S I Troshkov


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Person Info

NAME

S I

SURNAME

Troshkov

Publications in SciGraph latest 50 shown

  • 2018-12 Features of the Selective Growth of GaN Nanorods on Patterned c-Sapphire Substrates of Various Configurations in SEMICONDUCTORS
  • 2018-12 Low Threshold Lasing in InP/GaInP Quantum Dot Microdisks in SEMICONDUCTORS
  • 2018-05 Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands in SEMICONDUCTORS
  • 2017-09 Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range in SEMICONDUCTORS
  • 2017-07 Lasing in microdisks with an active region based on lattice-matched InP/AlInAs nanostructures in TECHNICAL PHYSICS
  • 2017-01 InGaN/GaN light-emitting diode microwires of submillimeter length in SEMICONDUCTORS
  • 2016-11 Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel in TECHNICAL PHYSICS LETTERS
  • 2016-10 Laser generation at 1.3 μm in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping in TECHNICAL PHYSICS LETTERS
  • 2016-10 Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency in SEMICONDUCTORS
  • 2016-10 Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture in SEMICONDUCTORS
  • 2016-10 A study of distributed dielectric bragg reflectors for vertically emitting lasers of the near-IR range in TECHNICAL PHYSICS LETTERS
  • 2016-06 Solar-blind AlxGa1–xN (x > 0.45) p–i–n photodiodes with a polarization-p-doped emitter in TECHNICAL PHYSICS LETTERS
  • 2016-04 The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy in TECHNICAL PHYSICS LETTERS
  • 2016-03 Microdisk Injection Lasers for the 1.27-μm Spectral Range in SEMICONDUCTORS
  • 2015-10 The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy in TECHNICAL PHYSICS LETTERS
  • 2015-09 Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN in PHYSICS OF THE SOLID STATE
  • 2015-07 The effect of sulfide passivation on luminescence from microdisks with quantum wells and quantum dots in TECHNICAL PHYSICS LETTERS
  • 2015-05 Thermal resistance of ultra-small-diameter disk microlasers in SEMICONDUCTORS
  • 2014-05 Synthesis of GaN nano- and microwire crystals induced by a titanium nanolayer in TECHNICAL PHYSICS LETTERS
  • 2013-07 Single-spatial-mode semiconductor VCSELs with a nonplanar upper dielectric DBR in SEMICONDUCTORS
  • 2013-04 Growth specifics of GaAs nanowires in mesa in PHYSICS OF THE SOLID STATE
  • 2013-03 Influence of the carrier Gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN in SEMICONDUCTORS
  • 2013-02 Determination of the thickness and spectral dependence of the refractive index of AlxIn1 − xSb epitaxial layers from reflectance spectra in SEMICONDUCTORS
  • 2012-08 High-temperature lasing in a microring laser with an active region based on InAs/InGaAs quantum dots in SEMICONDUCTORS
  • 2012-03 Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide in TECHNICAL PHYSICS LETTERS
  • 2012-03 Double-cross epitaxial overgrowth of nonpolar gallium nitride layers in TECHNICAL PHYSICS LETTERS
  • 2012-02 Decreasing parasitic capacitance in vertical-cavity surface-emitting laser with selectively oxidized aperture in TECHNICAL PHYSICS LETTERS
  • 2011-08 Specific features of gallium nitride selective epitaxy in round windows in TECHNICAL PHYSICS LETTERS
  • 2011-01-22 Technology of Cavity Fabrication for Whispering Gallery Modes Laser (m) in TERAHERTZ AND MID INFRARED RADIATION
  • 2010-07 Structural and optical properties of InAlN/GaN distributed Bragg reflectors in SEMICONDUCTORS
  • 2010-07 Interference of emission from disk-shaped lasers based on quantum-confined AlGaAsSb/InGaAsSb nanoheterostructures in TECHNICAL PHYSICS LETTERS
  • 2009-07 Properties of GaAsN nanowires grown by magnetron-sputtering deposition in SEMICONDUCTORS
  • 2008-11 InGaAlN heterostructures for LEDs grown on patterned sapphire substrates in TECHNICAL PHYSICS LETTERS
  • 2000-01 Visualization of the ion projected range region in GaAs irradiated with argon ions in TECHNICAL PHYSICS LETTERS
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