Vladimir Nikolaevich Nevedomskiy

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Vladimir Nikolaevich



Publications in SciGraph latest 50 shown

  • 2020-08-05 Interaction of Fluorocarbon with Silicon Monoxide and Processes of SiC Nanowire Formation in SEMICONDUCTORS
  • 2020-05-29 Urea–nitrate combustion synthesis of CuO/CeO2 nanocatalysts toward low-temperature oxidation of CO: the effect of Red/Ox ratio in JOURNAL OF MATERIALS SCIENCE
  • 2020-02 The Effect of Thermal Treatment on Properties of Composite Silicon–Carbon Anodes for Lithium-Ion Batteries in TECHNICAL PHYSICS LETTERS
  • 2019-07 High-Power Quantum-Cascade Lasers Emitting in the 8-μm Wavelength Range in TECHNICAL PHYSICS LETTERS
  • 2019-01 Sb-rich nanoinclusions in an AlGaAsSb metamaterial in MRS ADVANCES
  • 2018-09-06 Multilayer Quantum Well–Dot InGaAs Heterostructures in GaAs-based Photovoltaic Converters in SEMICONDUCTORS
  • 2017-05-18 InAs QDs in a metamorphic In0.25Ga0.75As matrix, grown by MOCVD in SEMICONDUCTORS
  • 2017-03-15 Magnetic properties of YFeO3 nanocrystals obtained by different soft-chemical methods in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS
  • 2017-02-10 Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates in SEMICONDUCTORS
  • 2016-05-15 Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range in SEMICONDUCTORS
  • 2015-12-10 Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures in SEMICONDUCTORS
  • 2015-11-04 Design concepts of monolithic metamorphic vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range in SEMICONDUCTORS
  • 2015-10-13 Metamorphic distributed Bragg reflectors for the 1440–1600 nm spectral range: Epitaxy, formation, and regrowth of mesa structures in SEMICONDUCTORS
  • 2015-10-13 Emission spectra of a laser based on an In(Ga)As/GaAs quantum-dot superlattice in SEMICONDUCTORS
  • 2014-11-06 Effect of local structural defects on the precipitation of as in the vicinity of InAs quantum dots in a GaAs matrix in SEMICONDUCTORS
  • 2014-08-06 Influence of GaAs spacer-layer thickness on quantum coupling and optical polarization in a ten-layer system of vertically correlated InAs/GaAs quantum dots in SEMICONDUCTORS
  • 2013-09-05 Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier in SEMICONDUCTORS
  • 2013-01-07 Optical anisotropy of InGaAs quantum dots in SEMICONDUCTORS
  • 2012-01-07 Polarization dependences of electroluminescence and absorption of vertically correlated InAs/GaAs QDs in SEMICONDUCTORS
  • 2009-04-28 Absorption in laser structures with coupled and uncoupled quantum dots in an electric field at room temperature in SEMICONDUCTORS
  • Affiliations

  • Ioffe Institute (current)
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