Anton V Tyazhev

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Anton V



Publications in SciGraph latest 50 shown

  • 2021-03-18 Effect of Gallium Arsenide Charge Carrier Life Time on the Generation and Detection Efficiency of Continuous and Pulsed Terahertz Radiation in RUSSIAN PHYSICS JOURNAL
  • 2018-03-13 Properties of Gallium Oxide Films Obtained by HF-Magnetron Sputtering in RUSSIAN PHYSICS JOURNAL
  • 2016-06-04 Effect of Heat Treatment on Electrical Properties and Charge Collection Efficiency of X-Ray Sensors Based on Chrome-Compensated Gallium Arsenide in RUSSIAN PHYSICS JOURNAL
  • 2015-08-09 Influence of Split-Ring Resonators on the Terahertz Transmission of a Planar Waveguide in RUSSIAN PHYSICS JOURNAL
  • 2014-01-12 The influence of anodic oxide on the electron concentration in n-GaAs in RUSSIAN PHYSICS JOURNAL
  • 2013-11-12 GaAs Pixel Detectors in MRS ADVANCES
  • 2013-08-07 Effect of annealing in argon on the properties of thermally deposited gallium-oxide films in SEMICONDUCTORS
  • 2013-05-09 Gallium-oxide films obtained by thermal evaporation in SEMICONDUCTORS
  • 2013-01-24 A Matrix Gallium-Arsenide Detector for Roentgenography in BIOMEDICAL ENGINEERING
  • 2013-01-12 Dipole antennas based on SI-GaAs:Cr for generation and detection of terahertz radiation in RUSSIAN PHYSICS JOURNAL
  • 2012-08-06 Electrical characteristics of n-GaAs-anode film-Ga2O3-metal structures in SEMICONDUCTORS
  • 2012-02-17 The effect of annealing on the properties of Ga2O3 anodic films in SEMICONDUCTORS
  • 2011-08-18 Ga2O3 films formed by electrochemical oxidation in SEMICONDUCTORS
  • 2011-07-16 Development of radiation medicine at DLNP, JINR in PHYSICS OF PARTICLES AND NUCLEI LETTERS
  • 2011-05-25 The effect of substrate material on the properties of tantalum oxide films in RUSSIAN PHYSICS JOURNAL
  • 2010-09-29 Effect of oxygen plasma on the properties of tantalum oxide films in SEMICONDUCTORS
  • 2010-06-08 Photoelectrical characteristics of as-grown highresistance GaAs single crystals in RUSSIAN PHYSICS JOURNAL
  • 2009-07-11 Solid-state image converters on the basis of the GaAs/ZnS structures in SEMICONDUCTORS
  • 2008-10 Gamma-ray detectors based on GaAs<Cr> for nanostructural investigations in RUSSIAN PHYSICS JOURNAL
  • 2007-09 Detection of short X-ray pulses excited by an atmospheric-pressure discharge of nanosecond duration in air in INSTRUMENTS AND EXPERIMENTAL TECHNIQUES
  • 2004-03 Chromium diffusion in gallium arsenide in SEMICONDUCTORS
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