Vitalii V Kozlovski


Ontology type: schema:Person     


Person Info

NAME

Vitalii V

SURNAME

Kozlovski

Publications in SciGraph latest 50 shown

  • 2021-03 Role of Low-Temperature Annealing in Modifying Silicon Carbide by Beams of Charged Particles in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2020-03 Influence of the Proton Irradiation Temperature on the Characteristics of High-Power High-Voltage Silicon Carbide Schottky Diodes in TECHNICAL PHYSICS LETTERS
  • 2020-01 Vacancy-Phosphorus Complexes in Electron-Irradiated Floating-Zone n-Type Silicon: New Points in Annealing Studies in SEMICONDUCTORS
  • 2019-12-04 Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs in SEMICONDUCTORS
  • 2019-11 Dependence of the Kinetics of Radiation-Induced Defect Formation on the Energy Absorbed by Si and SiC when Exposed to Fast Charged Particles in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2019-10-01 Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes in SEMICONDUCTORS
  • 2019-07-02 Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons in SEMICONDUCTORS
  • 2019-06 A Study of the Influence Exerted by Structural Defects on Photoluminescence Spectra in n-3C-SiC in TECHNICAL PHYSICS LETTERS
  • 2019-04 Effect of Electron Irradiation with an Energy of 0.9 MeV on the I–V Characteristics and Low-Frequency Noise in 4H–SiC pin Diodes in SEMICONDUCTORS
  • 2019-01 Role of the Carbon Sublattice in n-SiС Conductivity Compensation in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2018-12-24 Radiation-Induced Damage of Silicon-Carbide Diodes by High-Energy Particles in SEMICONDUCTORS
  • 2018-12-24 Interaction Rates of Group-III and Group-V Impurities with Intrinsic Point Defects in Irradiated Si and Ge in SEMICONDUCTORS
  • 2018-11-07 Galvanic and Capacitive Effects in n-SiC Conductivity Compensation by Radiation-Induced Defects in SEMICONDUCTORS
  • 2018-06-07 Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System in SEMICONDUCTORS
  • 2018-03-12 Formation of Radiation Defects by Proton Braking in Lightly Doped n- and p-SiC Layers in SEMICONDUCTORS
  • 2018-03 Radiation Resistance of Devices Based on SiC in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2017-12-08 Radiation-produced defects in germanium: Experimental data and models of defects in SEMICONDUCTORS
  • 2017-09 Radiation resistance of 4H-SiC Schottky diodes under irradiation with 0.9-MeV electrons in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2017-08-25 Effects of irradiation with 8-MeV protons on n-3C-SiC heteroepitaxial layers in SEMICONDUCTORS
  • 2017-05 Effect of irradiation with 15-MeV protons on the compensation of Ge〈Sb〉 conductivity in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2017-03-16 Effect of the energy of bombarding electrons on the conductivity of n-4H-SiC (CVD) epitaxial layers in SEMICONDUCTORS
  • 2016-07 Effect of recoil atoms on radiation-defect formation in semiconductors under 1–10-MeV proton irradiation in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2015-12 On the relationship between radiation-stimulated photoluminescence and nitrogen atoms in p-4H-SiC in TECHNICAL PHYSICS LETTERS
  • 2015-10-13 Radiation hardness of n-GaN schottky diodes in SEMICONDUCTORS
  • 2015-09-03 Effect of irradiation with MeV protons and electrons on the conductivity compensation and photoluminescence of moderately doped p-4H-SiC (CVD) in SEMICONDUCTORS
  • 2015-07 On the mechanism of the narrowing and broadening of Kikuchi lines during long-range action in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2015-03 Role of the recoil atom energy in the formation of radiation-induced defects in semiconductors under electron bombardment in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2014-10-09 Comparison of the radiation hardness of silicon and silicon carbide in SEMICONDUCTORS
  • 2014-10-09 Effect of hydrostatic pressure during the annealing of silicon-on-insulator films implanted with a high hydrogen-ion dose in SEMICONDUCTORS
  • 2014-09 Nonlinear effects in semiconductor-conductivity compensation by radiation defects in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2014-08-31 Irradiation of sublimation-grown p-SiC with 0.9-MeV electrons in TECHNICAL PHYSICS LETTERS
  • 2014-08-06 Conductivity compensation in n-4H-SiC (CVD) under irradiation with 0.9-MeV electrons in SEMICONDUCTORS
  • 2012-10 Annealing of radiation-compensated silicon carbide in TECHNICAL PHYSICS LETTERS
  • 2012-04-18 Similarities and distinctions of defect production by fast electron and proton irradiation: Moderately doped silicon and silicon carbide of n-type in SEMICONDUCTORS
  • 2011-09-17 Conductivity compensation in p-6H-SiC in irradiation with 8-MeV protons in SEMICONDUCTORS
  • 2011-02-20 Energy distribution of recoil atoms and formation of radiation defects in silicon carbide films under proton irradiation in SEMICONDUCTORS
  • 2009-07-11 Simulation of interaction between nickel and silicon carbide during the formation of ohmic contacts in SEMICONDUCTORS
  • 2008-03 Simulation of near-surface proton-stimulated diffusion of boron in silicon in SEMICONDUCTORS
  • 2004-10 Formation and study of buried SiC layers with a high content of radiation defects in SEMICONDUCTORS
  • 2002-11 Radiation hardness of wide-gap semiconductors (using the example of silicon carbide) in SEMICONDUCTORS
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