B R Semyagin

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Publications in SciGraph latest 50 shown

  • 2018-12 Diffusion Blurring of GaAs Quantum Wells Grown at Low Temperature in SEMICONDUCTORS
  • 2018-11 Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates in SEMICONDUCTORS
  • 2018-07 Zinc Diffusion into InP via a Narrow Gap from a Planar Zn3P2-Based Source in TECHNICAL PHYSICS LETTERS
  • 2018-04 Resonant Optical Reflection from AsSb–AlGaAs Metamaterials and Structures in SEMICONDUCTORS
  • 2018-03 Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers in OPTOELECTRONICS, INSTRUMENTATION AND DATA PROCESSING
  • 2017-12 Magnetoabsorption of Dirac Fermions in InAs/GaSb/InAs “Three-Layer” Gapless Quantum Wells in JETP LETTERS
  • 2017-04 Interlayer current near the edge of an InAs/GaSb double quantum well in proximity with a superconductor in JETP LETTERS
  • 2017-01 Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells in SEMICONDUCTORS
  • 2016-12 Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs in SEMICONDUCTORS
  • 2016-11 Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence in SEMICONDUCTORS
  • 2016-07 Specular Andreev reflection at the edge of an InAs/GaSb double quantum well with band inversion in JETP LETTERS
  • 2016-01 Formation and crystal structure of GaSb/GaP quantum dots in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2015-12 Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures in SEMICONDUCTORS
  • 2015-12 Plasmon resonance in new AsSb–AlGaAs metal–semiconductor metamaterials in SEMICONDUCTORS
  • 2015-02 Molecular beam epitaxy of III-PxAs1 − x solid solutions: Mechanism of composition formation in the sublattice of a group V element in SEMICONDUCTORS
  • 2014-11 Effect of local structural defects on the precipitation of as in the vicinity of InAs quantum dots in a GaAs matrix in SEMICONDUCTORS
  • 2014-10 Fröhlich resonance in the AsSb/AlGaAs system in PHYSICS OF THE SOLID STATE
  • 2014-07 InGaAs/GaAs Quantum Wells Grown by MBE on Artificial GaAs/Si(001) Substrates in RUSSIAN PHYSICS JOURNAL
  • 2014-05 Heteroepitaxy of AIIIBV films on vicinal Si(001) substrates in OPTOELECTRONICS, INSTRUMENTATION AND DATA PROCESSING
  • 2013-09 Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier in SEMICONDUCTORS
  • 2013-08 Optical reflection from the Bragg lattice of AsSb metal nanoinclusions in an AlGaAs matrix in SEMICONDUCTORS
  • 2013-06 Surface morphology and crystallographic properties of GaAs films grown by the MBE process on vicinal Si(001) substrates in RUSSIAN PHYSICS JOURNAL
  • 2013-03 Dependence of plastic relaxation in GaAs films on nucleation of the first as monolayer on Si(001) substrates in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2012-12 New system of self-assembled GaSb/GaP quantum dots in SEMICONDUCTORS
  • 2012-10 Optical properties of GaAs structures containing a periodic system of layers of AsSb metal nanoinclusions in SEMICONDUCTORS
  • 2011-12 Electron microscopy of GaAs Structures with InAs and as quantum dots in SEMICONDUCTORS
  • 2011-10 Formation of type-II InAs/GaSb strained short-period superlattices for IR photodetectors by molecular beam epitaxy in OPTOELECTRONICS, INSTRUMENTATION AND DATA PROCESSING
  • 2011-07 Yb3+:KY(WO4)2 laser with a fast saturable absorber in LASER PHYSICS
  • 2011-02 Molecular-beam epitaxy of GaAs/Si(001) structures for high-performance tandem AIIIBV/Si-solar energy converters on an active silicon substrate in RUSSIAN PHYSICS JOURNAL
  • 2009-12 GaAs structures with InAs and As quantum dots produced in a single molecular beam epitaxy process in SEMICONDUCTORS
  • 2009-10 Formation of dislocation defects in the process of burying of InAs quantum dots into GaAs in SEMICONDUCTORS
  • 2009-08 High-resolution X-ray diffraction studies of the GaAs structures grown at a low temperature and periodically δ-doped with antimony and phosphorus in SEMICONDUCTORS
  • 2009-02 As cluster array formation in GaAs grown by molecular-beam epitaxy at a low temperature and δ-doped with phosphorus in SEMICONDUCTORS
  • 2008-09 Influence of the structural surface state on the formation of a relief and morphology of GaAs(001) layers during molecular-beam epitaxy and vacuum annealing in RUSSIAN PHYSICS JOURNAL
  • 2006-07 Effect of isovalent doping with phosphorus on the cluster formation in gallium arsenide grown by molecular-beam epitaxy at a relatively low temperature in SEMICONDUCTORS
  • 2005-09 Electron traps in thin layers of low-temperature-grown gallium arsenide with As-Sb nanoclusters in SEMICONDUCTORS
  • 2005-02 Dichroism in transmission of light by an array of self-assembled GaAs quantum wires on a nanofaceted A(311) surface in PHYSICS OF THE SOLID STATE
  • 2005-01 A study of recombination centers related to As-Sb nanoclusters in low-temperature grown gallium arsenide in SEMICONDUCTORS
  • 2004-04 Capacitance study of electron traps in low-temperature-grown GaAs in SEMICONDUCTORS
  • 2004-01 Defect formation in LT MBE InGaAs and GaAs in JOURNAL OF STRUCTURAL CHEMISTRY
  • 2004-01 Excess arsenic and point defects in GaAS grown by molecular beam epitaxy at low temperatures in JOURNAL OF STRUCTURAL CHEMISTRY
  • 2003-09 Effect of growth conditions on incorporation of Si into Ga and As sublattices of GaAs during molecular-beam epitaxy in SEMICONDUCTORS
  • 2002-09 Doping of GaAs layers with Si under conditions of low-temperature molecular beam epitaxy in SEMICONDUCTORS
  • 2002-08 Measurements of parameters of the low-temperature molecular-beam epitaxy of GaAs in SEMICONDUCTORS
  • 2002-08 Structure of heterointerfaces and photoluminescence properties of GaAs/AlAs superlattices grown on (311)A and (311)B surfaces: Comparative analysis in SEMICONDUCTORS
  • 2002-04 Influence of the Substrate Orientation on the Silicon Capture into A- and B- Sublattices of Gallium Arsenide in Molecular Beam Epitaxy in RUSSIAN PHYSICS JOURNAL
  • 2000-10 The Effect of Flow Ratio between Elements of Groups III and V on the Structure and Properties of InGaAs Layers Grown by Low-Temperature Molecular-Beam Epitaxy in RUSSIAN PHYSICS JOURNAL
  • 2000-09 Accumulation of majority charge carriers in GaAs layers containing arsenic nanoclusters in SEMICONDUCTORS
  • 2000-06 Phonon-plasmon interaction in tunneling GaAs/AlAs superlattices in JETP LETTERS
  • 2000-01 Transverse optical phonon splitting in GaAs/AlAs superlattices grown on the GaAs(311) surface studied by the method of Raman light scattering in SEMICONDUCTORS
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