S S Mikhrin


Ontology type: schema:Person     


Person Info

NAME

S S

SURNAME

Mikhrin

Publications in SciGraph latest 50 shown

  • 2008-12 High-gain injection quantum-dot lasers operating at wavelengths above 1300 nm in TECHNICAL PHYSICS LETTERS
  • 2007-10 The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots in SEMICONDUCTORS
  • 2007-09 Submonolayer Quantum Dots for High Speed Surface Emitting Lasers in NANOSCALE RESEARCH LETTERS
  • 2005-04 Effect of p-doping of the active region on the temperature stability of InAs/GaAs QD lasers in SEMICONDUCTORS
  • 2004-06 High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates in SEMICONDUCTORS
  • 2004-01 High-power single-mode 1.3-μm lasers based on InAs/AlGaAs/GaAs quantum dot heterostructures in TECHNICAL PHYSICS LETTERS
  • 2003-12 Lasing at 1.5 µm in quantum dot structures on GaAs substrates in SEMICONDUCTORS
  • 2003-10 Temperature characteristics of low-threshold high-efficiency quantum-dot lasers with the emission wavelength from 1.25 to 1.29 µm in SEMICONDUCTORS
  • 2003-10 Design and technology of vertical-cavity surface-emitting lasers with nonconducting epitaxial mirrors in SEMICONDUCTORS
  • 2003-09 Metamorphic lasers for 1.3-µm spectral range grown on GaAs substrates by MBE in SEMICONDUCTORS
  • 2003-05 Structural and optical properties of InAs quantum dots in AlGaAs matrix in SEMICONDUCTORS
  • 2003-01 Long-term stability of long-wavelength (>1.25 µm) quantum-dot lasers fabricated on GaAs substrates in TECHNICAL PHYSICS
  • 2002-11 High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates in SEMICONDUCTORS
  • 2002-09 The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix in SEMICONDUCTORS
  • 2002-06 Molecular beam epitaxy of (Al)GaAsN using ammonia as a source of nitrogen in TECHNICAL PHYSICS LETTERS
  • 2001-09 1.55–1.6 μm electroluminescence of GaAs based diode structures with quantum dots in TECHNICAL PHYSICS LETTERS
  • 2000-05 Power conversion efficiency of quantum dot laser diodes in SEMICONDUCTORS
  • 2000-05 Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 µm wavelength range in SEMICONDUCTORS
  • 2000-01 A spatially single-mode laser for a range of 1.25–1.28 μm on the basis of InAs quantum dots on a GaAs substrate in SEMICONDUCTORS
  • 1999-11 X-Ray diffraction analysis of multilayer InAs-GaAs heterostructures with InAs quantum dots in SEMICONDUCTORS
  • 1999-08 Lasing at a wavelength close to 1.3 µm in InAs quantum-dot structures in SEMICONDUCTORS
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