Nikolai A Maleev


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Person Info

NAME

Nikolai A

SURNAME

Maleev

Publications in SciGraph latest 50 shown

  • 2020-12 The Effect of a Saturable Absorber in Long-Wavelength Vertical-Cavity Surface-Emitting Lasers Fabricated by Wafer Fusion Technology in TECHNICAL PHYSICS LETTERS
  • 2020-10-09 1.55-μm-Range Vertical-Cavity Surface-Emitting Lasers, Manufactured by Wafer Fusion of Heterostructures Grown by Solid-Source Molecular-Beam Epitaxy in SEMICONDUCTORS
  • 2020-09 A Vertical-Cavity Surface-Emitting Laser for the 1.55-μm Spectral Range with Tunnel Junction Based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs Layers in TECHNICAL PHYSICS LETTERS
  • 2020-08 Investigation of Anomalous Lasing in Vertical-Cavity Surface-Emitting Lasers of the 850-nm Spectral Range with a Double Oxide Current Aperture at Large Gain-to-Cavity Detuning in OPTICS AND SPECTROSCOPY
  • 2019-11 InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics in TECHNICAL PHYSICS LETTERS
  • 2019-10 Heterobarrier Varactors with Nonuniformly Doped Modulation Layers in TECHNICAL PHYSICS LETTERS
  • 2019-09 The Effect of Active Region Heating on Dynamic and Power Characteristics of Quantum Cascade Lasers Emitting at a Wavelength of 4.8 µm at Room Temperature in OPTICS AND SPECTROSCOPY
  • 2019-08-07 Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers in SEMICONDUCTORS
  • 2019-07 Analysis of the Internal Optical Losses of the Vertical-Cavity Surface-Emitting Laser of the Spectral Range of 1.55 µm Formed by a Plate Sintering Technique in OPTICS AND SPECTROSCOPY
  • 2018-10 Epitaxial InGaAs/InAlAs/AlAs Structures for Heterobarrier Varactors with Low Leakage Current in TECHNICAL PHYSICS LETTERS
  • 2018-09 Quantum-Cascade Lasers Generating at the 4.8-μm Wavelength at Room Temperature in TECHNICAL PHYSICS LETTERS
  • 2018-07 Laser Source for a Compact Nuclear Magnetic Resonance Gyroscope in GYROSCOPY AND NAVIGATION
  • 2018-06-07 On the Fabrication and Study of Lattice-Matched Heterostructures for Quantum Cascade Lasers in SEMICONDUCTORS
  • 2018-01-17 Optically pumped lasing in a rolled-up dot-in-a-well (DWELL) microtube via the support of Au pad in APPLIED PHYSICS B
  • 2018-01 The Influence of Cavity Design on the Linewidth of Near-IR Single-Mode Vertical-Cavity Surface-Emitting Lasers in TECHNICAL PHYSICS LETTERS
  • 2018-01 Investigation of the Modified Structure of a Quantum Cascade Laser in SEMICONDUCTORS
  • 2018-01 A Design and New Functionality of Antiwaveguiding Vertical-Cavity Surface-Emitting Lasers for a Wavelength of 850 nm in TECHNICAL PHYSICS LETTERS
  • 2018-01 High-Speed Semiconductor Vertical-Cavity Surface-Emitting Lasers for Optical Data-Transmission Systems (Review) in TECHNICAL PHYSICS LETTERS
  • 2018-01 Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells in SEMICONDUCTORS
  • 2017-12 Peaking of Optical Pulses in Vertical-Cavity Surface-Emitting Lasers with an Active Region Based on Submonolayer InGaAs Quantum Dots in TECHNICAL PHYSICS LETTERS
  • 2017-11-03 Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors in SEMICONDUCTORS
  • 2017-10 Precision calibration of the silicon doping level in gallium arsenide epitaxial layers in TECHNICAL PHYSICS LETTERS
  • 2016-10-11 Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture in SEMICONDUCTORS
  • 2016-10 Laser generation at 1.3 μm in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping in TECHNICAL PHYSICS LETTERS
  • 2016-10 A study of distributed dielectric bragg reflectors for vertically emitting lasers of the near-IR range in TECHNICAL PHYSICS LETTERS
  • 2015-01-08 Study of high-speed semiconductor VCSELs based on AlInGaAs heterostructures with large gain-cavity detuning in SEMICONDUCTORS
  • 2014-12-02 Effect of the photon lifetime on the characteristics of 850-nm vertical-cavity surface-emitting lasers with fully doped distributed Bragg reflectors and an oxide current aperture in SEMICONDUCTORS
  • 2014-12 Precise calibration of thickness and composition of epitaxial AlGaAs heterostructures with vertical-cavity optical microresonators in TECHNICAL PHYSICS LETTERS
  • 2014-01-05 Degradation-robust 850-nm vertical-cavity surface-emitting lasers for 25Gb/s optical data transmission in SEMICONDUCTORS
  • 2013-07-06 Single-spatial-mode semiconductor VCSELs with a nonplanar upper dielectric DBR in SEMICONDUCTORS
  • 2013-06-10 Influence of optical losses on the dynamic characteristics of linear arrays of near-infrared vertical-cavity surface-emitting lasers in SEMICONDUCTORS
  • 2013-01-07 Optical anisotropy of InGaAs quantum dots in SEMICONDUCTORS
  • 2012-06-05 Radiation-induced surface degradation of GaAs and high electron mobility transistor structures in SEMICONDUCTORS
  • 2012-02 Decreasing parasitic capacitance in vertical-cavity surface-emitting laser with selectively oxidized aperture in TECHNICAL PHYSICS LETTERS
  • 2011-12-29 Submicron surface relief fabrication technology for epitaxial GaAs structures with thin AlGaAs stop layers in TECHNICAL PHYSICS LETTERS
  • 2011-10-07 Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures in SEMICONDUCTORS
  • 2011-06-18 Matrices of 960-nm vertical-cavity surface-emitting lasers in SEMICONDUCTORS
  • 2010-04 Wide-aperture detector of terahertz radiation based on GaAs/InGaAs transistor structure with large-area slit grating gate in TECHNICAL PHYSICS LETTERS
  • 2009-12-24 Generation of π modes in semiconductor vertical-cavity surface-emitting lasers in TECHNICAL PHYSICS LETTERS
  • 2007-10 The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots in SEMICONDUCTORS
  • 2007-04 Cathodoluminescence characteristics of pseudomorphic modulation-doped quantum well AlGaAs/InGaAs/AlGaAs heterostructures at high carrier densities and their radiation damaging in SEMICONDUCTORS
  • 2006-10 Experimental study of temperature dependence of threshold characteristics in semiconductor VCSELs based on submonolayer InGaAs QDs in SEMICONDUCTORS
  • 2006-09 Room-temperature 1.3-μm lasing in a microdisk with quantum dots in SEMICONDUCTORS
  • 2006-06 An X-ray diffraction and electron-microscopic study of the influence of gamma radiation on multilayer AlGaAs/InGaAs/GaAs heterostructures in SEMICONDUCTORS
  • 2006-05 VCSELs based on arrays of sub-monolayer InGaAs quantum dots in SEMICONDUCTORS
  • 2006-04-09 Optical studies of asymmetric-waveguide submonolayer InGaAs QD microdisks formed by selective oxidation in SEMICONDUCTORS
  • 2006-03 SEMICONDUCTOR-SUPERLATTICE FREQUENCY MIXER FOR DETECTION OF SUBMILLIMETER WAVES in JOURNAL OF INFRARED, MILLIMETER, AND TERAHERTZ WAVES
  • 2005-07 Stresses in selectively oxidized GaAs/(AlGa)xOy structures in SEMICONDUCTORS
  • 2005-04 Design and fabrication technology for arrays for vertical-cavity surface-emitting lasers in SEMICONDUCTORS
  • 2004-06 High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates in SEMICONDUCTORS
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