James L Merz


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Person Info

NAME

James L

SURNAME

Merz

Publications in SciGraph latest 50 shown

  • 2018-04-03 Density Control of InP/GaInP Quantum Dots Grown by Metal-Organic Vapor-Phase Epitaxy in SEMICONDUCTORS
  • 2018-04-03 Wigner Localization and Whispering Gallery Modes of Electrons in Quantum Dots in SEMICONDUCTORS
  • 2017-07-25 Lasing in microdisks with an active region based on lattice-matched InP/AlInAs nanostructures in TECHNICAL PHYSICS
  • 2010-12-30 Study of tunneling transport of carriers in structures with an InGaN/GaN active region in SEMICONDUCTORS
  • 2010-07-22 The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes in SEMICONDUCTORS
  • 2010-02-24 Self-Assembled CdTe Quantum Dots Grown on ZnTe/GaSb in JOURNAL OF ELECTRONIC MATERIALS
  • 2005-01 Near-field photoluminescence spectroscopy of InGaN quantum dots. in MRS ADVANCES
  • 2004 Near-Field Scanning Optical Microscopy of Phase Separation Effects in Dilute Nitride Alloys. in MRS ADVANCES
  • 2003-12 Fabrication and optical properties of photonic crystals based on opal-GaP and opal-GaPN composites in SEMICONDUCTORS
  • 2003 Near-Field Magneto-Photoluminescence of Singe Self-Organized Quantum Dots. in MRS ADVANCES
  • 2003 Near-Field Magneto-Photoluminescence of Singe Self-Organized Quantum Dots. in MRS ADVANCES
  • 2003 Near-Field Magneto-Photoluminescence of Singe Self-Organized Quantum Dots. in MRS ADVANCES
  • 2002 Local Strain Effects in Near-Field Spectra of Single Semiconductor Quantum Dots. in MRS ADVANCES
  • 2002 Mechanical Interaction in Near-Field Spectroscopy of single Semiconductor Quantum Dots. in MRS ADVANCES
  • 2001-05 Growth and characterizations of InP self-assembled quantum dots embedded in InAIP grown on GaAs substrates in JOURNAL OF ELECTRONIC MATERIALS
  • 2001 Near-field photoluminescence spectroscopy of localized states in InGaAsN alloys in MRS ADVANCES
  • 2000 Strong Photon-Exciton Coupling in the Near-Field Luminescence of Semiconductor Quantum Dots in MRS ADVANCES
  • 2000 Infrastructure Needs for R&D and Education in NANOTECHNOLOGY RESEARCH DIRECTIONS: IWGN WORKSHOP REPORT
  • 1999-09 Optical spectra of wide band gap BexZn1−xSe alloys in SEMICONDUCTORS
  • 1999 Lateral Coupling of Self-Assembled Quantum Dots Studied by Near-Field Spectroscopy in MRS ADVANCES
  • 1999 Disorder Induced IR Anomaly in Hexagonal AlGaN Short-Period Superlattices and Alloys in MRS ADVANCES
  • 1996-05 Impurity-induced disordering of AIGalnAs quantum wells by low temperature Zn diffusion in JOURNAL OF ELECTRONIC MATERIALS
  • 1994-06 Two electron transitions of the exciton bound at the Si Donor confined in GaAs/AlxGa1-xAs quantum wells in JOURNAL OF ELECTRONIC MATERIALS
  • 1994-03 CdZnSe/ZnSe strained layer superlattices disordered by germanium diffusion in JOURNAL OF ELECTRONIC MATERIALS
  • 1994-02 Impurity induced disordering of OMVPE-grown ZnSe/ZnS strained layer superlattices by germanium diffusion in JOURNAL OF ELECTRONIC MATERIALS
  • 1994 The Interaction of Photoexcited e-h Pairs with a two Dimensional Electron Gas Studied by Intersubband Spectroscopy in QUANTUM WELL INTERSUBBAND TRANSITION PHYSICS AND DEVICES
  • 1994 Optical Properties of Self-Organizing Quantum-Dot Structures in NANOSTRUCTURES AND QUANTUM EFFECTS
  • 1993-11 Radiative recombination in modulation-doped GaAs/AlGaAs heterostructures in the presence of an electric field in JOURNAL OF ELECTRONIC MATERIALS
  • 1993 Growth and In-Situ Processing of Low Dimensional Quantum Structures in ATOMIC AND NANOMETER-SCALE MODIFICATION OF MATERIALS: FUNDAMENTALS AND APPLICATIONS
  • 1993 Optical Spectroscopy of Defects in GaAs/AlGaAs Multiple Quantum Wells. in MRS ADVANCES
  • 1993-01 Investigation of Bi-Exciton Formation in Doped GaAsAlxGa(1-x)as Quantum Wells in MRS ADVANCES
  • 1993-01 Luminescence Study for Band Discontinuity in Free-Standing CdZnS/ZnS Strained Layer Multi-Quantum Wells in MRS ADVANCES
  • 1993 Magnetooptical Studies of Acceptors Confined in GaAs/AIGaAs Quantum Wells in MRS ADVANCES
  • 1992 tudy of the Surface Cleaning Effects to the InGaAs Quantum Well Wires by Atomic Force Microscopy and Photoluminescence Spectroscopy in MRS ADVANCES
  • 1991 Photoluminescence Study of Li-implantation into ZnSe Epitaxial Layers Grown by Molecular Beam Epitaxy in MRS ADVANCES
  • 1991 High Performance Quantum Well Asymmetric Fabry-Perot Reflection Modulators: Effect of Layer Thickness Variations in MRS ADVANCES
  • 1991 Molecular Beam Epitaxial Growth of (Al,Ga)As Tilted Superlattices on Vicinal GaAs (110) in MRS ADVANCES
  • 1991 Epitaxial Growth of GaAs-AIGaAs Quantum Wire Superlattices on Vicinal Surfaces. in MRS ADVANCES
  • 1991 P-type Conduction in Bulk ZnSe by Nitrogen Ion-Implantation in MRS ADVANCES
  • 1989 Hot-Carrier Effects on Optical Properties of GaAs/AlxGai1-xAs Quantum Wells in MRS ADVANCES
  • 1989 Ion-Implantation Getiering of Impurities in CdTe in MRS ADVANCES
  • 1989 Effects of Confinement on the Optical Properties of a Shallow Acceptor and its Bound Exciton in Narrow GaAs/AIGaAs Quantum Wells in MRS ADVANCES
  • 1989 Intrinsic Luminescence of GaAs/AIGaAs Heterojunctions in a Transverse Electric Field in MRS ADVANCES
  • 1989 Time Resolved Measurements of Radiative Recombination in GaAs/AIGaAs Heterostructures in MRS ADVANCES
  • 1989 Decay Measurements of Free and Bound Exciton Recombination in Doped GaAs/GaAIAs Quantum Wells in MRS ADVANCES
  • 1988 Focused Ion Beam Implantation of GaAs-GaAlAs Quantum Well Structures in MRS ADVANCES
  • 1987-07 Rapid thermal alloyed ohmic contact on inp in JOURNAL OF ELECTRONIC MATERIALS
  • 1986 The Effect of Implantation and Annealing Conditions on the Fe Profile in Semi-Insulating InP. in MRS ADVANCES
  • 1986 Effect of Si Implantation and Rapid Thermal Annealing on GaAs/AlGaAs Superlattice Disordering. in MRS ADVANCES
  • 1985 Rapid Thermal Anneal and Furnace Anneal of Silicon and Beryimlum Implanted Gallium Arsenide in MRS ADVANCES
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