Victor V Sherstnev


Ontology type: schema:Person     


Person Info

NAME

Victor V

SURNAME

Sherstnev

Publications in SciGraph latest 50 shown

  • 2016-07-06 Photovoltage and photocurrent in Pd–oxide–InP structures in a hydrogen medium in SEMICONDUCTORS
  • 2015-12-10 Photoelectric properties of photodiodes based on InAs/InAsSbP heterostructures with photosensitive-area diameters of 0.1–2.0 mm in SEMICONDUCTORS
  • 2015-08 Mode synchronization in a laser with coupled disk cavities in TECHNICAL PHYSICS LETTERS
  • 2015-07-01 Light emitting diode–photodiode optoelectronic pairs based on the InAs/InAsSb/InAsSbP heterostructure for the detection of carbon dioxide in SEMICONDUCTORS
  • 2015-03-04 Electrical properties of Pd-oxide-InP structures in SEMICONDUCTORS
  • 2014-12-02 High-power LEDs based on InGaAsP/InP heterostructures in SEMICONDUCTORS
  • 2014-10-09 Electroluminescence properties of a whispering-gallery-mode laser with coupled disk cavities in SEMICONDUCTORS
  • 2013-06-10 Temperature dependence of the threshold current in quantum-well WGM lasers (2.0–2.5 μm) in SEMICONDUCTORS
  • 2013-05-09 Improvement in the quantum sensitivity of InAs/InAsSb/InAsSbP heterostructure photodiodes in SEMICONDUCTORS
  • 2013-02 Increasing output power of LEDs (λ = 1.7–2.4 μm) by changing directions of reflected light fluxes in GaSb/GaInAsSb/GaAlAsSb heterostructures in TECHNICAL PHYSICS LETTERS
  • 2012-07 Characterization of quantum-confinement whispering-gallery-mode lasers operating above room temperature in TECHNICAL PHYSICS LETTERS
  • 2012-05 Photodiodes based on InAs/InAsSb/InAsSbP heterostructures with quantum efficiency increased by changing directions of reflected light fluxes in TECHNICAL PHYSICS LETTERS
  • 2012-04 Mid-infrared radiation sources based on coupled disk cavities in TECHNICAL PHYSICS LETTERS
  • 2012-02 Anisotropic polarization of radiation in quantum-confinement whispering-gallery-mode lasers in TECHNICAL PHYSICS LETTERS
  • 2011-11-12 Effect of diffusion and fluctuations in the nonequilibrium charge carrier density on the angular distribution of the output intensity for injection lasers based on an InAsSb/InAsSbP heterostructure in JOURNAL OF APPLIED SPECTROSCOPY
  • 2011-10-26 Room-temperature photodiodes based on InAs/InAs0.88Sb0.12/InAsSbP heterostructures for extended (1.5–4.8 μm) spectral range in TECHNICAL PHYSICS LETTERS
  • 2011-07-30 Nonlinear optical properties of solutions of heavy fullerenes in the near-ultraviolet region in RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY A
  • 2011-07-08 Fullerenes as passivating agents of the surfaces of semiconductor photo- and light-emitting diodes in RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY A
  • 2011-05-13 Heavy fullerenes for semiconducting photodiodes operating at 1.5–5.0 μm wavelengths in RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY A
  • 2011-04-16 Passivation of infrared photodiodes with alcoholic sulfide solution in SEMICONDUCTORS
  • 2011-03 Analysis of spatial modes in half-disk lasers based on AlGaAsSb/InGaAsSb quantum well nanoheterostructures in SEMICONDUCTORS
  • 2011-01-22 Technology of Cavity Fabrication for Whispering Gallery Modes Laser (m) in TERAHERTZ AND MID INFRARED RADIATION
  • 2011-01 Photodiodes based on InAs/InAs0.88Sb0.12/InAsSbP heterostructures for 2.5–4.9 μm spectral range in TECHNICAL PHYSICS LETTERS
  • 2010-07 Interference of emission from disk-shaped lasers based on quantum-confined AlGaAsSb/InGaAsSb nanoheterostructures in TECHNICAL PHYSICS LETTERS
  • 2010-04 Frequency tuning due to nonlinear effects in whispering gallery mode laser based on InAsSb/InAsSbP heterostructure in TECHNICAL PHYSICS LETTERS
  • 2009-12-24 Visual observation of frequency tuning in whispering gallery mode diode laser at room temperature in TECHNICAL PHYSICS LETTERS
  • 2009-12-24 Ray interference in tunable whispering gallery mode semiconductor laser in TECHNICAL PHYSICS LETTERS
  • 2009-09 Frequency-tuned semiconductor whispering-gallery-mode laser (λ = 2.35 µm) operating at room temperature in TECHNICAL PHYSICS LETTERS
  • 2009-08 A semiconductor whispering-gallery-mode laser with ring cavity operating at room temperature in TECHNICAL PHYSICS LETTERS
  • 2009-04-28 The temperature dependence of internal parameters of disc laser diodes InAs/InAsSbP in SEMICONDUCTORS
  • 2009-01-08 Continuous-wave disk WGM lasers (λ = 3.0 μm) based on InAs/InAsSbP heterostructures in SEMICONDUCTORS
  • 2008-11-28 Infrared whispering-gallery-mode lasers (λ= 2.4 μm) with convex disk cavity operating at room temperature in TECHNICAL PHYSICS LETTERS
  • 2008-11-28 Observation of whispering gallery modes in lasers with cut disk cavities in TECHNICAL PHYSICS LETTERS
  • 2008-11-28 Creating disk-shaped cavity with a vertical side surface for an infrared whispering-gallery-mode laser (λ ≈ 3 μm) in TECHNICAL PHYSICS LETTERS
  • 2008-04 Fabricating disk cavities for semiconductor lasers based on InAs(Sb)/InAsSbP heterostructures in TECHNICAL PHYSICS LETTERS
  • 2006 Mid-infrared Electroluminescence in LEDs Based on InAs and Related Alloys in MID-INFRARED SEMICONDUCTOR OPTOELECTRONICS
  • 2005-09 Semiconductor WGM lasers for the mid-IR spectral range in SEMICONDUCTORS
  • 2000-11 InAsSb/InAsSbP double-heterostructure lasers emitting at 3–4 µm: Part I in SEMICONDUCTORS
  • 2000-10 Diode laser spectroscopy using two modes of an InAsSb/InAsSbP laser near 3.6 μm in APPLIED PHYSICS B
  • 2000-09 Tunable InAsSb/InAsSbP laser with a low radiation divergence in the p-n-junction plane in SEMICONDUCTORS
  • 2000-02 Single-mode InAsSb/InAsSbP laser (λ≈3.2 μm) Tunable over 100 Å in SEMICONDUCTORS
  • 1999-12 Two-mode diode-laser spectroscopy with a InAsSb/InAsSbP laser near 3.6 µm in SEMICONDUCTORS
  • 1999-10 InAsSb/InAsSbP heterostructure lasers with a large range of current tuning of the lasing frequency in TECHNICAL PHYSICS LETTERS
  • 1999-09 Short-wavelength current tuning of InAsSb/InAsSbP heterostructure lasers caused by an injection nonuniformity in SEMICONDUCTORS
  • 1999-08 Spatial beam oscillations in stripe lasers utilizing InAsSb/InAsSbP heterojunctions in SEMICONDUCTORS
  • 1999-07 Electrical properties of epitaxial indium arsenide and narrow band solid solutions based on it in SEMICONDUCTORS
  • 1999-02 High-power light-emitting diodes operating in the 1.9 to 2.1-µm spectral range in SEMICONDUCTORS
  • 1999-02 Rapid tuning of the generation frequency of InAsSb/InAsSbP diode lasers (λ=3.3 µm) due to nonlinear optical effects in SEMICONDUCTORS
  • 1998-11 Scanning electron microscopy of long-wavelength laser structures in SEMICONDUCTORS
  • 1998-09 Spectral and mode characteristics of InAsSbP/InAsSb/InAsSbP lasers in the spectral region near 3.3 µm in SEMICONDUCTORS
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