А Ф Tsatsul’Nikov


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Person Info

NAME

А Ф

SURNAME

Tsatsul’Nikov

Publications in SciGraph latest 50 shown

  • 2018-07 The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas in TECHNICAL PHYSICS LETTERS
  • 2017-09 Photonic-crystal waveguide for the second-harmonic generation in PHYSICS OF THE SOLID STATE
  • 2015-09 Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN in PHYSICS OF THE SOLID STATE
  • 2013-09 Resonance Bragg structure with double InGaN quantum wells in PHYSICS OF THE SOLID STATE
  • 2012-02 Emission of terahertz radiation from selectively doped AlGaN/GaN heterostructures under the heating of two-dimensional electrons by an electric field in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2010-11 High-efficiency InGaN/GaN/AlGaN light-emitting diodes with short-period InGaN/GaN superlattice for 530–560 nm range in TECHNICAL PHYSICS LETTERS
  • 2010-10 Formation of composite InGaN/GaN/InAlN quantum dots in SEMICONDUCTORS
  • 2010-07 Structural and optical properties of InAlN/GaN distributed Bragg reflectors in SEMICONDUCTORS
  • 2010-06 Optical and structural properties of InGaN/GaN short-period superlattices for the active region of light- emitting diodes in SEMICONDUCTORS
  • 2009-08 Optical and X-ray diffraction studies of multilayer structures based on InGaN/GaN solid solutions in PHYSICS OF THE SOLID STATE
  • 2009-06 Phase separation and nonradiative carrier recombination in active regions of light-emitting devices based on InGaN quantum dots in a GaN or AlGaN matrix in SEMICONDUCTORS
  • 2009-01 Study of the formation of InGaN quantum dots on GaN surface in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2008-11 Vapor phase epitaxy of aluminum nitride from trimethylaluminum and molecular nitrogen in TECHNICAL PHYSICS LETTERS
  • 2008-11 InGaAlN heterostructures for LEDs grown on patterned sapphire substrates in TECHNICAL PHYSICS LETTERS
  • 2008-07 InGaN nanoinclusions in an AlGaN matrix in SEMICONDUCTORS
  • 2008-06 Energy characteristics of excitons in structures based on InGaN alloys in SEMICONDUCTORS
  • 2008-02 Photoluminescence of localized excitons in InGan quantum dots in SEMICONDUCTORS
  • 2008-02 Effect of hydrogen on anisotropy of the p-GaN growth rate in the case of side-wall MOCVD in SEMICONDUCTORS
  • 2007-05 Nonequilibrium population of charge carriers in structures with InGaN deep quantum dots in SEMICONDUCTORS
  • 2006-05 The study of lateral carrier transport in structures with InGaN quantum dots in the active region in SEMICONDUCTORS
  • 2005-11 Studies of the electron spectrum in structures with InGaN quantum dots using photocurrent spectroscopy in SEMICONDUCTORS
  • 2005-04 A study of carrier statistics in InGaN/Gan LED structures in SEMICONDUCTORS
  • 2005-02 Kinetics and inhomogeneous carrier injection in InGaN nanolayers in SEMICONDUCTORS
  • 2005-01 Special features of structural interaction in (AlGaIn)N/GaN heterostructures used as dislocation filters in SEMICONDUCTORS
  • 2004-11 MOCVD-grown AlGaN/GaN heterostructures with high electron mobility in SEMICONDUCTORS
  • 2004-07 Optical and structural properties of InAs quantum dot arrays grown in an InxGa1−xAs matrix on a GaAs substrate in SEMICONDUCTORS
  • 2004-06 Growth of AlGaN epitaxial layers and AlGaN/GaN superlattices by metal-organic chemical vapor deposition in SEMICONDUCTORS
  • 2004 MOCVD Growth of AlGaN Epilayers and AlGaN/GaN SLs in a Wide Composition Range in UV SOLID-STATE LIGHT EMITTERS AND DETECTORS
  • 2003-11 Optical properties of MBE-grown ultrathin GaAsN insertions in GaAs matrix in SEMICONDUCTORS
  • 2003-01 Long-term stability of long-wavelength (>1.25 µm) quantum-dot lasers fabricated on GaAs substrates in TECHNICAL PHYSICS
  • 2002-09 The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix in SEMICONDUCTORS
  • 2001-07 1.3 µm vertical microcavities with InAs/InGaAs quantum dots and devices based on them in SEMICONDUCTORS
  • 2001 Formation of GaAsN nanoinsertions in a GaN matrix in PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS PART I
  • 2000-05 Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 µm wavelength range in SEMICONDUCTORS
  • 2000-04 Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots in SEMICONDUCTORS
  • 2000-03 Mechanisms of InGaAlAs solid solution decomposition stimulated by InAs quantum dots in SEMICONDUCTORS
  • 1999-09 Heteroepitaxial growth of InAs on Si: A new type of quantum dot in SEMICONDUCTORS
  • 1999-08 Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands in SEMICONDUCTORS
  • 1999-08 Lasing at a wavelength close to 1.3 µm in InAs quantum-dot structures in SEMICONDUCTORS
  • 1999-07 Investigation of MOVPE-grown GaN layers doped with As atoms in SEMICONDUCTORS
  • 1999-06 Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures in TECHNICAL PHYSICS LETTERS
  • 1999-05 Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition in JOURNAL OF ELECTRONIC MATERIALS
  • 1999-02 Photo-and electroluminescence in the 1.3-µm wavelength range from quantum-dot structures grown on GaAs substrates in SEMICONDUCTORS
  • 1999-01 Influence of composition and anneal conditions on the optical properties of (In, Ga)As quantum dots in an (Al, Ga)As matrix in SEMICONDUCTORS
  • 1998-10 Capacitance-voltage profiling of Au/n-GaAs Schottky barrier structures containing a layer of self-organized InAs quantum dots in SEMICONDUCTORS
  • 1998-09 Effect of the quantum-dot surface density in the active region on injection-laser characteristics in SEMICONDUCTORS
  • 1998-07 Lasing in submonolayer InAs/AlGaAs structures without external optical confinement in TECHNICAL PHYSICS LETTERS
  • 1998-07 Investigation of the device characteristics of a low-threshold quantum-dot laser emitting at 1.9 µm in SEMICONDUCTORS
  • 1998-03 Injection lasers based on InGaAs quantum dots in an AlGaAs matrix in JOURNAL OF ELECTRONIC MATERIALS
  • 1998-01 Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm in TECHNICAL PHYSICS LETTERS
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