I S Tarasov


Ontology type: schema:Person     


Person Info

NAME

I S

SURNAME

Tarasov

Publications in SciGraph latest 50 shown

  • 2018-02 Oxygen Nitrogen Mixture Effect on Aluminum Nitride Synthesis by Reactive Ion Plasma Deposition in SEMICONDUCTORS
  • 2017-09 Polarization effects in quantum-well In28Ga72As/GaAs heterolasers in PHYSICS OF THE SOLID STATE
  • 2017-09 Structural and optical studies of thin films of aluminum nitride grown via ion-plasma sputtering on gallium arsenide substrates with different orientations in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2017-07 Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers in SEMICONDUCTORS
  • 2017-01 All-optical modulator cells based on AlGaAs/GaAs/InGaAs 905-nm laser heterostructures in TECHNICAL PHYSICS LETTERS
  • 2017-01 Epitaxial AlxGa1 – xAs:Mg alloys with different conductivity types in SEMICONDUCTORS
  • 2016-10 Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K) in SEMICONDUCTORS
  • 2016-10 Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 μm in SEMICONDUCTORS
  • 2016-09 On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions in SEMICONDUCTORS
  • 2016-09 Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates in SEMICONDUCTORS
  • 2016-07 Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium in SEMICONDUCTORS
  • 2016-06 Narrowing of the emission spectra of high-power laser diodes with a volume Bragg grating recorded in photo-thermo-refractive glass in SEMICONDUCTORS
  • 2016-05 Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers in SEMICONDUCTORS
  • 2015-11 Comparative analysis of the effects of electron and hole capture on the power characteristics of a semiconductor quantum-well laser in SEMICONDUCTORS
  • 2015-11 Lasing of multiperiod quantum-cascade lasers in the spectral range of (5.6–5.8)-μm under current pumping in SEMICONDUCTORS
  • 2015-10 Properties of AlN films deposited by reactive ion-plasma sputtering in SEMICONDUCTORS
  • 2015-09 Mapping of laser diode radiation intensity by atomic-force microscopy in TECHNICAL PHYSICS LETTERS
  • 2015-08 Optical-cell model based on the lasing competition of mode structures with different Q-factors in high-power semiconductor lasers in SEMICONDUCTORS
  • 2015-08 AlxGa1 − xAs/GaAs(100) hetermostructures with anomalously high carrier mobility in SEMICONDUCTORS
  • 2015-07 Investigations of nanodimensional Al2O3 films deposited by ion-plasma sputtering onto porous silicon in SEMICONDUCTORS
  • 2015-03 Suppressing the process of charge carrier delocalization in high-power pulse-pumped semiconductor lasers in TECHNICAL PHYSICS LETTERS
  • 2015-02 Raman and photoluminescent spectroscopy of epitaxial heterostructures based on AlxGa1 − xAs1 − yPy solid solutions heavily doped with silicon and magnesium in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2015-02 Optical investigation of ultrathin Al2O3 films grown on GaAs(100) substrates in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2014-11 Structure and optical properties of thin Al2O3 films deposited by the reactive ion-plasma sputtering method on GaAs (100) substrates in SEMICONDUCTORS
  • 2014-10 On the temperature delocalization of carriers in GaAs/AlGaAs/InGaAs quantum-well heterostructures in SEMICONDUCTORS
  • 2014-08 Structural and optical properties of heavily doped AlxGa1 − xAs1 − yPy:Mg alloys produced by metal-organic chemical vapor deposition in SEMICONDUCTORS
  • 2014-05 Analysis of the emission efficiency of powerful semiconductor lasers under closed-mode threshold lasing conditions in SEMICONDUCTORS
  • 2014-05 On the control efficiency of a high-power laser thyristor emitting in the 890–910 nm spectral range in SEMICONDUCTORS
  • 2014-05 Multi-wavelength integrated optical-laser emission modulator based on semiconductor heterostructures in SEMICONDUCTORS
  • 2014-03 Laser-diode bars based on AlGaAsP/GaAs heterostructures emitting at a wavelength of 850 nm in SEMICONDUCTORS
  • 2013-10 Photoluminescence properties of heavily doped heterostructures based on (AlxGa1 − xAs)1 − ySiy solid solutions in PHYSICS OF THE SOLID STATE
  • 2013-10 X-ray diffraction studies of heterostructures based on solid solutions AlxGa1 − xAsyP1 − y: Si in PHYSICS OF THE SOLID STATE
  • 2013-08 AlGaAs/GaAs diode lasers (1020–1100 nm) with an asymmetric broadened single transverse mode waveguide in SEMICONDUCTORS
  • 2013-08 850-nm diode lasers with different ways of compensating for internal mechanical stresses in an AlGaAs:P/GaAs heterostructure in SEMICONDUCTORS
  • 2013-04 Semiconductor InGaAs/GaAs injection lasers with waveguides based on a single quantum well in TECHNICAL PHYSICS LETTERS
  • 2013-01 Semiconductor lasers with internal wavelength selection in SEMICONDUCTORS
  • 2012-10 850-nm diode lasers based on AlGaAsP/GaAs heterostructures in SEMICONDUCTORS
  • 2012-10 Radiative and nonradiative recombination in the active layers of high-power InGaAs/GaAs/AlGaAs laser diodes in SEMICONDUCTORS
  • 2012-09 Temperature dependence of the threshold current density in semiconductor lasers (λ = 1050–1070 nm) in SEMICONDUCTORS
  • 2012-09 Thermal delocalization of carriers in semiconductor lasers (λ = 1010–1070 nm) in SEMICONDUCTORS
  • 2012-08 Effect of the number of quantum wells in the active region on the linearity of the light-current characteristic of a semiconductor laser in SEMICONDUCTORS
  • 2012-06 Structural and spectral features of MOCVD AlxGayIn1 − x − yAszP1 − z/GaAs (100) alloys in SEMICONDUCTORS
  • 2012-03 Temperature dependence of the contact resistance of ohmic contacts to III–V compounds with a high dislocation density in SEMICONDUCTORS
  • 2012-02 High-order diffraction gratings for high-power semiconductor lasers in SEMICONDUCTORS
  • 2012-01 Diagnostics of semiconductor structures by means of an apertureless near-field terahertz microscope in RADIOPHYSICS AND QUANTUM ELECTRONICS
  • 2011-11 Capture of charge carriers and output power of a quantum well laser in SEMICONDUCTORS
  • 2011-11 Spinodal Decomposition of GaxIn1−xAsyP1−yQuaternary Alloys in SEMICONDUCTORS
  • 2011-10 Diode lasers emitting at 1220 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate in SEMICONDUCTORS
  • 2011-10 Analysis of quenching conditions of Fabry-Perot mode lasing in semiconductor stripe-contact lasers in SEMICONDUCTORS
  • 2011-09 Diode lasers emitting at 1190 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate in SEMICONDUCTORS
  • Affiliations

  • Ioffe Institute (current)
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