AS Kyuregyan


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Person Info

NAME

AS

SURNAME

Kyuregyan

Publications in SciGraph latest 50 shown

  • 2018-03 Optimal Doping of Diode Current Interrupters in SEMICONDUCTORS
  • 2017-09 High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p–n junctions: I. Physics of the switching process in SEMICONDUCTORS
  • 2017-09 High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p–n junctions: II. Energy efficiency in SEMICONDUCTORS
  • 2017-02 A comparison of time-average power losses in insulated-gate bipolar transistors and hybrid SIT–MOS–transistors in RUSSIAN ELECTRICAL ENGINEERING
  • 2016-07 Effect of the anode-emitter injection efficiency on the characteristics of hybrid SIT–MOS transistors in SEMICONDUCTORS
  • 2016-03 On Measurements of the Electrons and Holes Impact-Ionization Coefficients in 4H–SiC in SEMICONDUCTORS
  • 2015-07 Avalanche mode of high-voltage overloaded p+–i–n+ diode switching to the conductive state by pulsed illumination in SEMICONDUCTORS
  • 2015-02 Comparative analysis of static characteristics of insulated gate bipolar transistors and thyristors with static induction in RUSSIAN ELECTRICAL ENGINEERING
  • 2014-12 Picosecond switching of high-voltage reverse-biased p+-n-n+ structures to the conductive state by pulsed light in SEMICONDUCTORS
  • 2013-07 Theory of steady-state plane tunneling-assisted impact ionization waves in SEMICONDUCTORS
  • 2012-05 Transverse instability of a plane front of fast impact ionization waves in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2011-12 The long-wave instability of the front of planar waves of impact ionization in semiconductors in THERMAL ENGINEERING
  • 2011-03 Edge inversion channels and surface leakage currents in high-voltage semiconductor devices in SEMICONDUCTORS
  • 2010-10 Numerical simulation of evolution of electron-hole avalanches and streamers in silicon in a uniform electric field in SEMICONDUCTORS
  • 2010-04 Exponentially self-similar impact ionization waves in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2009-11 Evolution of electron-hole avalanches and streamers in indirect gap semiconductors in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2008-01 The linear stage of evolution of electron-hole avalanches in semiconductors in SEMICONDUCTORS
  • 2007-11 Effect of diffusion on the velocity of stationary impact ionization waves in semiconductors in JETP LETTERS
  • 2007-07 Electron-hole avalanches in semiconductors in TECHNICAL PHYSICS LETTERS
  • 2007-06 Theory of stationary impact-ionization plane waves in semiconductors in SEMICONDUCTORS
  • 2005-12 Mechanism of p-n junction breakdown at high reverse voltage ramps in TECHNICAL PHYSICS LETTERS
  • 2005-07 Formation of the space charge region in diffusion p-n junctions under high-density current interruption in TECHNICAL PHYSICS
  • 2004-06 Theory of drift step-recovery diodes in TECHNICAL PHYSICS
  • 2003-09 On the fast recovery of the blocking property of silicon carbide diodes in SEMICONDUCTORS
  • 2002-02 Optimal doping of the drift region in unipolar diodes and transistors in SEMICONDUCTORS
  • 2000-07 Fringing field of high-voltage planar p-i-n diodes with a nonuniformly doped guard ring in SEMICONDUCTORS
  • 1998-06 Subthreshold characteristics of electrostatically controlled transistors and thyristors III. Buried gate in SEMICONDUCTORS
  • 1998-02 Subthreshold characteristics of electrostatically controlled transistors and thyristors. 1. Shallow planar gate in SEMICONDUCTORS
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