Alexander A Lebedev


Ontology type: schema:Person     


Person Info

NAME

Alexander A

SURNAME

Lebedev

Publications in SciGraph latest 50 shown

  • 2018-12 Transition between Electron Localization and Antilocalization and Manifestation of the Berry Phase in Graphene on a SiC Surface in SEMICONDUCTORS
  • 2018-12 Electrical Properties of GaAs Nanowires Grown on Graphene/SiC Hybrid Substrates in SEMICONDUCTORS
  • 2018-12 High Quality Graphene Grown by Sublimation on 4H-SiC (0001) in SEMICONDUCTORS
  • 2018-12 Radiation-Induced Damage of Silicon-Carbide Diodes by High-Energy Particles in SEMICONDUCTORS
  • 2018-12 Galvanic and Capacitive Effects in n-SiC Conductivity Compensation by Radiation-Induced Defects in SEMICONDUCTORS
  • 2018-11 MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer in SEMICONDUCTORS
  • 2018-07 Electron-Diffraction Study of the Structure of Epitaxial Graphene Grown by the Method of Thermal Destruction of 6H- and 4H-SiC (0001) in Vacuum in PHYSICS OF THE SOLID STATE
  • 2018-07 Intercalation of Iron Atoms under Graphene Formed on Silicon Carbide in PHYSICS OF THE SOLID STATE
  • 2018-05 Local Anodic Oxidation of Graphene Layers on SiC in TECHNICAL PHYSICS LETTERS
  • 2018-03 Radiation Resistance of Devices Based on SiC in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2018-03 Formation of Radiation Defects by Proton Braking in Lightly Doped n- and p-SiC Layers in SEMICONDUCTORS
  • 2017-11 A study of the effect of electron and proton irradiation on 4H-SiC device structures in TECHNICAL PHYSICS LETTERS
  • 2017-10 Field effects in graphene in an interface contact with aqueous solutions of acetic acid and potassium hydroxide in PHYSICS OF THE SOLID STATE
  • 2017-09 Radiation resistance of 4H-SiC Schottky diodes under irradiation with 0.9-MeV electrons in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2017-09 Transport properties of graphene films grown by thermodestruction of SiC (0001) surface in argon medium in TECHNICAL PHYSICS LETTERS
  • 2017-08 Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001) in SEMICONDUCTORS
  • 2017-08 Effects of irradiation with 8-MeV protons on n-3C-SiC heteroepitaxial layers in SEMICONDUCTORS
  • 2017-03 Effect of the energy of bombarding electrons on the conductivity of n-4H-SiC (CVD) epitaxial layers in SEMICONDUCTORS
  • 2016-12 Development of a spinodal decomposition model for the example of a heterostructure based on silicon carbide polytypes in TECHNICAL PHYSICS LETTERS
  • 2016-07 Electron-diffraction study of graphene-film growth stages during the thermal destruction of 6H-SiC (000) in vacuum in SEMICONDUCTORS
  • 2016-07 Transport properties of graphene in the region of its interface with water surface in PHYSICS OF THE SOLID STATE
  • 2016-07 Graphene-based biosensors in TECHNICAL PHYSICS LETTERS
  • 2016-07 Effect of recoil atoms on radiation-defect formation in semiconductors under 1–10-MeV proton irradiation in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2016-03 Supersensitive graphene-based gas sensor in TECHNICAL PHYSICS
  • 2015-12 On the relationship between radiation-stimulated photoluminescence and nitrogen atoms in p-4H-SiC in TECHNICAL PHYSICS LETTERS
  • 2015-12 Fabrication of quasi-superlattices at the interface between 3C-SiC epitaxial layer and substrates of hexagonal SiC polytypes by sublimation epitaxy in vacuum in TECHNICAL PHYSICS LETTERS
  • 2015-10 Radiation hardness of n-GaN schottky diodes in SEMICONDUCTORS
  • 2015-09 Effect of irradiation with MeV protons and electrons on the conductivity compensation and photoluminescence of moderately doped p-4H-SiC (CVD) in SEMICONDUCTORS
  • 2015-04 Irradiation of 4H-SiC UV detectors with heavy ions in SEMICONDUCTORS
  • 2015-03 Role of the recoil atom energy in the formation of radiation-induced defects in semiconductors under electron bombardment in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2015-01 On the electronic state of an atom adsorbed on epitaxial graphene formed on metallic and semiconductor substrates in PHYSICS OF THE SOLID STATE
  • 2014-12 Evaluation of the effect of adsorption on the conductivity of single-layer graphene formed on a semiconductor substrate in PHYSICS OF THE SOLID STATE
  • 2014-10 Comparison of the radiation hardness of silicon and silicon carbide in SEMICONDUCTORS
  • 2014-09 Nonlinear effects in semiconductor-conductivity compensation by radiation defects in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2014-08 Irradiation of sublimation-grown p-SiC with 0.9-MeV electrons in TECHNICAL PHYSICS LETTERS
  • 2014-08 Conductivity compensation in n-4H-SiC (CVD) under irradiation with 0.9-MeV electrons in SEMICONDUCTORS
  • 2014-06 On the possibility of spinodal decomposition in the transition layer of a heterostructure based on silicon-carbide polytypes in SEMICONDUCTORS
  • 2014-03 On the self-structuring of single-crystal silicon wafers under inductive heating in vacuum in SEMICONDUCTORS
  • 2013-11 Investigation of the transition layer in 3C-SiC/6H-SiC heterostructures in SEMICONDUCTORS
  • 2013-09 Comparative study of 3C-SiC layers sublimation-grown on a 6H-SiC substrate in SEMICONDUCTORS
  • 2013-02 Structure and transport properties of nanocarbon films prepared by sublimation on a 6H-SiC surface in SEMICONDUCTORS
  • 2012-10 Annealing of radiation-compensated silicon carbide in TECHNICAL PHYSICS LETTERS
  • 2012-07 On the possibility of the experimental determination of spontaneous polarization for silicon carbide polytypes in SEMICONDUCTORS
  • 2012-04 Radiation resistance of wide-gap materials as exemplified by SiC nuclear radiation detectors in TECHNICAL PHYSICS
  • 2012-04 Similarities and distinctions of defect production by fast electron and proton irradiation: Moderately doped silicon and silicon carbide of n-type in SEMICONDUCTORS
  • 2011-10 On the problem of the radiation hardness of SiC nuclear radiation detectors at high working temperatures in SEMICONDUCTORS
  • 2011-09 Conductivity compensation in p-6H-SiC in irradiation with 8-MeV protons in SEMICONDUCTORS
  • 2011-06 Vacancy model of micropipe annihilation in epitaxial silicon carbide layers in SEMICONDUCTORS
  • 2011-06 Fabrication of improved-quality seed crystals for growth of bulk silicon carbide in SEMICONDUCTORS
  • 2011-05 Low-temperature transport properties of multigraphene films grown on the SiC surface by sublimation in SEMICONDUCTORS
  • Affiliations

  • Ioffe Institute (current)
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