V A Volodin


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Person Info

NAME

V A

SURNAME

Volodin

Publications in SciGraph latest 50 shown

  • 2018-09 Aluminum-induced crystallization of silicon suboxide thin films in APPLIED PHYSICS A
  • 2018-09 On the Formation of IR-Light-Emitting Ge Nanocrystals in Ge:SiO2 Films in SEMICONDUCTORS
  • 2018-08 Atomic and Electronic Structures of Metal-Rich Noncentrosymmetric ZrOx in JETP LETTERS
  • 2018-06 Optical Properties of Nonstoichiometric Tantalum Oxide TaOx (x < 5/2) According to Spectral-Ellipsometry and Raman-Scattering Data in OPTICS AND SPECTROSCOPY
  • 2018-06 Forbidden Resonant Raman Scattering in GaAs/AlAs Superlattices: Experiment and Calculations in SEMICONDUCTORS
  • 2018-05 New Method of Porous Ge Layer Fabrication: Structure and Optical Properties in SEMICONDUCTORS
  • 2018-05 Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride in TECHNICAL PHYSICS LETTERS
  • 2018-02 Ion-Beam Synthesis of the Crystalline Ge Phase in SiOxNy Films upon Annealing under High Pressure in SEMICONDUCTORS
  • 2017-10 Formation and study of p–i–n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region in SEMICONDUCTORS
  • 2017-09 Specific features of the ion-beam synthesis of Ge nanocrystals in SiO2 thin films in SEMICONDUCTORS
  • 2017-07 Synthesis of basic bismuth(III) oxalate by precipitation from nitrate solutions in RUSSIAN JOURNAL OF APPLIED CHEMISTRY
  • 2017-03 Splitting of frequencies of optical phonons in tensile-strained germanium layers in JETP LETTERS
  • 2016-09 Raman studies of phase and atomic compositions of GeSi nanosystems after pulsed annealing in OPTOELECTRONICS, INSTRUMENTATION AND DATA PROCESSING
  • 2016-09 Formation of silicon nanocrystals in Si—SiO2—α-Si—SiO2 heterostructures during high-temperature annealing: Experiment and simulation in OPTOELECTRONICS, INSTRUMENTATION AND DATA PROCESSING
  • 2016-07 Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing in SEMICONDUCTORS
  • 2016-07 Angular dependence of Raman scattering selection rules for long-wavelength optical phonons in short-period GaAs/AlAs superlattices in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2016-05 Luminescence in GeOx films containing germanium nanoclusters in NANOTECHNOLOGIES IN RUSSIA
  • 2015-12 Infrared photoluminescence from GeSi nanocrystals embedded in a germanium–silicate matrix in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2015-05 Interaction of optical and interface phonons and their anisotropy in GaAs/AlAs superlattices: Experiment and calculations in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2015-03 Redshift of the absorption edge in tensile-strained germanium layers in JETP LETTERS
  • 2014-10 Effect of hydrostatic pressure during the annealing of silicon-on-insulator films implanted with a high hydrogen-ion dose in SEMICONDUCTORS
  • 2014-06 Comparison of various methods for transferring graphene and few layer graphene grown by chemical vapor deposition to an insulating SiO2/Si substrate in SEMICONDUCTORS
  • 2014-06 Anisotropy of long-wavelength optical phonons in GaAs/AlAs superlattices in JETP LETTERS
  • 2014-05 Electron-phonon interaction and Raman scattering in doped GaAs/AlAs superlattices in OPTOELECTRONICS, INSTRUMENTATION AND DATA PROCESSING
  • 2014-05 Phase separation as a basis for the formation of light-emitting silicon nanoclusters in SiOx films irradiated with swift heavy ions in OPTOELECTRONICS, INSTRUMENTATION AND DATA PROCESSING
  • 2014-02 Raman scattering in PbTe and PbSnTe films: In situ phase transformations in SEMICONDUCTORS
  • 2014-01 Functionalization of graphene and few-layer graphene films in an hydrofluoric acid aqueous solution in NANOTECHNOLOGIES IN RUSSIA
  • 2014-01 Applying an improved phonon confinement model to the analysis of Raman spectra of germanium nanocrystals in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2013-09 Photoluminescence and Raman scattering of silicon nanopowders in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2013-09 Formation and structural features of silicon quantum dots in germanium in OPTOELECTRONICS, INSTRUMENTATION AND DATA PROCESSING
  • 2013-09 Layered structures based on hydrogenated graphene with high carrier mobility in NANOTECHNOLOGIES IN RUSSIA
  • 2013-05 Crystallization induced by thermal annealing with millisecond pulses in silicon-on-insulator films implanted with high doses of hydrogen ions in SEMICONDUCTORS
  • 2013-03 Influence of irradiation with swift heavy ions on multilayer Si/SiO2 heterostructures in SEMICONDUCTORS
  • 2013-01 Improved model of optical phonon confinement in silicon nanocrystals in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2012-12 SiGe quantum rings on the Si(100) surface in RUSSIAN MICROELECTRONICS
  • 2012-10 Quantum-confinement effect in silicon-on-insulator films implanted with high doses of hydrogen ions in SEMICONDUCTORS
  • 2012-06 Anomalous temperature dependence of photoluminescence in GeOx films and GeOx/SiO2 nano-heterostructures in JETP LETTERS
  • 2012-05 Formation of conductive layers inside diamond by hydrogen ion implantation and subsequent thermal treatment at low or high pressures in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2012-03 Folding of acoustic-phonon modes in GaAs/AlAs (311)A superlattices in the direction perpendicular to nanofacets in JETP LETTERS
  • 2012-01 Experience in depositing carbon coatings by the gas-jet method in JOURNAL OF ENGINEERING PHYSICS AND THERMOPHYSICS
  • 2011-10 Oxidation kinetics of a silicon surface in a plasma of oxygen with inert gases in OPTOELECTRONICS, INSTRUMENTATION AND DATA PROCESSING
  • 2011-10 Formation of light-emitting nanostructures in layers of stoichiometric SiO2 irradiated with swift heavy ions in SEMICONDUCTORS
  • 2011-07 Femtosecond pulse crystallization of thin amorphous hydrogenated films on glass substrates using near ultraviolet laser radiation in JETP LETTERS
  • 2011-07 Formation of silicon nanocrystals in SiNx film on PET substrates using femtosecond laser pulses in TECHNICAL PHYSICS LETTERS
  • 2011-02 Crystallization of hydrogenated amorphous silicon films by exposure to femtosecond pulsed laser radiation in SEMICONDUCTORS
  • 2011-02 Anisotropy of phonon-plasmon modes in GaAs/AlAs(311) superlattices in PHYSICS OF THE SOLID STATE
  • 2011-01 Raman scattering spectroscopy of inclusions of carbon in Al2O3 films and its solid solutions with HfO2 in OPTICS AND SPECTROSCOPY
  • 2010-12 Formation and crystallization of silicon nanoclusters in SiNx:H films using femtosecond pulsed laser annealings in SEMICONDUCTORS
  • 2010-05 Modification of germanium nanoclusters in GeOx films during isochronous furnace and pulse laser annealing in TECHNICAL PHYSICS LETTERS
  • 2010-04 X-ray and infrared spectroscopy of layers produced by cosputtering of spatially separated SiO2 and Si sources in SEMICONDUCTORS
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