Andrey M Mizerov


Ontology type: schema:Person     


Person Info

NAME

Andrey M

SURNAME

Mizerov

Publications in SciGraph latest 50 shown

  • 2020-05-09 Influence of a Nanoporous Silicon Layer on the Practical Implementation and Specific Features of the Epitaxial Growth of GaN Layers on SiC/por-Si/c-Si Templates in SEMICONDUCTORS
  • 2020-04-28 Optical Properties of GaN/SiC/por-Si/Si(111) Hybrid Heterostructures in SEMICONDUCTORS
  • 2019-12-23 Electronic Structure of SiN Layers on Si(111) and SiC/Si(111) Substrates in SEMICONDUCTORS
  • 2019-12-04 Metal-Assisted Photochemical Etching of N- and Ga-Polar GaN Epitaxial Layers in SEMICONDUCTORS
  • 2019-12 Method for Controlling the Polarity of Gallium Nitride Layers in Epitaxial Synthesis of GaN/AlN Heterostructures on Hybrid SiC/Si Substrates in PHYSICS OF THE SOLID STATE
  • 2019-12 Photoemission Studies of the Electronic Structure of GaN Grown by Plasma Assisted Molecular Beam Epitaxy in PHYSICS OF THE SOLID STATE
  • 2019-09-03 On the Specific Features of the Plasma-Assisted MBE Synthesis of n+-GaN Layers on GaN/c-Al2O3 Templates in SEMICONDUCTORS
  • 2019-08-07 Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate in SEMICONDUCTORS
  • 2019-07-02 Investigation into the Influence of a Buffer Layer of Nanoporous Silicon on the Atomic and Electronic Structure and Optical Properties of AIIIN/por-Si Heterostructures Grown by Plasma-Activated Molecular-Beam Epitaxy in SEMICONDUCTORS
  • 2019-02 Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Substrates and SiC/Si(111) Epitaxial Layers in SEMICONDUCTORS
  • 2019-01 Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial InxGa1 –xN/Si(111) Heterostructures with a Nanocolumnar Film Morphology in SEMICONDUCTORS
  • 2018-12-24 Effect of a por-Si Buffer Layer on the Structure and Morphology of Epitaxial InxGa1 – xN/Si(111) Heterostructures in SEMICONDUCTORS
  • 2018-12 Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy in SEMICONDUCTORS
  • 2018-12 Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications in SEMICONDUCTORS
  • 2018-11-07 Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy in SEMICONDUCTORS
  • 2018-04-17 Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy in SEMICONDUCTORS
  • 2017-11 The effect of nitridation parameters and initial growth conditions on the polarity of GaN epitaxial layers grown by plasma-assisted molecular-beam epitaxy on Si(111) substrates in TECHNICAL PHYSICS LETTERS
  • 2015-02-05 Control over the morphology of AlN during molecular beam epitaxy with the plasma activation of nitrogen on Si (111) substrates in SEMICONDUCTORS
  • 2012-08-06 Quantum-confined stark effect and localization of charge carriers in Al0.3Ga0.7N/Al0.4Ga0.6N quantum wells with different morphologies in SEMICONDUCTORS
  • 2012-05 Solar-blind UV photocathodes based on AlGaN heterostructures with a 300- to 330-nm spectral sensitivity threshold in TECHNICAL PHYSICS LETTERS
  • 2012-05 RHEED monitoring of elastic stresses during MBE growth of group III nitride heterostructures in TECHNICAL PHYSICS LETTERS
  • 2009-08-13 Features of molecular beam epitaxy of the GaN (0001) and GaN (000) layers with the use of different methods of activation of nitrogen in SEMICONDUCTORS
  • 2008-12-17 AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy in SEMICONDUCTORS
  • 2008-05-09 Features of the spatial distribution of indium in InGaN epitaxial layers grown by plasma-assisted molecular beam epitaxy in SEMICONDUCTORS
  • 2007-04 Controlling active nitrogen flux in plasma-assisted molecular beam epitaxy of group III nitrides in TECHNICAL PHYSICS LETTERS
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