Dieter Bimberg

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Publications in SciGraph latest 50 shown

  • 2017-11-19 Quantum-Dot Mode-Locked Lasers: Sources for Tunable Optical and Electrical Pulse Combs in GREEN PHOTONICS AND ELECTRONICS
  • 2017-11-19 Quantum-Dot Semiconductor Optical Amplifiers for Energy-Efficient Optical Communication in GREEN PHOTONICS AND ELECTRONICS
  • 2016-06 Vertical-cavity surface-emitting lasers with nanostructures for optical interconnects in FRONTIERS OF OPTOELECTRONICS
  • 2016-06 Novel types of photonic band crystal high power and high brightness semiconductor lasers in FRONTIERS OF OPTOELECTRONICS
  • 2014-12 Manifestation of unconventional biexciton states in quantum dots in NATURE COMMUNICATIONS
  • 2014 Electronic Properties of III-V Quantum Dots in MULTI-BAND EFFECTIVE MASS APPROXIMATIONS
  • 2013-12 Quantum coherence induces pulse shape modification in a semiconductor optical amplifier at room temperature in NATURE COMMUNICATIONS
  • 2013-05 High-frequency electrical properties of a vertical-cavity surface-emitting laser with a monolithically integrated electro-optical modulator in SEMICONDUCTORS
  • 2011-08-02 Halbleiter-Quantenpunkte – ein Blick in die Welt der Nanos in PHYSIK IM 21. JAHRHUNDERT
  • 2011-03 Luminescence of the cadmium telluride quantum dots in the porous silicon oxide in LASER PHYSICS
  • 2009-05 Quantum dot semiconductor lasers of the 1.3 μm wavelength range with high temperature stability of the lasing wavelength (0.2 nm/K) in SEMICONDUCTORS
  • 2008 TEM Characterization of Self-Organized (In,Ga)N Quantum Dots in MICROSCOPY OF SEMICONDUCTING MATERIALS 2007
  • 2007-09 Submonolayer Quantum Dots for High Speed Surface Emitting Lasers in NANOSCALE RESEARCH LETTERS
  • 2007-06-30 Quantum dots for GaAs-based surface emitting lasers at 1300 nm in ADVANCES IN SOLID STATE PHYSICS 40
  • 2007 Size-Tunable Exchange Interaction in InAs/GaAs Quantum Dots in ADVANCES IN SOLID STATE PHYSICS
  • 2006-04 Optical studies of asymmetric-waveguide submonolayer InGaAs QD microdisks formed by selective oxidation in SEMICONDUCTORS
  • 2005-12 Continuous-wave lasing of single-mode metamorphic quantum dot lasers for the 1.5-μm spectral region in SEMICONDUCTORS
  • 2005-10 Nonequilibrium room-temperature carrier distribution in InAs quantum dots overgrown with thin AlAs/InAlAs layers in SEMICONDUCTORS
  • 2005-06 The optical properties of heterostructures with quantum-confined InGaAsN layers on a GaAs substrate and emitting at 1.3–1.55 μm in SEMICONDUCTORS
  • 2004-03 Structural and optical properties of heterostructures with InAs quantum dots in an InGaAsN quantum well grown by molecular-beam epitaxy in SEMICONDUCTORS
  • 2003-07 Control over the parameters of InAs-GaAs quantum dot arrays in the Stranski-Krastanow growth mode in SEMICONDUCTORS
  • 2003-01 Long-term stability of long-wavelength (>1.25 µm) quantum-dot lasers fabricated on GaAs substrates in TECHNICAL PHYSICS
  • 2002 Entropy Effects in the Self-Organized Formation of Nanostructures in ATOMISTIC ASPECTS OF EPITAXIAL GROWTH
  • 2001-07 1.3 µm vertical microcavities with InAs/InGaAs quantum dots and devices based on them in SEMICONDUCTORS
  • 2001-05 Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces in JOURNAL OF ELECTRONIC MATERIALS
  • 2001 Monte Carlo Simulation of the Self-Organized Growth of Quantum Dots with Anisotropic Surface Diffusion in PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS PART I
  • 2000-05 Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 µm wavelength range in SEMICONDUCTORS
  • 2000-03 Mechanisms of InGaAlAs solid solution decomposition stimulated by InAs quantum dots in SEMICONDUCTORS
  • 1999-12 Quantum dot lasers: recent progress in theoretical understanding and demonstration of high-output-power operation in APPLIED PHYSICS B
  • 1999-11 Effect of growth conditions on InAs nanoislands formation on Si(100) surface in CZECHOSLOVAK JOURNAL OF PHYSICS
  • 1999-09 Gain characteristics of quantum-dot injection lasers in SEMICONDUCTORS
  • 1999-08 Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands in SEMICONDUCTORS
  • 1999-08 Lasing at a wavelength close to 1.3 µm in InAs quantum-dot structures in SEMICONDUCTORS
  • 1999-05 InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 µm in SEMICONDUCTORS
  • 1998-07 Lasing in submonolayer InAs/AlGaAs structures without external optical confinement in TECHNICAL PHYSICS LETTERS
  • 1998-05 Formation of InSb quantum dots in a GaSb matrix in JOURNAL OF ELECTRONIC MATERIALS
  • 1998-05 Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region in TECHNICAL PHYSICS LETTERS
  • 1998-04 Fabrication of InAs quantum dots on silicon in TECHNICAL PHYSICS LETTERS
  • 1998-01 Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates in SEMICONDUCTORS
  • 1997-04 Direct formation of InGaAs/GaAs quantum dots during submonolayer epitaxies from molecular beams in CZECHOSLOVAK JOURNAL OF PHYSICS
  • 1997-04 Injection heterolaser based on an array of vertically aligned InGaAs quantum dots in a AlGaAs matrix in SEMICONDUCTORS
  • 1997-02 Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 °C in SEMICONDUCTORS
  • 1997-01 Modulation of a quantum well potential by a quantum-dot array in SEMICONDUCTORS
  • 1997-01 Thermal stability of vertically coupled InAs-GaAs quantum dot arrays in SEMICONDUCTORS
  • 1996 MBE Growth of (In,Ga)As Self-Assembled Quantum Dots for Optoeletronic Applications in DEVICES BASED ON LOW-DIMENSIONAL SEMICONDUCTOR STRUCTURES
  • 1989 Coupling Induced Enhancement of Interface Recombination in GaAs Multiple Quantum Well Structures in ESSDERC ’89
  • 1988-05 Gain-switched semiconductor laser amplifier as an ultrafast dynamical optical gate in APPLIED PHYSICS B
  • 1986 High Sensitivity Picosecond Optical Pulse Detection by Semiconductor Laser Amplifiers Via Cross-Correlation in HIGH-SPEED ELECTRONICS
  • 1969-08 Electron-lattice interaction in the absorption spectra of thallium doped alkali halides in ZEITSCHRIFT FÜR PHYSIK
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