Alexey N Semenov

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Alexey N



Publications in SciGraph latest 50 shown

  • 2018-12-24 Features of the Selective Growth of GaN Nanorods on Patterned c-Sapphire Substrates of Various Configurations in SEMICONDUCTORS
  • 2018-04-17 Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands in SEMICONDUCTORS
  • 2018-04-17 Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on μ-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE in SEMICONDUCTORS
  • 2018-03-27 Contactless Measurement of Electron Concentration in Undoped Homoepitaxial InSb Layers in JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS
  • 2016-12-17 Photoreflectance of indium antimonide in PHYSICS OF THE SOLID STATE
  • 2016-10 Metamorphic InAs/InGaAs/InAlAs quantum wells with submonolayer InSb insertions emitted in the mid-infrared spectral range in TECHNICAL PHYSICS LETTERS
  • 2014-03-07 Peculiarities of the electrophysical properties of InSb/AlInSb/AlSb heterostructures with a high electron concentration in the two-dimensional channel in SEMICONDUCTORS
  • 2013-02-19 Determination of the thickness and spectral dependence of the refractive index of AlxIn1 − xSb epitaxial layers from reflectance spectra in SEMICONDUCTORS
  • 2011-11 Optical Properties of Epitaxial AlxIn1−xSb Alloy Layers in SEMICONDUCTORS
  • 2011-10-07 Features of molecular-beam epitaxy and structural properties of AlInSb-based heterostructures in SEMICONDUCTORS
  • 2010-08-18 Study of photoluminescence and electroluminescence mechanisms in quantum-confined InSb/InAs heterostructures in SEMICONDUCTORS
  • 2010-05-09 Molecular beam epitaxy of thermodynamically metastable GaInAsSb alloys for medium IR-range photodetectors in SEMICONDUCTORS
  • 2010-02 Spin injection in GaAs/GaSb quantum-well heterostructures in SEMICONDUCTORS
  • 2009-05-06 Anomalous spin splitting of electrons in type-II InSb quantum dots in InAs in SEMICONDUCTORS
  • 2008-01-01 Antimony Distribution in the InSb/InAs QD Heterostructures in NARROW GAP SEMICONDUCTORS 2007
  • 2008-01 In situ study of the formation kinetics of InSb quantum dots grown in an InAs(Sb) matrix in SEMICONDUCTORS
  • 2008-01-01 Anomalous Spin Splitting of Electrons in InSb Type-II Quantum Dots in an InAs Matrix in NARROW GAP SEMICONDUCTORS 2007
  • 2007-01 InSb/InAsSb nanostructures for Mid-IR optoelectronics in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2005-03 Midinfrared injection-pumped laser based on a III–V/II–VI hybrid heterostructure with submonolayer InSb insets in TECHNICAL PHYSICS LETTERS
  • 2004-03 Special features of Sb2 and Sb4 incorporation in MBE-grown AlGaAsSb alloys in SEMICONDUCTORS
  • 2003-06 Mid-infrared (λ=2.775 µm) injection laser based on AlGaAsSb/InAs/CdMgSe hybrid double heterostructure grown by molecular-beam epitaxy in SEMICONDUCTORS
  • 2002-12 MBE growth and photoluminescent properties of InAsSb/AlSbAs quantum wells in SEMICONDUCTORS
  • 2002-07 GaAs in GaSb: Strained nanostructures for mid-infrared optoelectronics in SEMICONDUCTORS
  • 2002-04 Far infrared electroluminescence in cascade type-II heterostructures in JETP LETTERS
  • 2001 Asymmetric Hybrid Al(Ga)SbAs/InAs/Cd(Mg)Se Heterostructures for Mid-IR LEDS and Lasers in MRS ADVANCES
  • Affiliations

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