B R Semyagin

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Publications in SciGraph latest 50 shown

  • 2018-11 Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates in SEMICONDUCTORS
  • 2018-07 Zinc Diffusion into InP via a Narrow Gap from a Planar Zn3P2-Based Source in TECHNICAL PHYSICS LETTERS
  • 2018-04 Resonant Optical Reflection from AsSb–AlGaAs Metamaterials and Structures in SEMICONDUCTORS
  • 2018-03 Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers in OPTOELECTRONICS, INSTRUMENTATION AND DATA PROCESSING
  • 2016-11 Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence in SEMICONDUCTORS
  • 2014-11 Effect of local structural defects on the precipitation of as in the vicinity of InAs quantum dots in a GaAs matrix in SEMICONDUCTORS
  • 2014-07 InGaAs/GaAs Quantum Wells Grown by MBE on Artificial GaAs/Si(001) Substrates in RUSSIAN PHYSICS JOURNAL
  • 2014-05 Heteroepitaxy of AIIIBV films on vicinal Si(001) substrates in OPTOELECTRONICS, INSTRUMENTATION AND DATA PROCESSING
  • 2013-03 Dependence of plastic relaxation in GaAs films on nucleation of the first as monolayer on Si(001) substrates in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2012-10 Optical properties of GaAs structures containing a periodic system of layers of AsSb metal nanoinclusions in SEMICONDUCTORS
  • 2011-10 Formation of type-II InAs/GaSb strained short-period superlattices for IR photodetectors by molecular beam epitaxy in OPTOELECTRONICS, INSTRUMENTATION AND DATA PROCESSING
  • 2011-07 Yb3+:KY(WO4)2 laser with a fast saturable absorber in LASER PHYSICS
  • 2011-02 Molecular-beam epitaxy of GaAs/Si(001) structures for high-performance tandem AIIIBV/Si-solar energy converters on an active silicon substrate in RUSSIAN PHYSICS JOURNAL
  • 2009-12 GaAs structures with InAs and As quantum dots produced in a single molecular beam epitaxy process in SEMICONDUCTORS
  • 2009-02 As cluster array formation in GaAs grown by molecular-beam epitaxy at a low temperature and δ-doped with phosphorus in SEMICONDUCTORS
  • 2008-09 Influence of the structural surface state on the formation of a relief and morphology of GaAs(001) layers during molecular-beam epitaxy and vacuum annealing in RUSSIAN PHYSICS JOURNAL
  • 2005-01 A study of recombination centers related to As-Sb nanoclusters in low-temperature grown gallium arsenide in SEMICONDUCTORS
  • 2004-04 Capacitance study of electron traps in low-temperature-grown GaAs in SEMICONDUCTORS
  • 2004-01 Defect formation in LT MBE InGaAs and GaAs in JOURNAL OF STRUCTURAL CHEMISTRY
  • 2002-08 Structure of heterointerfaces and photoluminescence properties of GaAs/AlAs superlattices grown on (311)A and (311)B surfaces: Comparative analysis in SEMICONDUCTORS
  • 2000-06 Phonon-plasmon interaction in tunneling GaAs/AlAs superlattices in JETP LETTERS
  • 2000-01 Transverse optical phonon splitting in GaAs/AlAs superlattices grown on the GaAs(311) surface studied by the method of Raman light scattering in SEMICONDUCTORS
  • 1999-08 Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy in SEMICONDUCTORS
  • 1998-11 Raman and infrared spectroscopical investigation of the optical vibrational modes in GaSb/AlSb superlattices in THE EUROPEAN PHYSICAL JOURNAL B
  • 1998-10 Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy in SEMICONDUCTORS
  • 1998-09 Structure and properties of epitaxial GaAs and InGaAs films grown by low-temperature molecular-beam epitaxy in RUSSIAN PHYSICS JOURNAL
  • 1998-04 Optical phonons in quantum-wire structures [JETP Lett. 67, No. 2, 120–134 (25 January 1998)] in JETP LETTERS
  • 1998-01 Optical phonons in quantum-wire structures in JETP LETTERS
  • 1997-12 A suite of experimental conditions for photoluminescence monitoring of a heterojunction bipolar transistor structure in TECHNICAL PHYSICS
  • 1996-06 Observation of LO-phonon localization in GaAs quantum wires on faceted (311)A surfaces in JETP LETTERS
  • 1992 δ-Structures in Gallium Arsenide in GROWTH OF CRYSTALS
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