Maksim V Yakushev

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Maksim V



Publications in SciGraph latest 50 shown

  • 2017-05-31 Temperature Dependences of the Product of the Differential Resistance by the Area in MIS-Structures Based on CdxHg1–xTe Grown by Molecularbeam Epitaxy on Alternative Si and GaAs Substrates in RUSSIAN PHYSICS JOURNAL
  • 2016-11-15 Methodological and instrumental problems in high-precision in situ ellipsometry diagnostics of the mercury cadmium telluride layer composition in molecular beam epitaxy in INSTRUMENTS AND EXPERIMENTAL TECHNIQUES
  • 2016-07-11 Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy in RUSSIAN PHYSICS JOURNAL
  • 2016-02-19 Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates in SEMICONDUCTORS
  • 2014-02-14 Photoluminescence of CdHgTe solid solutions subjected to low-energy ion treatment in SEMICONDUCTORS
  • 2013-10-17 High-temperature photoluminescence of CdHgTe solid solutions grown by molecular-beam epitaxy in TECHNICAL PHYSICS
  • 2013-01-13 The photoelectrical properties of MIS structures based on heteroepitaxial n-Hg1–xCdxTe (x = 0.21–0.23) in RUSSIAN PHYSICS JOURNAL
  • 2013-01-12 Analysis of the photoluminescence spectra of CdxHg1–xte heteroepitaxial structures with potential and quantum wells grown by molecularbeam epitaxy in RUSSIAN PHYSICS JOURNAL
  • 2012-10-10 Electrical and optical properties of CdHgTe films grown by molecular-beam epitaxy on silicon substrates in SEMICONDUCTORS
  • 2011-07-08 Defects in the crystal structure of CdxHg1 − xTe layers grown on the Si (310) substrates in SEMICONDUCTORS
  • 2011-07-08 Photoluminescence of Hg1 − xCdxTe based heterostructures grown by molecular-beam epitaxy in SEMICONDUCTORS
  • 2011-02 Infrared focal plane assemblies based on HgCdTe/Si(310) heterostructure in TECHNICAL PHYSICS LETTERS
  • 2010-12-29 Photoluminescence of CdHgTe epilayers grown on silicon substrates in TECHNICAL PHYSICS LETTERS
  • 2010-07-17 Electrophysical characteristics of MIS structures based on graded band-gap MBE HgCdTe with grown in situ CdTe as a dielectric in RUSSIAN PHYSICS JOURNAL
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