V M Ustinov


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Person Info

NAME

V M

SURNAME

Ustinov

Publications in SciGraph latest 50 shown

  • 2018-10 Effect of Epitaxial-Structure Design and Growth Parameters on the Characteristics of Metamorphic Lasers of the 1.46-μm Optical Range Based on Quantum Dots Grown on GaAs Substrates in SEMICONDUCTORS
  • 2018-01 Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells in SEMICONDUCTORS
  • 2017-12 Peaking of Optical Pulses in Vertical-Cavity Surface-Emitting Lasers with an Active Region Based on Submonolayer InGaAs Quantum Dots in TECHNICAL PHYSICS LETTERS
  • 2017-11 Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors in SEMICONDUCTORS
  • 2017-10 Precision calibration of the silicon doping level in gallium arsenide epitaxial layers in TECHNICAL PHYSICS LETTERS
  • 2016-10 Laser generation at 1.3 μm in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping in TECHNICAL PHYSICS LETTERS
  • 2016-10 effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis in SEMICONDUCTORS
  • 2016-10 Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture in SEMICONDUCTORS
  • 2016-10 A study of distributed dielectric bragg reflectors for vertically emitting lasers of the near-IR range in TECHNICAL PHYSICS LETTERS
  • 2016-09 Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs in SEMICONDUCTORS
  • 2016-03 Microdisk Injection Lasers for the 1.27-μm Spectral Range in SEMICONDUCTORS
  • 2016-02 Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation in SEMICONDUCTORS
  • 2015-01 Study of high-speed semiconductor VCSELs based on AlInGaAs heterostructures with large gain-cavity detuning in SEMICONDUCTORS
  • 2014-12 Precise calibration of thickness and composition of epitaxial AlGaAs heterostructures with vertical-cavity optical microresonators in TECHNICAL PHYSICS LETTERS
  • 2014-12 Effect of the photon lifetime on the characteristics of 850-nm vertical-cavity surface-emitting lasers with fully doped distributed Bragg reflectors and an oxide current aperture in SEMICONDUCTORS
  • 2014-01 Degradation-robust 850-nm vertical-cavity surface-emitting lasers for 25Gb/s optical data transmission in SEMICONDUCTORS
  • 2013-07 Single-spatial-mode semiconductor VCSELs with a nonplanar upper dielectric DBR in SEMICONDUCTORS
  • 2013-06 Influence of optical losses on the dynamic characteristics of linear arrays of near-infrared vertical-cavity surface-emitting lasers in SEMICONDUCTORS
  • 2012-11 Influence of the position of InGaAs quantum dot array on the spectral characteristics of AlGaAs/GaAs photovoltaic converters in TECHNICAL PHYSICS LETTERS
  • 2012-02 Decreasing parasitic capacitance in vertical-cavity surface-emitting laser with selectively oxidized aperture in TECHNICAL PHYSICS LETTERS
  • 2011-12 Submicron surface relief fabrication technology for epitaxial GaAs structures with thin AlGaAs stop layers in TECHNICAL PHYSICS LETTERS
  • 2011-07 Effect of AlGaAs-(AlGa)xOy pedestal parameters on characteristics of a microdisk laser with active region based on InAs/InGaAs quantum dots in SEMICONDUCTORS
  • 2011-06 Matrices of 960-nm vertical-cavity surface-emitting lasers in SEMICONDUCTORS
  • 2011-05 Dynamic properties of AlGaAs vertical cavity surface emitting lasers with active region based on submonolayer InAs insertions in SEMICONDUCTORS
  • 2010-12 Optical anisotropy of InAs quantum dots in TECHNICAL PHYSICS LETTERS
  • 2009-04 AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency fmax as high as 100 GHz in SEMICONDUCTORS
  • 2008-10 Effect of excitation level on the optical properties of GaAs/AlGaO microdisks with an active region containing InAs quantum dots in SEMICONDUCTORS
  • 2008-07 Electric-field control of the occupancy of the upper laser subband in quantum-well structures with asymmetric barriers designed for unipolar laser operation in SEMICONDUCTORS
  • 2008-02 Emission of terahertz radiation from GaAsN/GaAs heterostructures in an electric field in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2007-05 Injection lasers with a broad emission spectrum on the basis of self-assembled quantum dots in SEMICONDUCTORS
  • 2006-04 Optical studies of asymmetric-waveguide submonolayer InGaAs QD microdisks formed by selective oxidation in SEMICONDUCTORS
  • 2006-01 Photocurrent in self-organized InAs quantum dots in 1.3 μm InAs/InGaAs/GaAs semiconductor laser heterostructures in SEMICONDUCTORS
  • 2006-01 A3B5 nanowhiskers: MBE growth and properties in CZECHOSLOVAK JOURNAL OF PHYSICS
  • 2005-10 Nonequilibrium room-temperature carrier distribution in InAs quantum dots overgrown with thin AlAs/InAlAs layers in SEMICONDUCTORS
  • 2005-10 Spin-dependent recombination in GaAsN solid solutions in JETP LETTERS
  • 2005-05 Threshold behavior of the formation of nanometer islands in a Ge/Si(100) system in the presence of Sb in SEMICONDUCTORS
  • 2005-04 Design and fabrication technology for arrays for vertical-cavity surface-emitting lasers in SEMICONDUCTORS
  • 2005-01 Optical phenomena in InAs/GaAs heterostructures with doped quantum dots and artificial molecules in SEMICONDUCTORS
  • 2005-01 The engineering and properties of InAs quantum dot molecules in a GaAs matrix in SEMICONDUCTORS
  • 2005-01 Influence of antimony on the morphology and properties of an array of Ge/Si(100) quantum dots in PHYSICS OF THE SOLID STATE
  • 2004-11 Peculiarities in the morphology of ge island array on Si(100) at a subcritical thickness of the deposited Ge layer in TECHNICAL PHYSICS LETTERS
  • 2004-10 Suppression of dome-shaped clusters during molecular beam epitaxy of Ge on Si(100) in SEMICONDUCTORS
  • 2004-06 Electroluminescent studies of emission characteristics of InGaAsN/GaAs injection lasers in a wide temperature range in SEMICONDUCTORS
  • 2004-05 Low-threshold 1.3-µm injection lasers based on single InGaAsN quantum wells in SEMICONDUCTORS
  • 2004-05 Luminescence of stepped quantum wells in GaAs/GaAlAs and InGaAs/GaAs/GaAlAs structures in SEMICONDUCTORS
  • 2004-04 Peculiarities of electron spectrum rearrangement for the double-well heterostructure GaAs/AlGaAs with a variable dimensionality of electronic states in an external electric field in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2004-01 Si/Ge nanostructures for optoelectronics applications in PHYSICS OF THE SOLID STATE
  • 2004-01 Intraband absorption and emission of light in quantum wells and quantum dots in PHYSICS OF THE SOLID STATE
  • 2003-09 The effect of postgrowth annealing on the structure and optical properties of multilayer Ge/Si heterostructures in TECHNICAL PHYSICS LETTERS
  • 2003-09 Temperature variation of the morphology of nanocluster ensembles in the Ge/Si(100) system in TECHNICAL PHYSICS LETTERS
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