Victor A Solov'Ev


Ontology type: schema:Person     


Person Info

NAME

Victor A

SURNAME

Solov'Ev

Publications in SciGraph latest 50 shown

  • 2021-01 Distribution of Misfit Dislocations and Elastic Mechanical Stresses in Metamorphic Buffer InAlAs Layers of Various Constructions in PHYSICS OF THE SOLID STATE
  • 2019-12 The Study of Nanoindentation of Atomically Flat GaAs Surface using the Tip of Atomic-Force Microscope in SEMICONDUCTORS
  • 2019-09 Stimulated Emission at a Wavelength of 2.86 μm from In(Sb, As)/In(Ga, Al)As/GaAs Metamorphic Quantum Wells under Optical Pumping in JETP LETTERS
  • 2019-03 Effect of Strongly Mismatched GaAs and InAs Inserts in a InAlAs Buffer Layer on the Structural and Optical Properties of Metamorphic InAs(Sb)/InGaAs/InAlAs/GaAs Quantum-Confined Heterostructures in JETP LETTERS
  • 2018-03-27 Contactless Measurement of Electron Concentration in Undoped Homoepitaxial InSb Layers in JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS
  • 2018-01 Optimization of the Structural Properties and Surface Morphology of a Convex-Graded InxAl1–xAs (x = 0.05–0.83) Metamorphic Buffer Layer Grown via MBE on GaAs (001) in SEMICONDUCTORS
  • 2016-12-17 Photoreflectance of indium antimonide in PHYSICS OF THE SOLID STATE
  • 2016-10 Metamorphic InAs/InGaAs/InAlAs quantum wells with submonolayer InSb insertions emitted in the mid-infrared spectral range in TECHNICAL PHYSICS LETTERS
  • 2014-03-07 Peculiarities of the electrophysical properties of InSb/AlInSb/AlSb heterostructures with a high electron concentration in the two-dimensional channel in SEMICONDUCTORS
  • 2011-11 Optical Properties of Epitaxial AlxIn1−xSb Alloy Layers in SEMICONDUCTORS
  • 2011-10-07 Features of molecular-beam epitaxy and structural properties of AlInSb-based heterostructures in SEMICONDUCTORS
  • 2010-08-18 Study of photoluminescence and electroluminescence mechanisms in quantum-confined InSb/InAs heterostructures in SEMICONDUCTORS
  • 2010-05-09 Molecular beam epitaxy of thermodynamically metastable GaInAsSb alloys for medium IR-range photodetectors in SEMICONDUCTORS
  • 2010-02 Spin injection in GaAs/GaSb quantum-well heterostructures in SEMICONDUCTORS
  • 2009-05-06 Anomalous spin splitting of electrons in type-II InSb quantum dots in InAs in SEMICONDUCTORS
  • 2008-01-01 Antimony Distribution in the InSb/InAs QD Heterostructures in NARROW GAP SEMICONDUCTORS 2007
  • 2008-01-01 InSb/InAs Nanostructures Grown by Molecular Beam Epitaxy Using Sb2 and As2 Fluxes in NARROW GAP SEMICONDUCTORS 2007
  • 2008-01 In situ study of the formation kinetics of InSb quantum dots grown in an InAs(Sb) matrix in SEMICONDUCTORS
  • 2007-11 Large-magnitude spin polarization of electrons in an InAs-based diode structure in SEMICONDUCTORS
  • 2007-05 Anomalous electron spin splitting in InAs pumped by injection in SEMICONDUCTORS
  • 2007-01 InSb/InAsSb nanostructures for Mid-IR optoelectronics in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2005-03 Midinfrared injection-pumped laser based on a III–V/II–VI hybrid heterostructure with submonolayer InSb insets in TECHNICAL PHYSICS LETTERS
  • 2005-02 Process of fabricating semiconductor microcavities and photon crystals in TECHNICAL PHYSICS
  • 2004-03 Special features of Sb2 and Sb4 incorporation in MBE-grown AlGaAsSb alloys in SEMICONDUCTORS
  • 2003-06 Mid-infrared (λ=2.775 µm) injection laser based on AlGaAsSb/InAs/CdMgSe hybrid double heterostructure grown by molecular-beam epitaxy in SEMICONDUCTORS
  • 2003-04 3C-SiC p-n structures grown by sublimation on 6H-SiC substrates in SEMICONDUCTORS
  • 2002-12 MBE growth and photoluminescent properties of InAsSb/AlSbAs quantum wells in SEMICONDUCTORS
  • 2002-07 GaAs in GaSb: Strained nanostructures for mid-infrared optoelectronics in SEMICONDUCTORS
  • 2002-04 Far infrared electroluminescence in cascade type-II heterostructures in JETP LETTERS
  • 2001-04 Structural, luminescent, and transport properties of hybrid AlAsSb/InAs/Cd(Mg)Se heterostructures grown by molecular beam epitaxy in SEMICONDUCTORS
  • 2001 Photoluminescence and atomic force microscopy studies of InAs/InSb nanostructures grown by MBE in PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS PART I
  • 2001 Asymmetric Hybrid Al(Ga)SbAs/InAs/Cd(Mg)Se Heterostructures for Mid-IR LEDS and Lasers in MRS ADVANCES
  • 1999-11 Formation of a protective film on a copper friction surface in the presence of fullerene C60 in TECHNICAL PHYSICS
  • 1999-08 Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface in SEMICONDUCTORS
  • 1999 GaN p-n Structures Fabricated by Mg Ion Implantation in MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
  • 1998-11 Scanning electron microscopy of long-wavelength laser structures in SEMICONDUCTORS
  • 1998-06 Electroluminescence of quantum-well structures on type-II InAs/GaSb heterojunctions in TECHNICAL PHYSICS LETTERS
  • 1998 GaN P-N Structures Fabricated by Mg ION Implantation in MRS ADVANCES
  • 1997-04 Investigation of carrier transport in a system of undoped quantum wells under pulsed excitation in SEMICONDUCTORS
  • 1997-03 New potential applications of scanning electron microscopy to studying InAsSb/InAsSbP lasers in TECHNICAL PHYSICS LETTERS
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