M V Shaleev


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Person Info

NAME

M V

SURNAME

Shaleev

Publications in SciGraph latest 50 shown

  • 2018-12 On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates in SEMICONDUCTORS
  • 2018-03 Visible Emission from a Dense Biexciton Gas in SiGe/Si Quantum Wells under External Anisotropic Strain in JETP LETTERS
  • 2018-01 Strain-Induced Intrinsic Splitting of the Biexciton Ground State in SiGe/Si Quantum Wells in JOURNAL OF RUSSIAN LASER RESEARCH
  • 2018-01 Visible Luminescence of SiGe/Si Quantum Wells Under an External Anisotropic Deformation in JOURNAL OF RUSSIAN LASER RESEARCH
  • 2017-12 Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells in SEMICONDUCTORS
  • 2017-11 Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates in SEMICONDUCTORS
  • 2016-12 Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures in SEMICONDUCTORS
  • 2016-12 On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells in SEMICONDUCTORS
  • 2016-12 Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers in SEMICONDUCTORS
  • 2016-11 Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands in SEMICONDUCTORS
  • 2016-11 Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method in SEMICONDUCTORS
  • 2016-08 Plasmonic enhancement of four-particle radiative recombination in SiGe quantum wells in JETP LETTERS
  • 2016-08 Fine structure of the emission spectrum of a two-dimensional electron–hole liquid in SiGe/Si quantum wells in JETP LETTERS
  • 2015-11 Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy in SEMICONDUCTORS
  • 2015-11 Excitation spectra of photoluminescence and its kinetics in structures with self-assembled Ge:Si nanoislands in SEMICONDUCTORS
  • 2015-08 Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer in SEMICONDUCTORS
  • 2015-01 Plastic relaxation in GeSi layers on Si (001) and Si (115) substrates in SEMICONDUCTORS
  • 2013-03 Transition from the two- to three-dimensional growth of Ge films upon deposition onto relaxed SiGe/Si(001) buffer layers in SEMICONDUCTORS
  • 2012-11 Effect of silicon spacer thickness on the electroluminescence of multilayer structures with self-assembled Ge(Si)/Si(001) islands in SEMICONDUCTORS
  • 2011-02 Photoluminescence line width of self-assembled Ge(Si) islands arranged between strained Si layers in SEMICONDUCTORS
  • 2010-04 Study of the transition of the epitaxial Ge film from layer-to-layer to three-dimensional growth in heterostructures with strained SiGe sublayers in SEMICONDUCTORS
  • 2008-03 Comparative analysis of photoluminescence and electroluminescence of multilayer structures with self-assembled Ge(Si)/Si(001) island in SEMICONDUCTORS
  • 2007-11 Effect of growth temperature on photoluminescence of self-assembled Ge(Si) islands confined between strained Si layers in SEMICONDUCTORS
  • 2007-02 Effect of tensile-strained Si layer on photoluminescence of Ge(Si) self-assembled islands grown on relaxed SiGe/Si(001) buffer layers in SEMICONDUCTORS
  • 2006-03 Special features of the photoluminescence of self-assembled Ge(Si)/Si(001) islands grown on a strained Si1−xGex layer in SEMICONDUCTORS
  • 2006-02 Special features of the formation of Ge(Si) islands on the relaxed Si1−xGex/Si(001) buffer layers in SEMICONDUCTORS
  • 2005-07 Fabrication of Strain-Relaxed Si1 − xGex/Si(001) Buffer Layers of Low Surface Roughness in RUSSIAN MICROELECTRONICS
  • 2005 GeSi/Si(001) Structures with Self-Assembled Islands: Growth and Optical Properties in QUANTUM DOTS: FUNDAMENTALS, APPLICATIONS, AND FRONTIERS
  • 2005-01 Influence of the germanium deposition rate on the growth and Photoluminescence of Ge(Si)/Si(001) self-assembled islands in PHYSICS OF THE SOLID STATE
  • 2005-01 Negative photoconductivity of selectively doped SiGe/Si: B heterostructures with a two-dimensional hole gas in the middle-infrared range in PHYSICS OF THE SOLID STATE
  • 2005-01 Si1−xGex/Si(001) relaxed buffer layers grown by chemical vapor deposition at atmospheric pressure in PHYSICS OF THE SOLID STATE
  • 2004-01 Photoluminescence of self-assembled GeSi/Si(001) nanoislands of different shapes in PHYSICS OF THE SOLID STATE
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