Dmitrii V Nechaev


Ontology type: schema:Person     


Person Info

NAME

Dmitrii V

SURNAME

Nechaev

Publications in SciGraph latest 50 shown

  • 2021-04 Two-Dimensional Excitons in Multiple GaN/AlN Monolayer Quantum Wells in JETP LETTERS
  • 2020-12-04 Structural and Dynamical Properties of Short-Period GaN/AlN Superlattices: Experiment and Theory in SEMICONDUCTORS
  • 2020-06 An Increase of Threading Dislocations Filtering Efficiency in Al2O3 Templates with Faceted Surface Morphology During a Growth by Molecular Beam Epitaxy in TECHNICAL PHYSICS LETTERS
  • 2020-04 Decreasing Density of Grown-in Dislocations in AlN/c-Sapphire Templates Grown by Plasma-Activated Molecular Beam Epitaxy in TECHNICAL PHYSICS LETTERS
  • 2019-11-06 Boson Peak Related to Ga Nanoclusters in AlGaN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy at Ga-Rich Conditions in SEMICONDUCTORS
  • 2018-12-24 Features of the Selective Growth of GaN Nanorods on Patterned c-Sapphire Substrates of Various Configurations in SEMICONDUCTORS
  • 2018-04-17 Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands in SEMICONDUCTORS
  • 2018-04-17 Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on μ-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE in SEMICONDUCTORS
  • 2017-05 Stress generation and relaxation in (Al,Ga)N/6H-SiC heterostructure grown by plasma-assisted molecular-beam epitaxy in TECHNICAL PHYSICS LETTERS
  • 2017-03 Monitoring of elastic stresses with optical system for measuring the substrate curvature in growth of III-N heterostructures by molecular-beam epitaxy in TECHNICAL PHYSICS LETTERS
  • 2016-11-15 AlGaN nanostructures with extremely high quantum yield at 300 K in PHYSICS OF THE SOLID STATE
  • 2016-11-08 AlGaN Nanostructures with Extremely High Room-Temperature Internal Quantum Efficiency of Emission Below 300 nm in JOURNAL OF ELECTRONIC MATERIALS
  • 2016-07-06 Specific features of the cathodoluminescence spectra of AlInGaN QWs, caused by the influence of phase separation and internal electric fields in SEMICONDUCTORS
  • 2016-06 Solar-blind AlxGa1–xN (x > 0.45) p–i–n photodiodes with a polarization-p-doped emitter in TECHNICAL PHYSICS LETTERS
  • 2016-04 X-ray diffractometry of AlN/c-sapphire templates obtained by plasma-activated molecular beam epitaxy in TECHNICAL PHYSICS LETTERS
  • 2015-08-13 Structural and optical properties of PA MBE AlGaN quantum well heterostructures grown on c-Al2O3 by using flux- and temperature-modulated techniques in JOURNAL OF MATERIALS RESEARCH
  • 2015-03-13 Defect engineering in AlGaN-based UV optoelectronic heterostructures grown on c-Al2O3 by plasma-assisted molecular beam epitaxy in MRS ADVANCES
  • 2013-10-11 Spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on AlGaN compounds grown by molecular beam epitaxy on c-sapphire substrates in PHYSICS OF THE SOLID STATE
  • 2012-05 RHEED monitoring of elastic stresses during MBE growth of group III nitride heterostructures in TECHNICAL PHYSICS LETTERS
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