N A Pikhtin


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Person Info

NAME

N A

SURNAME

Pikhtin

Publications in SciGraph latest 50 shown

  • 2018-12 All-Electric Laser Beam Control Based on a Quantum-Confined Heterostructure with an Integrated Distributed Bragg Grating in SEMICONDUCTORS
  • 2018-11 High Temperature Laser Generation of Quantum-Cascade Lasers in the Spectral Region of 8 μm in PHYSICS OF THE SOLID STATE
  • 2018-11 Turn-on Dynamics of Quantum Cascade Lasers with a Wavelength of 8100 nm at Room Temperature in TECHNICAL PHYSICS
  • 2018-09 Dual-Frequency Generation in Quantum Cascade Lasers of the 8-μm Spectral Range in OPTICS AND SPECTROSCOPY
  • 2018-08 Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy in SEMICONDUCTORS
  • 2018-06 Numerical Simulation of the Current Dependence of Emission Spectra of High-Power Pulsed Lasers Based on Separate-Confinement Double Heterostructures in TECHNICAL PHYSICS LETTERS
  • 2018-02 Oxygen Nitrogen Mixture Effect on Aluminum Nitride Synthesis by Reactive Ion Plasma Deposition in SEMICONDUCTORS
  • 2017-07 Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers in SEMICONDUCTORS
  • 2017-06 A laser unit for photodynamic therapy and robot-assisted microsurgery in dentistry in TECHNICAL PHYSICS LETTERS
  • 2017-01 All-optical modulator cells based on AlGaAs/GaAs/InGaAs 905-nm laser heterostructures in TECHNICAL PHYSICS LETTERS
  • 2016-10 Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K) in SEMICONDUCTORS
  • 2016-10 Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 μm in SEMICONDUCTORS
  • 2016-09 On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions in SEMICONDUCTORS
  • 2016-06 Narrowing of the emission spectra of high-power laser diodes with a volume Bragg grating recorded in photo-thermo-refractive glass in SEMICONDUCTORS
  • 2016-05 Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers in SEMICONDUCTORS
  • 2015-11 Comparative analysis of the effects of electron and hole capture on the power characteristics of a semiconductor quantum-well laser in SEMICONDUCTORS
  • 2015-11 Lasing of multiperiod quantum-cascade lasers in the spectral range of (5.6–5.8)-μm under current pumping in SEMICONDUCTORS
  • 2015-10 Properties of AlN films deposited by reactive ion-plasma sputtering in SEMICONDUCTORS
  • 2015-08 Optical-cell model based on the lasing competition of mode structures with different Q-factors in high-power semiconductor lasers in SEMICONDUCTORS
  • 2015-03 Suppressing the process of charge carrier delocalization in high-power pulse-pumped semiconductor lasers in TECHNICAL PHYSICS LETTERS
  • 2014-10 On the temperature delocalization of carriers in GaAs/AlGaAs/InGaAs quantum-well heterostructures in SEMICONDUCTORS
  • 2014-05 Analysis of the emission efficiency of powerful semiconductor lasers under closed-mode threshold lasing conditions in SEMICONDUCTORS
  • 2014-05 On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range in SEMICONDUCTORS
  • 2014-05 Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures in SEMICONDUCTORS
  • 2014-03 Laser-diode bars based on AlGaAsP/GaAs heterostructures emitting at a wavelength of 850 nm in SEMICONDUCTORS
  • 2013-08 AlGaAs/GaAs diode lasers (1020–1100 nm) with an asymmetric broadened single transverse mode waveguide in SEMICONDUCTORS
  • 2013-04 Semiconductor InGaAs/GaAs injection lasers with waveguides based on a single quantum well in TECHNICAL PHYSICS LETTERS
  • 2013-01 Semiconductor lasers with internal wavelength selection in SEMICONDUCTORS
  • 2012-10 850-nm diode lasers based on AlGaAsP/GaAs heterostructures in SEMICONDUCTORS
  • 2012-09 Temperature dependence of the threshold current density in semiconductor lasers (λ = 1050–1070 nm) in SEMICONDUCTORS
  • 2012-09 Thermal delocalization of carriers in semiconductor lasers (λ = 1010–1070 nm) in SEMICONDUCTORS
  • 2012-02 High-order diffraction gratings for high-power semiconductor lasers in SEMICONDUCTORS
  • 2012-01 Diagnostics of semiconductor structures by means of an apertureless near-field terahertz microscope in RADIOPHYSICS AND QUANTUM ELECTRONICS
  • 2011-10 Diode lasers emitting at 1220 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate in SEMICONDUCTORS
  • 2011-10 Analysis of quenching conditions of Fabry-Perot mode lasing in semiconductor stripe-contact lasers in SEMICONDUCTORS
  • 2011-09 Diode lasers emitting at 1190 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate in SEMICONDUCTORS
  • 2011-05 Analysis of threshold conditions for generation of a closed mode in a Fabry-Perot semiconductor laser in SEMICONDUCTORS
  • 2011-05 Electroluminescence and absorption spectra of low-optical-loss semiconductor lasers based on InGaAs/AlGaAs/GaAs QW heterostructures in SEMICONDUCTORS
  • 2011-04 Laser diodes with several emitting regions (λ = 800–1100 nm) on the basis of epitaxially integrated heterostructures in SEMICONDUCTORS
  • 2010-12 InGaAs/GaAs/AlGaAs lasers emitting at a wavelength of 1190 nm grown by MOCVD epitaxy on GaAs substrate in SEMICONDUCTORS
  • 2010-11 Features of mode locking in laser with quantum well in broad waveguide layer in TECHNICAL PHYSICS LETTERS
  • 2010-10 Temperature dependence of the threshold current density and external differential quantum efficiency of semiconductor lasers (λ = 900–920 nm) in SEMICONDUCTORS
  • 2010-10 The temperature dependence of internal optical losses in semiconductor lasers (λ = 900–920 nm) in SEMICONDUCTORS
  • 2010-07 Actuators based on composite material with shape-memory effect in JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS
  • 2010-06 Two-band lasing in epitaxially stacked tunnel-junction semiconductor lasers in SEMICONDUCTORS
  • 2010-06 Pulsed semiconductor lasers with higher optical strength of cavity output mirrors in SEMICONDUCTORS
  • 2010-05 Temperature delocalization of charge carriers in semiconductor lasers in SEMICONDUCTORS
  • 2010-04 Giant reversible deformations in a shape-memory composite material in TECHNICAL PHYSICS LETTERS
  • 2010-02 Effect of the active region thickness on characteristics of semiconductor lasers based on asymmetric AlGaAs/GaAs/InGaAs heterostructures with broadened waveguide in SEMICONDUCTORS
  • 2010-02 A study of epitaxially stacked tunnel-junction semiconductor lasers grown by MOCVD in SEMICONDUCTORS
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