V I Ivanov Omskii


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Person Info

NAME

V I

SURNAME

Ivanov Omskii

Publications in SciGraph latest 50 shown

  • 2017-05 Analysis of IR spectra of mineralized deposits on human cardiac valves in TECHNICAL PHYSICS LETTERS
  • 2016 Peculiarities of Physical Properties of Semimagnetic Semiconductors and Their Practical Application in NANOSTRUCTURES AND THIN FILMS FOR MULTIFUNCTIONAL APPLICATIONS
  • 2014-08 Characteristics of hydrogen bonds in D-glucose in TECHNICAL PHYSICS LETTERS
  • 2012-04 Gas-discharge probe microscopy of water-carrying channels in wood in TECHNICAL PHYSICS LETTERS
  • 2012-02 Model of cooperative character of hydrogen bonds in water in TECHNICAL PHYSICS LETTERS
  • 2011-07 Photoluminescence of Hg1 − xCdxTe based heterostructures grown by molecular-beam epitaxy in SEMICONDUCTORS
  • 2010-12 Photoluminescence of CdHgTe based nanoheterostructures in TECHNICAL PHYSICS LETTERS
  • 2010-12 Photoluminescence of CdHgTe epilayers grown on silicon substrates in TECHNICAL PHYSICS LETTERS
  • 2009-02 Effect of annealing on the optical and photoelectrical properties of CdxHg1 − xTe heteroepitaxial structures for the middle infrared range in TECHNICAL PHYSICS LETTERS
  • 2008-12 Electrical properties of n-HgCdTe heteroepitaxial layers modified by ion etching in SEMICONDUCTORS
  • 2008-09 Vibrational spectroscopy of amorphous carbon modified with Pt in SEMICONDUCTORS
  • 2008-03 Size distribution function of ultradisperse diamonds in TECHNICAL PHYSICS LETTERS
  • 2008-03 Platinum nanoclusters encapsulated in amorphous carbon in SEMICONDUCTORS
  • 2007-12 Special properties of X-ray diffraction on carbon onions in SEMICONDUCTORS
  • 2007-10 Specific features in the energy spectrum of the narrow-gap semiconductor bicrystals Bi1 − xSbx (0.06 ≤ x ≤ 0.20) in SEMICONDUCTORS
  • 2007-08 Allotropic composition of amorphous carbon in SEMICONDUCTORS
  • 2007-07 Catalytic layers for fuel cells based on polyaniline and α-C〈Pt〉 composite obtained by magnetron sputtering in TECHNICAL PHYSICS LETTERS
  • 2007-07 Conduction type conversion in ion etching of Au- and Ag-doped narrow-gap HgCdTe single crystal in SEMICONDUCTORS
  • 2007-06 1.5–1.8 μm photoluminescence of MBE-grown HgCdTe films in TECHNICAL PHYSICS LETTERS
  • 2007-03 Negative luminescence and devices based on this phenomenon in SEMICONDUCTORS
  • 2006-07 Spectral ellipsometry of a nanodiamond composite in SEMICONDUCTORS
  • 2006-01 Doping of epitaxial layers and heterostructures based on HgCdTe in SEMICONDUCTORS
  • 2005-12 Electroluminescence of graded-gap structures with blocking and ohmic contacts in SEMICONDUCTORS
  • 2005-10 Forming composites based on mineral fibers in TECHNICAL PHYSICS LETTERS
  • 2005-10 Temperature dependence of the threshold current of QW lasers in SEMICONDUCTORS
  • 2005-10 Optical properties of interstellar medium in TECHNICAL PHYSICS LETTERS
  • 2005-08 Raman spectroscopy study of the carbon structure of a-C:(H, Cu) and a-C:(H, Co) composite films in SEMICONDUCTORS
  • 2005-08 Transport of protons in amorphous hydrogenated carbon in SEMICONDUCTORS
  • 2005-07 Magnetic properties of iron-modified amorphous carbon in SEMICONDUCTORS
  • 2005-06 Interstitial carbon showing up in the absorption spectra of natural diamonds in TECHNICAL PHYSICS
  • 2004-12 Raman spectra of iron-modified amorphous carbon in TECHNICAL PHYSICS LETTERS
  • 2004-12 Size distribution of cobalt nanoclusters in an amorphous carbon matrix in SEMICONDUCTORS
  • 2004-10 The N3 center luminescence quenched by nitrogen impurity in natural diamond in TECHNICAL PHYSICS LETTERS
  • 2003-10 Optical properties of hydrogenated amorphous carbon films deposited from glow discharge plasma in TECHNICAL PHYSICS LETTERS
  • 2003-10 Spectral ellipsometry of amorphous hydrogenated carbon grown by magnetron sputtering of graphite in SEMICONDUCTORS
  • 2003-10 Photoluminescence from amorphous carbon grown by laser ablation of graphite in SEMICONDUCTORS
  • 2003-10 Modification of Hg1−xCdxTe properties by low-energy ions in SEMICONDUCTORS
  • 2003-09 One-phonon Raman spectra of carbon in composite films prepared by modification of amorphous hydrogenated carbon by copper and cobalt in PHYSICS OF THE SOLID STATE
  • 2003-08 Defect formation in epitaxial layers of cadmium mercury telluride solid solutions highly doped with indium in TECHNICAL PHYSICS LETTERS
  • 2003-04 Raman spectroscopy of amorphous carbon modified with iron in SEMICONDUCTORS
  • 2003 Encapsulation of Co Nanoclusters in A-C:H in LOW-DIMENSIONAL SYSTEMS: THEORY, PREPARATION, AND SOME APPLICATIONS
  • 2002-11 Electrical properties of CdxHg1−xTe and ZnxCdyHg1−x−yTe modified by low-energy ion bombardment in TECHNICAL PHYSICS LETTERS
  • 2002-10 Variation of the amorphous carbon density under the action of 10–500 eV carbon atoms in TECHNICAL PHYSICS LETTERS
  • 2002-07 Analysis of the size-distribution function of metallic nanoclusters in a hydrogenated amorphous carbon host in SEMICONDUCTORS
  • 2002-06 Vibratonal spectroscopy of a-C:H(Co) in SEMICONDUCTORS
  • 2002-01 Density of states in amorphous carbon and its modification by annealing in SEMICONDUCTORS
  • 2001-12 Scanning tunneling spectroscopy of a-C:H and a-C:(H, Cu) films prepared by magnetron sputtering in SEMICONDUCTORS
  • 2001-08 Negative ion emission accompanying the field electron emission from amorphous hydrogenated carbon in TECHNICAL PHYSICS LETTERS
  • 2001-03 Influence of amorphous hydrogenated carbon coating on the strength and cracking resistance of a glass in the high-strength state in PHYSICS OF THE SOLID STATE
  • 2001-02 Optical properties of amorphous carbon films deposited by magnetron sputtering of graphite in SEMICONDUCTORS
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