Valentin N Jmerik


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Person Info

NAME

Valentin N

SURNAME

Jmerik

Publications in SciGraph latest 50 shown

  • 2021-04 Two-Dimensional Excitons in Multiple GaN/AlN Monolayer Quantum Wells in JETP LETTERS
  • 2020-12-04 Structural and Dynamical Properties of Short-Period GaN/AlN Superlattices: Experiment and Theory in SEMICONDUCTORS
  • 2020-06 An Increase of Threading Dislocations Filtering Efficiency in Al2O3 Templates with Faceted Surface Morphology During a Growth by Molecular Beam Epitaxy in TECHNICAL PHYSICS LETTERS
  • 2019-11-06 Boson Peak Related to Ga Nanoclusters in AlGaN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy at Ga-Rich Conditions in SEMICONDUCTORS
  • 2018-12-24 Features of the Selective Growth of GaN Nanorods on Patterned c-Sapphire Substrates of Various Configurations in SEMICONDUCTORS
  • 2018-05-09 Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes in SCIENTIFIC REPORTS
  • 2018-04-17 Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands in SEMICONDUCTORS
  • 2018-04-17 Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on μ-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE in SEMICONDUCTORS
  • 2018-02 Spontaneous Formation of Indium Clusters in InN Epilayers Grown by Molecular-Beam Epitaxy in TECHNICAL PHYSICS LETTERS
  • 2017-05 Stress generation and relaxation in (Al,Ga)N/6H-SiC heterostructure grown by plasma-assisted molecular-beam epitaxy in TECHNICAL PHYSICS LETTERS
  • 2016-11-15 AlGaN nanostructures with extremely high quantum yield at 300 K in PHYSICS OF THE SOLID STATE
  • 2016-11-08 AlGaN Nanostructures with Extremely High Room-Temperature Internal Quantum Efficiency of Emission Below 300 nm in JOURNAL OF ELECTRONIC MATERIALS
  • 2016-07-06 Specific features of the cathodoluminescence spectra of AlInGaN QWs, caused by the influence of phase separation and internal electric fields in SEMICONDUCTORS
  • 2016-06 Solar-blind AlxGa1–xN (x > 0.45) p–i–n photodiodes with a polarization-p-doped emitter in TECHNICAL PHYSICS LETTERS
  • 2016-04 X-ray diffractometry of AlN/c-sapphire templates obtained by plasma-activated molecular beam epitaxy in TECHNICAL PHYSICS LETTERS
  • 2015-12-11 III-nitride tunable cup-cavities supporting quasi whispering gallery modes from ultraviolet to infrared in SCIENTIFIC REPORTS
  • 2015-11-04 Temperature switching of cavity modes in InN microcrystals in SEMICONDUCTORS
  • 2015-08-13 Structural and optical properties of PA MBE AlGaN quantum well heterostructures grown on c-Al2O3 by using flux- and temperature-modulated techniques in JOURNAL OF MATERIALS RESEARCH
  • 2015-04-16 Temperature dependences of the contact resistivity in ohmic contacts to n+-InN in SEMICONDUCTORS
  • 2015-03-13 Defect engineering in AlGaN-based UV optoelectronic heterostructures grown on c-Al2O3 by plasma-assisted molecular beam epitaxy in MRS ADVANCES
  • 2015-02-05 Plasmon-induced enhancement of yellow-red luminescence in InGaN/Au nanocomposites in SEMICONDUCTORS
  • 2012-08-06 Quantum-confined stark effect and localization of charge carriers in Al0.3Ga0.7N/Al0.4Ga0.6N quantum wells with different morphologies in SEMICONDUCTORS
  • 2012-05 Solar-blind UV photocathodes based on AlGaN heterostructures with a 300- to 330-nm spectral sensitivity threshold in TECHNICAL PHYSICS LETTERS
  • 2012-05 RHEED monitoring of elastic stresses during MBE growth of group III nitride heterostructures in TECHNICAL PHYSICS LETTERS
  • 2010-01 Multifunction metal-semiconductor nanocomposites in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2009-08-13 Features of molecular beam epitaxy of the GaN (0001) and GaN (000) layers with the use of different methods of activation of nitrogen in SEMICONDUCTORS
  • 2009-03-11 Electrical and optical properties of InN with periodic metallic in insertions in SEMICONDUCTORS
  • 2008-12-17 AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy in SEMICONDUCTORS
  • 2008-05-09 Features of the spatial distribution of indium in InGaN epitaxial layers grown by plasma-assisted molecular beam epitaxy in SEMICONDUCTORS
  • 2008-02-12 Cathodoluminescent investigations of InxGa1−xN layers in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS
  • 2007-12-20 Investigation of InxGa1−xN layers by local methods in MICROCHIMICA ACTA
  • 2007-05 Specific features of electrical properties of the InxGa1 − xN alloy in SEMICONDUCTORS
  • 2007-04 Controlling active nitrogen flux in plasma-assisted molecular beam epitaxy of group III nitrides in TECHNICAL PHYSICS LETTERS
  • 2003-05 Phonon-assisted exciton luminescence in GaN layers grown by MBE and chloride-hydride VPE in SEMICONDUCTORS
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