Ekaterina V Kunitsyna


Ontology type: schema:Person     


Person Info

NAME

Ekaterina V

SURNAME

Kunitsyna

Publications in SciGraph latest 50 shown

  • 2021-07 Uncooled Photodiodes for Detecting Pulsed Infrared Radiation in the Spectral Range of 0.9–1.8 μm in SEMICONDUCTORS
  • 2020-06-30 Photodiodes for Detecting the Emission of Quantum-Sized Disc Lasers Operating in the Whispering Gallery Modes (2.2–2.3 μm) in SEMICONDUCTORS
  • 2019-01 Electroluminescence in n-GaSb/InAs/p-GaSb Heterostructures with a Single Quantum Well Grown by MOVPE in SEMICONDUCTORS
  • 2018-08-22 GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range in SEMICONDUCTORS
  • 2018-07-06 Photoconductivity Amplification in a Type-II n-GaSb/InAs/p-GaSb Heterostructure with a Single QW in SEMICONDUCTORS
  • 2017-02-24 Measurement of the water content in oil and oil products using IR light-emitting diode–photodiode optrons in TECHNICAL PHYSICS
  • 2016-10-11 Enhancement of the spectral sensitivity of photodiodes for the mid-IR spectral range in SEMICONDUCTORS
  • 2015-12-10 Photoelectric properties of photodiodes based on InAs/InAsSbP heterostructures with photosensitive-area diameters of 0.1–2.0 mm in SEMICONDUCTORS
  • 2015-07-01 Light emitting diode–photodiode optoelectronic pairs based on the InAs/InAsSb/InAsSbP heterostructure for the detection of carbon dioxide in SEMICONDUCTORS
  • 2013-08-07 High-speed photodiodes for the mid-infrared spectral region 1.2–2.4 μm based on GaSb/GaInAsSb/GaAlAsSb heterostructures with a transmission band of 2–5 GHz in SEMICONDUCTORS
  • 2011-04-16 Passivation of infrared photodiodes with alcoholic sulfide solution in SEMICONDUCTORS
  • 2010-05-28 Fast-response p-i-n photodiodes for 0.9–2.4 μm wavelength range in TECHNICAL PHYSICS LETTERS
  • 2010-05-09 Molecular beam epitaxy of thermodynamically metastable GaInAsSb alloys for medium IR-range photodetectors in SEMICONDUCTORS
  • 2008-11-28 Electrical properties of photodiodes based on p-GaSb/p-GaInAsSb/N-GaAlAsSb heterojunctions in TECHNICAL PHYSICS LETTERS
  • 2007-02 Electrical properties of isotype N+-GaSb/n0-GaInAsSb/N+-GaAlAsSb type-II heterojunctions in SEMICONDUCTORS
  • 2005-03 The effect of tellurium diffusion from an n-GaSb:Te substrate on the properties of GaInAsSb solid solutions grown from lead-containing melt in SEMICONDUCTORS
  • 2004-12 Infrared light-emitting diodes based on GaInAsSb solid solutions grown from lead-containing solution-melts in SEMICONDUCTORS
  • 2004-07 Light-emitting diodes based on Ga1−xInxAsySb1−y solid solutions grown from lead-containing melts in TECHNICAL PHYSICS LETTERS
  • 2003-08 High-efficiency GaInAsSb/GaAlAsSb photodiodes for 0.9-to 2.55-µm spectral range with a large-diameter active area in SEMICONDUCTORS
  • 2002-08 Influence of tellurium impurity on the Properties of Ga1−XInXAsYSb1−Y (X>0.22) solid solutions in SEMICONDUCTORS
  • 2002 GaSb-based Materials for Mid-infrared Photodiodes Operating in the 0.9–2.55 μm Spectral Range in MRS ADVANCES
  • 2001-08 The role of lead in growing Ga1−XInXAsYSb1−Y solid solutions by liquid-phase epitaxy in SEMICONDUCTORS
  • 1999-10 Use of lead as a neutral solvent for obtaining solid Ga1−xInxAsySb1−y solutions in TECHNICAL PHYSICS LETTERS
  • 1999-02 Long-wavelength photodiodes based on Ga1−xInxAsySb1−y wit composition near the miscibility boundary in SEMICONDUCTORS
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