V V Bolotov


Ontology type: schema:Person     


Person Info

NAME

V V

SURNAME

Bolotov

Publications in SciGraph latest 50 shown

  • 2017-11 The formation of layers of porous crystalline tin dioxide from a composite on the basis of multiwalled carbon-nanotube arrays in TECHNICAL PHYSICS LETTERS
  • 2017-01 Formation and properties of the buried isolating silicon-dioxide layer in double-layer “porous silicon-on-insulator” structures in SEMICONDUCTORS
  • 2016-03 Study of multilayer carbon nanotubes subjected to the impact of a nanosecond high-energy ion beam in JOURNAL OF SURFACE INVESTIGATION: X-RAY, SYNCHROTRON AND NEUTRON TECHNIQUES
  • 2014-11 Features of the image contrast of doped carbon nanotubes in electrostatic force microscopy in TECHNICAL PHYSICS LETTERS
  • 2014-06 Oxidation of the porous silicon surface under the action of a pulsed ionic beam: XPS and XANES studies in PHYSICS OF THE SOLID STATE
  • 2014-03 Formation of two-layer composite-on-insulator structures based on porous silicon and SnOx. Study of their electrical and gas-sensing properties in SEMICONDUCTORS
  • 2013-10 Study of the interaction mechanisms between absorbed NO2 and por-Si/SnOx nanocomposite layers in SEMICONDUCTORS
  • 2013-07 Origin of the low-frequency band in Raman spectra of multi-walled carbon nanotubes synthesized by the CVD method in PHYSICS OF THE SOLID STATE
  • 2012-01 Electrical and gas sensing properties of por-Si/SnOx nanocomposite layers in SEMICONDUCTORS
  • 2012-01 Formation mechanisms of nanocomposite layers based on multiwalled carbon nanotubes and non-stoichiometric tin oxide in PHYSICS OF THE SOLID STATE
  • 2011-11 Spectroscopic ellipsometry study of porous silicon-tin oxide nanocomposite layers in TECHNICAL PHYSICS
  • 2011-07 Investigation of the hemoglobin adsorption in porous silicon by the ellipsometry method in TECHNICAL PHYSICS
  • 2011-05 Fabrication of por-Si/SnOx nanocomposite layers for gas microsensors and nanosensors in SEMICONDUCTORS
  • 2010-04 Effect of the catalyst on structural and electrophysical characteristics of the layers of nitrogen-containing carbon nanotubes obtained by gas phase synthesis in INORGANIC MATERIALS: APPLIED RESEARCH
  • 2010-01 Adsorption of hemoglobin molecules on porous silicon in TECHNICAL PHYSICS LETTERS
  • 2009-01 Effect of halogens on the formation and properties of the porous silicon layers in SEMICONDUCTORS
  • 2007-08 The effect of NO2 adsorption on optical and electrical properties of porous silicon layers in SEMICONDUCTORS
  • 2002-08 Structure of heterointerfaces and photoluminescence properties of GaAs/AlAs superlattices grown on (311)A and (311)B surfaces: Comparative analysis in SEMICONDUCTORS
  • 2002-01 Formation of silicon nanocrystals with preferred (100) orientation in amorphous Si:H films grown on glass substrates and exposed to nanosecond pulses of ultraviolet radiation in SEMICONDUCTORS
  • 2000-08 Interface corrugation effect on the polarization anisotropy of photoluminescence from (311)A GaAs/AlAs short-period superlattices in JETP LETTERS
  • 2000-06 Phonon-plasmon interaction in tunneling GaAs/AlAs superlattices in JETP LETTERS
  • 2000-01 Transverse optical phonon splitting in GaAs/AlAs superlattices grown on the GaAs(311) surface studied by the method of Raman light scattering in SEMICONDUCTORS
  • 1999-07 Lateral localization of optical phonons in GaAs quantum islands in JETP LETTERS
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