M A Sipovskaya

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Publications in SciGraph latest 50 shown

  • 2011-03 Analysis of spatial modes in half-disk lasers based on AlGaAsSb/InGaAsSb quantum well nanoheterostructures in SEMICONDUCTORS
  • 2010-07 Interference of emission from disk-shaped lasers based on quantum-confined AlGaAsSb/InGaAsSb nanoheterostructures in TECHNICAL PHYSICS LETTERS
  • 2010-04 Frequency tuning due to nonlinear effects in whispering gallery mode laser based on InAsSb/InAsSbP heterostructure in TECHNICAL PHYSICS LETTERS
  • 2009-12-24 Visual observation of frequency tuning in whispering gallery mode diode laser at room temperature in TECHNICAL PHYSICS LETTERS
  • 2009-09 Frequency-tuned semiconductor whispering-gallery-mode laser (λ = 2.35 µm) operating at room temperature in TECHNICAL PHYSICS LETTERS
  • 2009-01 Photodiodes based on n-GaSb/n-GaInAsSb/p-AlGaAsSb heterostructures grown using rare-earth elements for the 1.1–2.4 μm spectral range in TECHNICAL PHYSICS LETTERS
  • 2008-10-28 Ultrafast frequency tuning in diode lasers based on InAsSb/InAsSbP heterostructures operating in the 3–4 μm spectral range in TECHNICAL PHYSICS LETTERS
  • 2008-04 Low-noise photodiodes based on GaSb/GaInAsSb/AlGaAsSb double heterostructures for the 1–4.8 μm spectral range in SEMICONDUCTORS
  • 2007-10 Improving parameters of GaSb/GaInAsSb/AlGaAsSb photodiode structures with thin active regions for the 1.0–2.5 μm wavelength range in TECHNICAL PHYSICS LETTERS
  • 2007-01 Long-wavelength photodiodes based on n-GaSb/n-GaInAsSb/p-AlGaAsSb heterostructures in TECHNICAL PHYSICS LETTERS
  • 2005-03 The effect of tellurium diffusion from an n-GaSb:Te substrate on the properties of GaInAsSb solid solutions grown from lead-containing melt in SEMICONDUCTORS
  • 2005-03 High-efficiency LEDs based on GaInAsSb solid solutions with reduced arsenic content in the active region in TECHNICAL PHYSICS LETTERS
  • 2004-11 Properties of GaSb-based LEDs with grid ohmic contacts in SEMICONDUCTORS
  • 2004-06 Transformation of a short-wavelength emission band of a double-charged intrinsic acceptor into a long-wavelength band in GaSb-based LEDs in SEMICONDUCTORS
  • 2002-08 Influence of tellurium impurity on the Properties of Ga1−XInXAsYSb1−Y (X>0.22) solid solutions in SEMICONDUCTORS
  • 1999-07 Electrical properties of epitaxial indium arsenide and narrow band solid solutions based on it in SEMICONDUCTORS
  • 1999-05 AlGaAsSb lasers emitting in the 1.6 μm region in TECHNICAL PHYSICS LETTERS
  • 1999-02 High-power light-emitting diodes operating in the 1.9 to 2.1-µm spectral range in SEMICONDUCTORS
  • 1998-03 Electrical properties of GaSb-based solid solutions (GaInAsSb, GaAlSb, GaAlAsSb) and their compositional dependence in SEMICONDUCTORS
  • 1997-08 Electronic transport in a type-II GaInAsSb/p-InAs heterojunction with different doping levels of the solid solution in SEMICONDUCTORS
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