S V Zaitsev

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Publications in SciGraph latest 50 shown

  • 2017-10 Heterostructures with InGaAs/GaAs quantum dots doped with transition elements: II. Study of the circularly polarized luminescence in TECHNICAL PHYSICS
  • 2017-08 Luminescence of Eu3+ rare-earth ions in Lu2O3 nanospheres in JETP LETTERS
  • 2017-06 Spontaneous luminescence of Eu3+ ions in porous Y2O3 nanospheres in OPTICS AND SPECTROSCOPY
  • 2016-09 Coherent spin dynamics of carriers in ferromagnetic semiconductor heterostructures with an Mn δ layer in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2013-09 Ferromagnetism of nanoclusters of chromium alloys and luminescence quenching in ZnSe/ZnMgSSe/ZnSSe: Cr heterostructures in PHYSICS OF THE SOLID STATE
  • 2012-01 Dynamic spin polarization by orientation-dependent separation in a ferromagnet–semiconductor hybrid in NATURE COMMUNICATIONS
  • 2011-07 Photoluminescence response of a quantum well to a change in the magnetic field of the Mn δ Layer in InGaAs/GaAs heterostructures in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2011-06 Nano- and heterostructures of magnetic semiconductors for spintronics in RUSSIAN CHEMICAL BULLETIN
  • 2011-02 Electron spin resonance in InGaAs/GaAs heterostructures with a manganese δ layer in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2010-11 Influence of delta〈Mn〉 doping parameters of the GaAs barrier on circularly polarized luminescence of GaAs/InGaAs heterostructures in PHYSICS OF THE SOLID STATE
  • 2010-10 Two-magnon Raman scattering in dielectric and superconducting YBa2Cu3O6+x crystals in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2010-07 Temperature dependence of radiative recombination in CdSe quantum dots with enhanced confinement in JETP LETTERS
  • 2010-01 Ferromagnetic effect of a Mn delta layer in the GaAs barrier on the spin polarization of carriers in an InGaAs/GaAs quantum well in JETP LETTERS
  • 2009-04 Radiative recombination in type-II ZnSe/BeTe heterostructures at high densities of free carriers in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2009-02 Renormalization of the band gap in highly photoexcited type-II ZnSe/BeTe structures in SEMICONDUCTORS
  • 2009 Electrically Driven Single Quantum Dot Emitter Operating at Room Temperature in ADVANCES IN SOLID STATE PHYSICS
  • 2008-12 Formation of metastable above-barrier hole states in ZnSe/BeTe type II heterostructures under high-density optical excitation in JETP LETTERS
  • 2008-07 Relaxation of excitons in semimagnetic asymmetric double quantum wells in SEMICONDUCTORS
  • 2008-05 Resonance tunneling of charge carriers in photoexcited type-II ZnSe/BeTe heterostructures in SEMICONDUCTORS
  • 2008-02 Magnetooptics of (Zn,Cd,Mn)Te/ZnTe heterostructures with a small discontinuity in the valence band potential in JETP LETTERS
  • 2008-02 Investigation of the effects of spin injection of charge carriers from a ferromagnetic Ni(Co)/GaAs Schottky contact in quantum well heterostructures in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2007-12 Excitons in artificial quantum dots in the weak spatial confinement regime in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2007-11 Production of quantum dots by selective interdiffusion in CdTe/CdMgTe quantum wells in SEMICONDUCTORS
  • 2007-06 Magnetooptics and dynamics of a magnetic polaron in semimagnetic CdSe/ZnMnSe quantum dots in JETP LETTERS
  • 2006-12 Circularly polarized electroluminescence of quantum-size InGaAs/GaAs heterostructures with ferromagnetic metal-GaAs Schottky contacts in TECHNICAL PHYSICS LETTERS
  • 2006-12 Exciton states in strongly coupled asymmetric semimagnetic double quantum dots in JETP LETTERS
  • 2006-11 Interwell exciton relaxation in semimagnetic asymmetric double quantum wells in JETP LETTERS
  • 2003-01 Electroluminescence of injection lasers based on vertically coupled quantum dots near the lasing threshold in SEMICONDUCTORS
  • 2001 Direct and indirect radiative recombination in strongly excited ZnSe/BeTe superlattices in PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS PART I
  • 2000-03 Treatment of inhomogeneous radiation broadening in quantum dot heterostructures described within the framework of the superradiation model in TECHNICAL PHYSICS LETTERS
  • 1999-12 Superradiance in semiconductors in SEMICONDUCTORS
  • 1999-09 Gain characteristics of quantum-dot injection lasers in SEMICONDUCTORS
  • 1999-08 Effect of ordering of mobile oxygen on spectra of two-magnon and electronic Raman scattering of light in YBa2Cu3O6+x crystals with different doping levels in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 1999-04 Influence of heating of the active region in InGaAsP/InP injection lasers on their spectral characteristics in TECHNICAL PHYSICS LETTERS
  • 1998-07 Investigation of the device characteristics of a low-threshold quantum-dot laser emitting at 1.9 µm in SEMICONDUCTORS
  • 1998-03 Injection lasers based on InGaAs quantum dots in an AlGaAs matrix in JOURNAL OF ELECTRONIC MATERIALS
  • 1998 Optical Switches and Modulators for Integrated Optoelectronic Systems in ADVANCED ELECTRONIC TECHNOLOGIES AND SYSTEMS BASED ON LOW-DIMENSIONAL QUANTUM DEVICES
  • 1997-09 Giant blue shift of photoluminescence in strongly excited type-II ZnSe/BeTe superlattices in JETP LETTERS
  • 1997-09 Quantum-dot lasers: Principal components of the threshold current density in SEMICONDUCTORS
  • 1997-04 Injection heterolaser based on an array of vertically aligned InGaAs quantum dots in a AlGaAs matrix in SEMICONDUCTORS
  • 1997-02 Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 °C in SEMICONDUCTORS
  • 1997-02 Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W in TECHNICAL PHYSICS LETTERS
  • 1997-01 Thermal stability of vertically coupled InAs-GaAs quantum dot arrays in SEMICONDUCTORS
  • 1996-12 Electron Raman scattering in Tl2Ba2CuO6+x crystals in JETP LETTERS
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