Ruben Pawlovitch Seisyan


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Person Info

NAME

Ruben Pawlovitch

SURNAME

Seisyan

Publications in SciGraph latest 50 shown

  • 2020-04-28 Temperature-Dependent Total Absorption of Exciton Polaritons in Bulk Semiconductors in SEMICONDUCTORS
  • 2020-04-28 Features of SiO2 Layers Synthesized on Silicon by Molecular Layer Deposition in SEMICONDUCTORS
  • 2017-06-11 Effect of a Coulomb well in (In, Ga)As/GaAs quantum wells in PHYSICS OF THE SOLID STATE
  • 2017-04 Scattering of an exciton polariton by impurity centers in GaAs in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2017-01 Absorption of the laser radiation by the laser plasma with gas microjet targets in TECHNICAL PHYSICS LETTERS
  • 2016-05-21 Diamagnetic excitons in semiconductors (Review) in PHYSICS OF THE SOLID STATE
  • 2015-06-19 Diffusive Propagation of Exciton-Polaritons through Thin Crystal Slabs in SCIENTIFIC REPORTS
  • 2015-02-18 Elastic scattering of exciton polaritons in PHYSICS OF THE SOLID STATE
  • 2014-10-09 “Exciton” photoconductivity in GaAs crystals in SEMICONDUCTORS
  • 2014-08-31 The effect of a UV preionization pulse on short-wave radiation output from a laser-produced-plasma source with a Xe gas-jet target in TECHNICAL PHYSICS LETTERS
  • 2014-06-12 Evaluation of the quality of GaAs epitaxial layers and their interfaces from analysis of the exciton absorption spectra in SEMICONDUCTORS
  • 2014-05-07 Optical transmittance of thin GaAs wafers upon laser pumping in the region of exciton resonances and the continuum of states: Exciton-exciton interaction in SEMICONDUCTORS
  • 2013-07-14 Exciton absorption of the GaAs semiconductor crystals under optical pumping to the conduction band in TECHNICAL PHYSICS
  • 2012-10 Temperature-dependent integral exciton absorption in semiconducting GaAs crystals in TECHNICAL PHYSICS LETTERS
  • 2012-07-06 Diamagnetic exciton polariton in the interband magnetooptics of semiconductors in SEMICONDUCTORS
  • 2012-07 A study of direct optical transitions in silicon single crystals based on transmission spectra in TECHNICAL PHYSICS LETTERS
  • 2012-02 Temperature-dependent integral exciton absorption in semiconducting InP crystals in TECHNICAL PHYSICS LETTERS
  • 2012-02 Interaction of polarized light with comb-shaped metal-coated nanostructures in TECHNICAL PHYSICS LETTERS
  • 2011-08-06 Nanolithography in microelectronics: A review in TECHNICAL PHYSICS
  • 2011-01 Temperature-dependent excitonic absorption in long-period multiple InxGa1 − xAs/GaAs quantum well structures in SEMICONDUCTORS
  • 2009-05-06 Width of the excitonic absorption line in AlxGa1 − xas alloys in SEMICONDUCTORS
  • 2008-06-13 Generation of superradiation in quantum dot nanoheterostructures in SEMICONDUCTORS
  • 2008-03 The role of transport processes of nonequilibrium charge carriers in radiative properties of arrays of InAs/GaAs quantum dots in SEMICONDUCTORS
  • 2007-06 Free-standing optical filters for a nanolithography source operating in the 12–15 nm wavelength range in TECHNICAL PHYSICS LETTERS
  • 2007-04 Thin epitaxial GaN films ablated by a pulsed KrF excimer laser in TECHNICAL PHYSICS LETTERS
  • 2006-11 Excitons and polaritons in AlGaAs semiconductor alloys in SEMICONDUCTORS
  • 2006-01 Photocurrent in self-organized InAs quantum dots in 1.3 μm InAs/InGaAs/GaAs semiconductor laser heterostructures in SEMICONDUCTORS
  • 2005-11 Phase transitions in thin titanium oxide films under the action of excimer laser radiation in TECHNICAL PHYSICS LETTERS
  • 2005-05 Extreme ultraviolet nanolithography for ULSI: A review in TECHNICAL PHYSICS
  • 2002-03 Photoablation of thin indium oxide films under the action of a pulsed arf excimer laser in TECHNICAL PHYSICS LETTERS
  • 2001-02 Contrast enhancement in image transfer via interaction of UV radiation with inorganic photoresist films in SEMICONDUCTORS
  • 2000-12 The ablation threshold in amorphous diamondlike carbon films exposed to an ArF excimer laser radiation in TECHNICAL PHYSICS LETTERS
  • 2000-07 Simulation of photochemical transformations and photodarkening in photoresist films exposed to pulsed vacuum-ultraviolet radiation in SEMICONDUCTORS
  • 2000-07 Magnetic absorption of hexagonal crystals CdSe in strong and weak fields: Quasi-cubic approximation in PHYSICS OF THE SOLID STATE
  • 2000-03 Exciton luminescence of quasi-two-dimensional solid solutions in JETP LETTERS
  • 1999-05 Above-barrier excitons: First magnetooptic investigation in JETP LETTERS
  • 1999-01 Fano effect in the magnetoabsorption spectra of gallium arsenide in SEMICONDUCTORS
  • 1998-05 Thickness dependence of exciton absorption in pure GaAs crystals at the “prequantum” limit in PHYSICS OF THE SOLID STATE
  • 1998-05 Anomalous behavior of excitons at light holes in strained (In, Ga)As/GaAs heterostructures in PHYSICS OF THE SOLID STATE
  • 1997-09 The effect of a “Coulomb well” on the absorption and magnetoabsorption spectra of strained InGaAs/GaAs heterostructures in SEMICONDUCTORS
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