Galia Pozina

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Publications in SciGraph latest 50 shown

  • 2020-12-17 Development of β-Ga2O3 layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor in SCIENTIFIC REPORTS
  • 2020-11-30 Control of the surface plasmon dispersion and Purcell effect at the metamaterial-dielectric interface in SCIENTIFIC REPORTS
  • 2020-02-14 Perovskite-molecule composite thin films for efficient and stable light-emitting diodes in NATURE COMMUNICATIONS
  • 2020-01 Strong Coupling of Excitons in Hexagonal GaN Microcavities in SEMICONDUCTORS
  • 2019-07-15 Enhancement of light emission in Bragg monolayer-thick quantum well structures in SCIENTIFIC REPORTS
  • 2019-07-03 Revising of the Purcell effect in periodic metal-dielectric structures: the role of absorption in SCIENTIFIC REPORTS
  • 2018-12-27 Experimental Study of Spontaneous Emission in the Bragg Multiple Quantum Wells Structure of InAs Monolayers Embedded in a GaAs Matrix in SEMICONDUCTORS
  • 2018-08-03 Förster Energy Transfer in Arrays of Epitaxial CdSe/ZnSe Quantum Dots Involving Bright and Dark Excitons in PHYSICS OF THE SOLID STATE
  • 2018-07-16 Design rules for minimizing voltage losses in high-efficiency organic solar cells in NATURE MATERIALS
  • 2018-06-07 Experimental Study of Spontaneous Emission in Bragg Multiple- Quantum-Well Structures with InAs Single-Layer Quantum Wells in SEMICONDUCTORS
  • 2018-05-08 Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy in SCIENTIFIC REPORTS
  • 2018-04-03 Purcell Effect in Tamm Plasmon Structures with QD Emitter in SEMICONDUCTORS
  • 2017-08-21 Enhancement of spontaneous emission in Tamm plasmon structures in SCIENTIFIC REPORTS
  • 2017-04-26 Near band gap luminescence in hybrid organic-inorganic structures based on sputtered GaN nanorods in SCIENTIFIC REPORTS
  • 2017-02-08 Emission properties of Ga2O3 nano-flakes: effect of excitation density in SCIENTIFIC REPORTS
  • 2016-11-15 AlGaN nanostructures with extremely high quantum yield at 300 K in PHYSICS OF THE SOLID STATE
  • 2016-11-08 AlGaN Nanostructures with Extremely High Room-Temperature Internal Quantum Efficiency of Emission Below 300 nm in JOURNAL OF ELECTRONIC MATERIALS
  • 2015-12-11 III-nitride tunable cup-cavities supporting quasi whispering gallery modes from ultraviolet to infrared in SCIENTIFIC REPORTS
  • 2015-10-12 Super-radiant mode in InAs—monolayer–based Bragg structures in SCIENTIFIC REPORTS
  • 2015-01-20 Dynamic properties of excitons in ZnO/AlGaN/GaN hybrid nanostructures in SCIENTIFIC REPORTS
  • 2014-06-25 Single and double bosonic stimulation of THz emission in polaritonic systems in SCIENTIFIC REPORTS
  • 2012-06-23 Effect of the Surface Morphology of Seed and Mask Layers on InP Grown on Si by Epitaxial Lateral Overgrowth in JOURNAL OF ELECTRONIC MATERIALS
  • 2002 Photoluminescence in n-doped In0.1Ga0.9N/In0.01Ga0.99N multiple quantum wells in MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
  • 2001 Characterization of Red Emission in Nominally Undoped Hydride Vapor Phase Epitaxy GaN in MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
  • 2001 Recombination Processes of GaNAs/GaAs structures: Effect of Rapid Thermal Annealing in PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS PART I
  • 2001 Photoluminescence of Excitons in n-Type In0.11Ga0.89N/In0.01Ga0.99N Multiple Quantum Wells in MRS ADVANCES
  • 1999 Radiative recombination in In0.15Ga0.85N/GaN multiple quantum well structures in MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
  • 1999 Mechanism for Radiative Recombination in In0.15Ga0.85N/GaN Multiple Quantum Well Structures in MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
  • 1998-05 Dynamics of localized excitons in a superlattice grown by molecular-beam epitaxy with submonolayers of CdSe in PHYSICS OF THE SOLID STATE
  • 1998 Mechanism for Radiative Recombination in In0.15Ga0.85N/GaN Multiple Quantum Well Structures in MRS ADVANCES
  • 1997 Mbe Growth And Characterization Of Er/O And Er/F Doped Si Light Emitting Structures in MRS ADVANCES
  • 1995-05 Shift in the position of the low-temperature luminescence line in spontaneously ordered solid solutions of InGaAs in JOURNAL OF APPLIED SPECTROSCOPY
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