S O Usov


Ontology type: schema:Person     


Person Info

NAME

S O

SURNAME

Usov

Publications in SciGraph latest 50 shown

  • 2018-12 Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs in SEMICONDUCTORS
  • 2018-10 Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography in SEMICONDUCTORS
  • 2017-01 InGaN/GaN light-emitting diode microwires of submillimeter length in SEMICONDUCTORS
  • 2016-10 effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis in SEMICONDUCTORS
  • 2016-09 Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs in SEMICONDUCTORS
  • 2015-11 Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency in SEMICONDUCTORS
  • 2014-01 Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers in SEMICONDUCTORS
  • 2012-10 InGaN/GaN heterostructures grown by submonolayer deposition in SEMICONDUCTORS
  • 2012-10 Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region in SEMICONDUCTORS
  • 2011-02 Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them in SEMICONDUCTORS
  • 2010-11 High-efficiency InGaN/GaN/AlGaN light-emitting diodes with short-period InGaN/GaN superlattice for 530–560 nm range in TECHNICAL PHYSICS LETTERS
  • 2010-10 Formation of composite InGaN/GaN/InAlN quantum dots in SEMICONDUCTORS
  • 2010-07 Structural and optical properties of InAlN/GaN distributed Bragg reflectors in SEMICONDUCTORS
  • 2010-06 A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices in SEMICONDUCTORS
  • 2010-06 Optical and structural properties of InGaN/GaN short-period superlattices for the active region of light- emitting diodes in SEMICONDUCTORS
  • 2010-01 Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes in SEMICONDUCTORS
  • 2010-01 Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes in SEMICONDUCTORS
  • 2009-08 Optical and X-ray diffraction studies of multilayer structures based on InGaN/GaN solid solutions in PHYSICS OF THE SOLID STATE
  • 2009-06 Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs in SEMICONDUCTORS
  • 2008-06 Energy characteristics of excitons in structures based on InGaN alloys in SEMICONDUCTORS
  • 2008-02 Photoluminescence of localized excitons in InGan quantum dots in SEMICONDUCTORS
  • 2004-04 Carrier density profile in weakly coupled GaAs/AlGaAs superlattices in SEMICONDUCTORS
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