Valery Yu Davydov


Ontology type: schema:Person     


Person Info

NAME

Valery Yu

SURNAME

Davydov

Publications in SciGraph latest 50 shown

  • 2021-06 Modification of the Electronic Structure of Quasi-Free-Standing Graphene by the Adsorption and Intercalation of Mn Atoms in JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
  • 2020-12-04 Raman Studies of Graphene Films Grown on 4H-SiC Subjected to Deposition of Ni in SEMICONDUCTORS
  • 2020-12-04 Structural and Dynamical Properties of Short-Period GaN/AlN Superlattices: Experiment and Theory in SEMICONDUCTORS
  • 2020-11-04 State-of-the-art and prospects for intense red radiation from core–shell InGaN/GaN nanorods in SCIENTIFIC REPORTS
  • 2020-10-08 Formation of Iron Silicides Under Graphene Grown on the Silicon Carbide Surface in PHYSICS OF THE SOLID STATE
  • 2020-09-08 A Study of the Photoresponse in Graphene Produced by Chemical Vapor Deposition in SEMICONDUCTORS
  • 2020-03 Intercalation Synthesis of Cobalt Silicides under Graphene Grown on Silicon Carbide in PHYSICS OF THE SOLID STATE
  • 2019-12-23 Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC in SEMICONDUCTORS
  • 2019-11-06 Boson Peak Related to Ga Nanoclusters in AlGaN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy at Ga-Rich Conditions in SEMICONDUCTORS
  • 2019-10-01 Emission Properties of Heavily Doped Epitaxial Indium-Nitride Layers in SEMICONDUCTORS
  • 2019-08-07 Template Synthesis of Monodisperse Submicrometer Spherical Nanoporous Silicon Particles in SEMICONDUCTORS
  • 2019-08-07 Molecular-Beam Epitaxy of Two-Dimensional GaSe Layers on GaAs(001) and GaAs(112) Substrates: Structural and Optical Properties in SEMICONDUCTORS
  • 2019-08-02 InSe as a case between 3D and 2D layered crystals for excitons in NATURE COMMUNICATIONS
  • 2019-07-23 Cobalt Intercalation of Graphene on Silicon Carbide in PHYSICS OF THE SOLID STATE
  • 2018-12-27 High Quality Graphene Grown by Sublimation on 4H-SiC (0001) in SEMICONDUCTORS
  • 2018-07-18 Intercalation of Iron Atoms under Graphene Formed on Silicon Carbide in PHYSICS OF THE SOLID STATE
  • 2018-06-21 Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures in SCIENTIFIC REPORTS
  • 2018-05-15 Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers in SEMICONDUCTORS
  • 2018-05-09 Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes in SCIENTIFIC REPORTS
  • 2018-05 Local Anodic Oxidation of Graphene Layers on SiC in TECHNICAL PHYSICS LETTERS
  • 2018-04-17 Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on μ-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE in SEMICONDUCTORS
  • 2017-12-16 New luminescence lines in nanodiamonds obtained by chemical vapor deposition in PHYSICS OF THE SOLID STATE
  • 2017-12-08 Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen in SEMICONDUCTORS
  • 2017-09 Transport properties of graphene films grown by thermodestruction of SiC (0001) surface in argon medium in TECHNICAL PHYSICS LETTERS
  • 2017-08-25 Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001) in SEMICONDUCTORS
  • 2017-07-25 Lasing in microdisks with an active region based on lattice-matched InP/AlInAs nanostructures in TECHNICAL PHYSICS
  • 2017-01 On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire in SEMICONDUCTORS
  • 2016-12-17 Lattice dynamics and electronic structure of cobalt–titanium spinel Co2TiO4 in PHYSICS OF THE SOLID STATE
  • 2016-11-15 Resonance energy transfer in a dense array of II–VI quantum dots in PHYSICS OF THE SOLID STATE
  • 2016-08-02 Elastic strains and delocalized optical phonons in AlN/GaN superlattices in SEMICONDUCTORS
  • 2016-07-26 Transport properties of graphene in the region of its interface with water surface in PHYSICS OF THE SOLID STATE
  • 2016-07 Graphene-based biosensors in TECHNICAL PHYSICS LETTERS
  • 2016-05-15 On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates in SEMICONDUCTORS
  • 2016-03-31 Optical and Structural Properties of Composite Si:Au Layers Formed by Laser Electrodispersion in SEMICONDUCTORS
  • 2016-03 Supersensitive graphene-based gas sensor in TECHNICAL PHYSICS
  • 2015-12-11 III-nitride tunable cup-cavities supporting quasi whispering gallery modes from ultraviolet to infrared in SCIENTIFIC REPORTS
  • 2015-11-04 Temperature switching of cavity modes in InN microcrystals in SEMICONDUCTORS
  • 2015-10 The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy in TECHNICAL PHYSICS LETTERS
  • 2015-09-03 Photoluminescence Spectra of thin Zno films grown by ALD technology in PHYSICS OF THE SOLID STATE
  • 2015-04-29 Structure and composition of silicon microarrays subjected to cyclic insertion and extraction of lithium in TECHNICAL PHYSICS
  • 2014-05 Synthesis of GaN nano- and microwire crystals induced by a titanium nanolayer in TECHNICAL PHYSICS LETTERS
  • 2013-12-28 X-ray diffraction study of short-period AlN/GaN superlattices in CRYSTALLOGRAPHY REPORTS
  • 2013-12-28 Defects and stresses in MBE-grown GaN and Al0.3Ga0.7N layers doped by silicon using silane in CRYSTALLOGRAPHY REPORTS
  • 2013-08 Electron-beam modification of the parameters of the insulator-metal phase transition in vanadium dioxide films in TECHNICAL PHYSICS LETTERS
  • 2012-03 Photoemission studies of ultrathin Cs, Ba/InN interfaces in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2011-07-10 Specific features of Raman spectra of III–V nanowhiskers in PHYSICS OF THE SOLID STATE
  • 2010-02 Resonant raman scattering and dispersion of polar optical and acoustic phonons in hexagonal inn in SEMICONDUCTORS
  • 2008-12-17 Surface states on the n-InN-electrolyte interface in SEMICONDUCTORS
  • 2008-05 Formation and decomposition of nitrides under ion bombardment in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2007-01 Compositional fluctuations in isotopic solid solutions in PHYSICS OF THE SOLID STATE
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