Олег Игоревич Kon'Kov

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Олег Игоревич



Publications in SciGraph latest 50 shown

  • 2021-04 High-Voltage 4H-SiC-Based Avalanche Diodes with a Negative Bevel in SEMICONDUCTORS
  • 2021-02-19 High-Voltage 4H-SiC Schottky Diodes with Field-Plate Edge Termination in SEMICONDUCTORS
  • 2020-07 The Effect of Texturing of Silicon Wafer Surfaces for Solar Photoelectric Transducers on Their Strength Properties in TECHNICAL PHYSICS
  • 2020-01 Micro-profiling of 4H-SiC by Dry Etching to Form a Schottky Barrier Diode in SEMICONDUCTORS
  • 2018-02 4H-SiC Based Subnanosecond (150 ps) High-Voltage (1600 V) Current Breakers in TECHNICAL PHYSICS LETTERS
  • 2015-11-04 Dynamic characteristics of 4H-SiC drift step recovery diodes in SEMICONDUCTORS
  • 2015-07-01 Resistance of 4H-SiC Schottky barriers at high forward-current densities in SEMICONDUCTORS
  • 2014-08-31 On the collection of photocarriers in high-resistance silicon amorphous-crystalline heterostructures in SEMICONDUCTORS
  • 2014-07-06 Modification of the structure and percolation of current in an array of single-walled carbon nanotubes in PHYSICS OF THE SOLID STATE
  • 2014-05 The photosensitivity of amorphous-crystalline silicon heterostructures with an inversion channel in TECHNICAL PHYSICS LETTERS
  • 2013-05-16 Microdetermination of titanium on the developed silicon surface using cells made of perfluorinated proton-conducting membranes in TECHNICAL PHYSICS
  • 2013-03 Specific features of nanosecond current-voltage characteristics of an array of carbon nanotubes in TECHNICAL PHYSICS LETTERS
  • 2012-11-06 Percolation, self-organized criticality, and electrical instability in carbon nanostructures in PHYSICS OF THE SOLID STATE
  • 2012-03-16 Carbon nanostructures as an example of the self-organized criticality in PHYSICS OF THE SOLID STATE
  • 2012-03-16 Leakage currents in 4H-SiC JBS diodes in SEMICONDUCTORS
  • 2011-10-07 I-V characteristics of high-voltage 4H-SiC diodes with a 1.1-eV Schottky barrier in SEMICONDUCTORS
  • 2011-05-15 High-voltage (3.3 kV) 4H-SiC JBS diodes in SEMICONDUCTORS
  • 2011-05 Portable power source based on air-hydrogen fuel cells with free-breathing cathodes in TECHNICAL PHYSICS LETTERS
  • 2011-03 Specific features of amorphous silicon layers grown by plasma-enhanced chemical vapor deposition with tetrafluorosilane in SEMICONDUCTORS
  • 2010-05-09 Excess leakage currents in high-voltage 4H-SiC Schottky diodes in SEMICONDUCTORS
  • 2009-09-15 Experimental 4H-SiC junction-barrier Schottky (JBS) diodes in SEMICONDUCTORS
  • 2008-02 High-voltage (900 V) 4 H-SiC Schottky diodes with a boron-implanted guard p-n junction in SEMICONDUCTORS
  • 2006-07 Lithium intercalation into amorphous-silicon thin films: An electrochemical-impedance study in RUSSIAN JOURNAL OF ELECTROCHEMISTRY
  • 2006-04-25 Lithium intercalation in thin amorphous-silicon films in RUSSIAN JOURNAL OF ELECTROCHEMISTRY
  • 2006-04-09 Lithium intercalation into amorphous silicon thin films in SEMICONDUCTORS
  • 2004-09 Photosensitive structures based on single-crystal silicon and phthalocyanine CuPc: Fabrication and properties in SEMICONDUCTORS
  • 2002-11 Conductivity and structure of Er-doped amorphous hydrogenated silicon films in SEMICONDUCTORS
  • 2002-11 Erbium electroluminescence in p-i-n amorphous hydrogenated silicon structures in SEMICONDUCTORS
  • 2002-11 The formation of β-FeSi2 precipitates in microcrystalline Si in SEMICONDUCTORS
  • 2002-08 Fabrication and properties of amorphous hydrogenated boron carbide films in SEMICONDUCTORS
  • 2002 Study of Er-related Defects in a-Si:H(Er) Films Used in Light Emitting Heterostructures in MRS ADVANCES
  • 2001-10 Effect of doping with nitrogen on electrical properties and erbium electroluminescence of a-Si:H(Er) films in SEMICONDUCTORS
  • 2000-12 The ablation threshold in amorphous diamondlike carbon films exposed to an ArF excimer laser radiation in TECHNICAL PHYSICS LETTERS
  • 2000-07 The influence of erbium on electrical and photoelectric properties of amorphous silicon produced by radio-frequency silane decomposition in SEMICONDUCTORS
  • 2000-05 Current-voltage characteristics of electroluminescent Me/(a-Si:H):Er/c-Si structures prepared by magnetron sputtering in SEMICONDUCTORS
  • 2000-04 Structure and properties of a-Si:H films grown by cyclic deposition in SEMICONDUCTORS
  • 2000-03 Microwave experiment on a costas-array reflecting screen in TECHNICAL PHYSICS LETTERS
  • 2000-02 Nonlinear absorption of a picosecond pulse in a-Si: H in PHYSICS OF THE SOLID STATE
  • 2000-01 The influence of local surroundings of Er atoms on the kinetics of decay of Er photoluminescence in amorphous hydrogenated silicon in SEMICONDUCTORS
  • 1999-10 Characteristics of microwave radiation from copper-containing fullerene resonators at liquid-nitrogen temperatures in TECHNICAL PHYSICS LETTERS
  • 1999-04 Copper-oxygen substructures in carbon allotropes (graphite and fullerites) in PHYSICS OF THE SOLID STATE
  • 1999-04 Gas-sensitive properties of copper-containing fullerene membranes in TECHNICAL PHYSICS LETTERS
  • 1999-02 Influence of the substrate temperature and annealing on the 1.54-µm erbium photoluminescence of a-Si:H films obtained using a glow discharge in SEMICONDUCTORS
  • 1998-08 Luminescence of erbium in amorphous hydrogenated silicon obtained by the glow-discharge method in SEMICONDUCTORS
  • 1998-03 Anomalies in the microwave conductivity of a polycrystalline C60 membrane in PHYSICS OF THE SOLID STATE
  • 1998-03 Crystalline structure of a C60/C70 membrane in PHYSICS OF THE SOLID STATE
  • 1997-09 Effect of oxygen on the electrophysical properties of some carbon allotropes (graphite and C60 fullerene) in PHYSICS OF THE SOLID STATE
  • 1997-05 Millimeter microwave study of the superconducting properties of the Cu-C system in PHYSICS OF THE SOLID STATE
  • 1997-02 Intense luminescence with a tunable wavelength from films of tetrahedral amorphous hydrogenated carbon on a fused quartz substrate in TECHNICAL PHYSICS LETTERS
  • 1997-01 Measurement of the amount of free and bound hydrogen in amorphous carbon in TECHNICAL PHYSICS LETTERS
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