Pavel N Brunkov


Ontology type: schema:Person     


Person Info

NAME

Pavel N

SURNAME

Brunkov

Publications in SciGraph latest 50 shown

  • 2021-02-19 Molecular-Dynamics Study of Dimer Formation on a GaAs (001) Surface at Low Temperatures in SEMICONDUCTORS
  • 2020-12 Smoothing the Surface of Gallium Antimonide in TECHNICAL PHYSICS LETTERS
  • 2020-12 The Influence of Reactor Pressure on the Properties of GaN Layers Grown by MOVPE in TECHNICAL PHYSICS LETTERS
  • 2020-09-08 A Study of the Photoresponse in Graphene Produced by Chemical Vapor Deposition in SEMICONDUCTORS
  • 2020-07 Laser Formation of Colloidal Sulfur- and Carbon-Doped Silicon Nanoparticles in OPTICS AND SPECTROSCOPY
  • 2020-04-23 From graphene oxide towards aminated graphene: facile synthesis, its structure and electronic properties in SCIENTIFIC REPORTS
  • 2019-12 The Study of Nanoindentation of Atomically Flat GaAs Surface using the Tip of Atomic-Force Microscope in SEMICONDUCTORS
  • 2019-11-06 Boson Peak Related to Ga Nanoclusters in AlGaN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy at Ga-Rich Conditions in SEMICONDUCTORS
  • 2019-10-01 Molecular-Dynamics Simulation of the Low-Temperature Surface Reconstruction of a GaAs(001) Surface during the Nanoindentation Process in SEMICONDUCTORS
  • 2019-07 Insulating GaN Epilayers Co-Doped with Iron and Carbon in TECHNICAL PHYSICS LETTERS
  • 2018-12-24 Features of the Selective Growth of GaN Nanorods on Patterned c-Sapphire Substrates of Various Configurations in SEMICONDUCTORS
  • 2018-09-20 Facile reduction of graphene oxide suspensions and films using glass wafers in SCIENTIFIC REPORTS
  • 2018-07 The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas in TECHNICAL PHYSICS LETTERS
  • 2018-04-17 Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands in SEMICONDUCTORS
  • 2018-04-03 Density Control of InP/GaInP Quantum Dots Grown by Metal-Organic Vapor-Phase Epitaxy in SEMICONDUCTORS
  • 2018-02 Elastic and Piezoelectric Parameters of the Crystals of Histidine Phosphite L-Hist · H3РО3 Measured by the Method of Electromechanical Resonance in TECHNICAL PHYSICS LETTERS
  • 2018-01 Optimization of the Structural Properties and Surface Morphology of a Convex-Graded InxAl1–xAs (x = 0.05–0.83) Metamorphic Buffer Layer Grown via MBE on GaAs (001) in SEMICONDUCTORS
  • 2017-05 Stress generation and relaxation in (Al,Ga)N/6H-SiC heterostructure grown by plasma-assisted molecular-beam epitaxy in TECHNICAL PHYSICS LETTERS
  • 2017-01-06 Influence of light incident angle on reflectance spectra of metals processed by color laser marking technology in OPTICAL AND QUANTUM ELECTRONICS
  • 2016-10 A study of distributed dielectric bragg reflectors for vertically emitting lasers of the near-IR range in TECHNICAL PHYSICS LETTERS
  • 2016-07-06 Chloride epitaxy of β-Ga2O3 layers grown on c-sapphire substrates in SEMICONDUCTORS
  • 2016-05 Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source in TECHNICAL PHYSICS LETTERS
  • 2016-04 The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy in TECHNICAL PHYSICS LETTERS
  • 2016-03 Experimental study of cyclic action of plasma on tungsten in TECHNICAL PHYSICS
  • 2015-11 Cylindrical multilayer metal–dielectric structures in TECHNICAL PHYSICS LETTERS
  • 2015-08-02 Effect of the interaction conditions of the probe of an atomic-force microscope with the n-GaAs surface on the triboelectrization phenomenon in SEMICONDUCTORS
  • 2015-08-02 Determination of the technological growth parameters in the InAs-GaAs system for the MOCVD synthesis of “Multimodal” InAs QDs in SEMICONDUCTORS
  • 2015-04-16 Temperature dependences of the contact resistivity in ohmic contacts to n+-InN in SEMICONDUCTORS
  • 2015-03-13 Defect engineering in AlGaN-based UV optoelectronic heterostructures grown on c-Al2O3 by plasma-assisted molecular beam epitaxy in MRS ADVANCES
  • 2015-02-28 Formation of silver fractal structures in ion-exchange glasses under poling in TECHNICAL PHYSICS
  • 2015-02-05 Plasmon-induced enhancement of yellow-red luminescence in InGaN/Au nanocomposites in SEMICONDUCTORS
  • 2014-12-02 Multiperiod quantum-cascade nanoheterostructures: Epitaxy and diagnostics in SEMICONDUCTORS
  • 2014-10-28 Experimental Demonstration of Reduced Light Absorption by Intracavity Metallic Layers in Tamm Plasmon-based Microcavity in PLASMONICS
  • 2014-10-09 P-InAsSbP/n0-InAs/n+-InAs photodiodes for operation at moderate cooling (150–220 K) in SEMICONDUCTORS
  • 2014-08-31 Analysis of thermal emission processes of electrons from arrays of InAs quantum dots in the space charge region of GaAs matrix in SEMICONDUCTORS
  • 2014-03-07 Optimization of carrier mobility in luminescence layers based on europium β-diketonates in hybrid light-emitting structures in SEMICONDUCTORS
  • 2014-03-07 Study of the electrical properties of individual (Ga,Mn)As nanowires in SEMICONDUCTORS
  • 2014-01-05 Molecular beam epitaxy of AlGaAs/Zn(Mn)Se hybrid nanostructures with InAs/AlGaAs quantum dots near the heterovalent interface in SEMICONDUCTORS
  • 2014-01-05 Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers in SEMICONDUCTORS
  • 2013-11-07 Single-layer graphene oxide films on a silicon surface in TECHNICAL PHYSICS
  • 2013-10-12 Characterization of defects in colloidal CdSe nanocrystals by the modified thermostimulated luminescence technique in SEMICONDUCTORS
  • 2013-09-05 Local triboelectrification of an n-GaAs surface using the tip of an atomic-force microscope in SEMICONDUCTORS
  • 2013-07-06 Statistical analysis of AFM topographic images of self-assembled quantum dots in SEMICONDUCTORS
  • 2013-07-06 Mechanism of electronic-excitation transfer in organic light-emitting devices based on semiconductor quantum dots in SEMICONDUCTORS
  • 2013-06-16 Formation of silver nanoparticles on the silicate glass surface after ion exchange in PHYSICS OF THE SOLID STATE
  • 2013-03-14 Organic light-emitting diodes based on polyvinylcarbazole films doped with polymer nanoparticles in PHYSICS OF THE SOLID STATE
  • 2013-03-14 Integrated characterization of multilayer periodic systems with nanosized layers as applied to Mo/Si structures in PHYSICS OF THE SOLID STATE
  • 2013-03-08 Influence of the carrier Gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN in SEMICONDUCTORS
  • 2012-12-17 Self-assembled silver nanoislands formed on glass surface via out-diffusion for multiple usages in SERS applications in NANOSCALE RESEARCH LETTERS
  • 2012-10-10 Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region in SEMICONDUCTORS
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