S P Lebedev

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Publications in SciGraph latest 50 shown

  • 2018-12 Transition between Electron Localization and Antilocalization and Manifestation of the Berry Phase in Graphene on a SiC Surface in SEMICONDUCTORS
  • 2018-12 Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates in SEMICONDUCTORS
  • 2018-12 High Quality Graphene Grown by Sublimation on 4H-SiC (0001) in SEMICONDUCTORS
  • 2018-11 MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer in SEMICONDUCTORS
  • 2018-07 Electron-Diffraction Study of the Structure of Epitaxial Graphene Grown by the Method of Thermal Destruction of 6H- and 4H-SiC (0001) in Vacuum in PHYSICS OF THE SOLID STATE
  • 2018-07 Intercalation of Iron Atoms under Graphene Formed on Silicon Carbide in PHYSICS OF THE SOLID STATE
  • 2018-05 Local Anodic Oxidation of Graphene Layers on SiC in TECHNICAL PHYSICS LETTERS
  • 2018-03 Wide-Aperture Aspheric Optics for Formation of Subwavelength Caustics of a Terahertz Electromagnetic-Radiation Beam in OPTICS AND SPECTROSCOPY
  • 2017-10 Field effects in graphene in an interface contact with aqueous solutions of acetic acid and potassium hydroxide in PHYSICS OF THE SOLID STATE
  • 2017-09 Transport properties of graphene films grown by thermodestruction of SiC (0001) surface in argon medium in TECHNICAL PHYSICS LETTERS
  • 2017-08 Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001) in SEMICONDUCTORS
  • 2017-08 Effects of irradiation with 8-MeV protons on n-3C-SiC heteroepitaxial layers in SEMICONDUCTORS
  • 2016-12 Optical thermometry based on level anticrossing in silicon carbide in SCIENTIFIC REPORTS
  • 2016-12 Development of a spinodal decomposition model for the example of a heterostructure based on silicon carbide polytypes in TECHNICAL PHYSICS LETTERS
  • 2016-07 Electron-diffraction study of graphene-film growth stages during the thermal destruction of 6H-SiC (000) in vacuum in SEMICONDUCTORS
  • 2016-07 Transport properties of graphene in the region of its interface with water surface in PHYSICS OF THE SOLID STATE
  • 2016-03 Supersensitive graphene-based gas sensor in TECHNICAL PHYSICS
  • 2015-05 Measurements of the Transmission Coefficient of Samples of New Materials in the Sub-terahertz Band of Frequencies in MEASUREMENT TECHNIQUES
  • 2015-04 A method of studying spectral optical characteristics of a homogeneous medium by means of terahertz time-domain spectroscopy in OPTICS AND SPECTROSCOPY
  • 2014-07 Analysis of electric properties of ZrO2-Y2O3 single crystals using teraherz IR and impedance spectroscopy techniques in RUSSIAN JOURNAL OF ELECTROCHEMISTRY
  • 2014-03 On the self-structuring of single-crystal silicon wafers under inductive heating in vacuum in SEMICONDUCTORS
  • 2013-11 Investigation of the transition layer in 3C-SiC/6H-SiC heterostructures in SEMICONDUCTORS
  • 2013-09 Comparative study of 3C-SiC layers sublimation-grown on a 6H-SiC substrate in SEMICONDUCTORS
  • 2013-02 Structure and transport properties of nanocarbon films prepared by sublimation on a 6H-SiC surface in SEMICONDUCTORS
  • 2012-11 Designing and studying waveguide filters of terahertz and subterahertz frequency ranges in INSTRUMENTS AND EXPERIMENTAL TECHNIQUES
  • 2012-10 Annealing of radiation-compensated silicon carbide in TECHNICAL PHYSICS LETTERS
  • 2012-01 A terahertz radiation spectrum analyzer in INSTRUMENTS AND EXPERIMENTAL TECHNIQUES
  • 2011-07 Antiferromagnetic resonance and dielectric properties of rare-earth ferroborates in the submillimeter frequency range in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2011-05 Low-temperature transport properties of multigraphene films grown on the SiC surface by sublimation in SEMICONDUCTORS
  • 2010-10 Electrical characteristics of multigraphene films grown on high-resistivity silicon carbide substrates in SEMICONDUCTORS
  • 2010-06 Use of sublimation epitaxy for obtaining volume 3C-SiC crystals in TECHNICAL PHYSICS LETTERS
  • 2010-06 Studying edge luminescence of n-3C-SiC epilayers grown on 6H-SiC substrates in TECHNICAL PHYSICS LETTERS
  • 2010-04 Study of multigraphene films prepared by sublimation on the sic surface in PHYSICS OF THE SOLID STATE
  • 2009-06 Study of the 3C-SiC layers grown on the 15R-SiC substrates in SEMICONDUCTORS
  • 2009-05 A unified terahertz radiation source based on a backward-wave tube in INSTRUMENTS AND EXPERIMENTAL TECHNIQUES
  • 2009-04 Formation of nanocarbon films on the SiC surface through sublimation in vacuum in PHYSICS OF THE SOLID STATE
  • 2009-03 Metal-insulator transition in n-3C-SiC epitaxial films in SEMICONDUCTORS
  • 2009-01 Using atomic-step-structured 6H-SiC(0001) surfaces for the calibration of nanotranslations in scanning probe microscopy in TECHNICAL PHYSICS LETTERS
  • 2008-11 A terahertz spectrometer with a pulsed high magnetic field in INSTRUMENTS AND EXPERIMENTAL TECHNIQUES
  • 2008-09 Negative magnetoresistance in SiC heteropolytype junctions in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS
  • 2007-12 Galvanomagnetic properties of 3C-SiC epilayers grown on hexagonal SiC substrates in TECHNICAL PHYSICS LETTERS
  • 2007-06 Studying 3C-SiC epilayers grown on the (0001)C face of 6H-SiC substrates in TECHNICAL PHYSICS LETTERS
  • 2007-03 A study of thick 3C-SiC epitaxial layers grown on 6H-SiC substrates by sublimation epitaxy in vacuum in SEMICONDUCTORS
  • 1998-08 Magnetic and structural transitions in La1−xSrxMnO3: T-x phase diagram in JETP LETTERS
  • 1993-03 Measurement of electrodynamic parameters of superconducting films in the far-infrared and submillimeter frequency ranges in JOURNAL OF INFRARED, MILLIMETER, AND TERAHERTZ WAVES
  • 1982-01 Electrodynamic properties of plane wire grids in JOURNAL OF INFRARED, MILLIMETER, AND TERAHERTZ WAVES
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