeneties in epitaxial layers of GaAs in RUSSIAN PHYSICS JOURNAL
  • 1992-01 Role of the substrate in the formation of structure defects representing step retardation sites during vapor phase epitaxy of gallium arsenide in RUSSIAN PHYSICS JOURNAL
  • 1988-09 Influence of the AsH3 inlet pressure on the growth of epitaxial gallium arsenide layers in the GaCl-AsH3-H2 system. Range of orientation (115)A-(001)-(115)B in SOVIET PHYSICS JOURNAL
  • 1988-01 Growth and impurity-trapping kinetics in sulfur-doped gallium arsenide epitaxy in SOVIET PHYSICS JOURNAL
  • 1986-05 Formation of centers with deep levels in gaseous phase epitaxy of gallium arsenide in SOVIET PHYSICS JOURNAL
  • 1985-02 Complexing of tellurium-doped gallium arsenide in gas-phase epitaxy in SOVIET PHYSICS JOURNAL
  • 1985-02 Anisotropy of impurity trapping by epitaxial layers of gallium arsenide near singular faces with different chlorine and tellurium pressures in SOVIET PHYSICS JOURNAL
  • 1984-05 Dependence of the rate of growth of epitaxial layers of indium arsenide on the temperature of deposition in the system in As-AsC13-H2 in SOVIET PHYSICS JOURNAL
  • 1983-11 The growth rate of epitaxial InAs layers as a function of AsCl3 in the InAs-AsCl3-H2 system in SOVIET PHYSICS JOURNAL
  • 1983-10 Impurity trapping during gas-phase epitaxy on gallium arsenide in SOVIET PHYSICS JOURNAL
  • 1983-06 Kinetics of capture of tellurium by {111} gallium arsenide faces in the GaAs-AsCl3-H2 system at various supersaturations in SOVIET PHYSICS JOURNAL
  • 1983-06 Growth of GaAs epitaxial layers in the proximity of singular faces at various chlorine and impurity (tellurium) pressures in SOVIET PHYSICS JOURNAL
  • 1982-11 Effects of growth temperature and substrate orientation on the entry of tellurium into epitaxial gallium arsenide films in SOVIET PHYSICS JOURNAL
  • 1982-11 Effects of gas flow speed and chlorine concentration on tellurium uptake in gas-phase epitaxy of gallium arsenide in SOVIET PHYSICS JOURNAL
  • 1982-09 Influence of crystallization temperature on growth rate of epitaxial gallium arsenide layers in the system GaAs-AsCl3-H2 in SOVIET PHYSICS JOURNAL
  • 1982-09 Influence of crystallization temperature on the structure of growth surfaces of epitaxial gallium arsenide layers in the system GaAs-AsCl3-H2 in SOVIET PHYSICS JOURNAL
  • 1982-04 Anisotropy during vapor-phase epitaxy of indium arsenide in SOVIET PHYSICS JOURNAL
  • 1981-03 Influence of supersaturation on the growth of gallium arsenide films in chloride gas-transport systems in SOVIET PHYSICS JOURNAL
  • 1980-01 Kinetics and growth mechanism of gallium arsenide crystals in gas-phase epitaxy in SOVIET PHYSICS JOURNAL
  • 1979-09 Nondislocation etch pits in gallium arsenide obtained by vapor-phase epitaxy in SOVIET PHYSICS JOURNAL
  • 1979-06 Kinetics of formation of defects of the step stopping center (SSC) type in gas-phase epitaxy of gallium arsenide in SOVIET PHYSICS JOURNAL
  • 1979-02 Growth mechanism for thin autoepitaxial silicon layers grown in a low-temperature chloride process in SOVIET PHYSICS JOURNAL
  • 1979 Effects of Crystallization Conditions on Growth and Doping Anisotropy for Epitaxial Germanium in РОСТ КРИСТАЛЛОЬ / ROST KRISTALLOV / GROWTH OF CRYSTALS
  • 1978-10 Local impurity inhomogeneities in autoepitaxial layers of gallium arsenide in SOVIET PHYSICS JOURNAL
  • 1978-05 Growth of callium arsenide under various initial supersaturations in a Ga-AsCl3-H2 gas-transport system in SOVIET PHYSICS JOURNAL
  • 1977-12 Growth of gallium arsenide in a GaAs-AsCl3-H2 gas-transport system. 2. Growth mechanism in SOVIET PHYSICS JOURNAL
  • 1976-06 Growth of gallium arsenide under various initial supersaturation levels in a gaas-ASCL3-H2 gas-transport system in SOVIET PHYSICS JOURNAL
  • 1976-01 Effect of dopant type on the formation of the growth relief of gallium arsenide in a chloride gas-transport system in SOVIET PHYSICS JOURNAL
  • 1975-09 Micromorphology of auto-epitaxial layers of gallium arsenide in SOVIET PHYSICS JOURNAL
  • 1975-09 Micromorphology of auto-epitaxial layers of gallium arsenide in SOVIET PHYSICS JOURNAL
  • 1975 Morphology of Autoepitaxial Gallium Arsenide in the Crystallographic Range (111)A-( 100)-( 111 )B in РОСТ КРИСТАЛЛОВ/ROST KRISTALLOV/GROWTH OF CRYSTALS
  • 1974-02 Effects of zinc on the growth rate anisotropy of gallium arsenide in the GaAs-AsCl3-H2 system in SOVIET PHYSICS JOURNAL
  • 1974-01 Effect of the means of substrate processing on the growth kinetics of autoepitaxial layers of gallium arsenide and their properties in SOVIET PHYSICS JOURNAL
  • 1973-10 Micromorphology of autoepitaxial gallium arsenide: Effects of substrate orientation in SOVIET PHYSICS JOURNAL
  • 1973-06 Effects of crystallization temperature on the growth and doping of autoepitaxial gallium arsenide films in SOVIET PHYSICS JOURNAL
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