Elizaveta S Semenova


Ontology type: schema:Person     


Person Info

NAME

Elizaveta S

SURNAME

Semenova

Publications in SciGraph latest 50 shown

  • 2021-08-26 Publisher Correction: Ultra-coherent Fano laser based on a bound state in the continuum in NATURE PHOTONICS
  • 2021-08-12 Ultra-coherent Fano laser based on a bound state in the continuum in NATURE PHOTONICS
  • 2018-12-27 A Search for Asymmetric Barrier Layers for 1550 nm Al-Free Diode Lasers in SEMICONDUCTORS
  • 2018-07-02 Single-source chip-based frequency comb enabling extreme parallel data transmission in NATURE PHOTONICS
  • 2017-10-07 On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of ~1.5 μm on an InP substrate in SEMICONDUCTORS
  • 2017-06-08 Enhancing Optical Forces in InP-Based Waveguides in SCIENTIFIC REPORTS
  • 2017-02-10 Specific features of waveguide recombination in laser structures with asymmetric barrier layers in SEMICONDUCTORS
  • 2016-12-12 Demonstration of a self-pulsing photonic crystal Fano laser in NATURE PHOTONICS
  • 2016-12-09 Ultrahigh-speed Si-integrated on-chip laser with tailored dynamic characteristics in SCIENTIFIC REPORTS
  • 2015-07-01 On the optimization of asymmetric barrier layers in InAlGaAs/AlGaAs laser heterostructures on GaAs substrates in SEMICONDUCTORS
  • 2015-05 The effect of asymmetric barrier layers in the waveguide region on power characteristics of QW lasers in TECHNICAL PHYSICS LETTERS
  • 2015-01-30 Erratum: Slow-light-enhanced gain in active photonic crystal waveguides in NATURE COMMUNICATIONS
  • 2014-09-30 Slow-light-enhanced gain in active photonic crystal waveguides in NATURE COMMUNICATIONS
  • 2012-09-21 Nanoscale Semiconductor Optical Devices in NANO-OPTICS FOR ENHANCING LIGHT-MATTER INTERACTIONS ON A MOLECULAR SCALE
  • 2012-08-06 Effect of asymmetric barrier layers in the waveguide region on the temperature characteristics of quantum-well lasers in SEMICONDUCTORS
  • 2007-06 Stark effect in a multilayer system of coupled InAs/GaAs quantum dots in TECHNICAL PHYSICS LETTERS
  • 2007-01 Direct observation of charge-carrier capture in an array of self-assembled InAs/GaAs quantum dots in BULLETIN OF THE RUSSIAN ACADEMY OF SCIENCES: PHYSICS
  • 2006-11 Photoemission of polarized electrons from InAlGaAs/GaAs superlattices with minimum conduction band offsets in SEMICONDUCTORS
  • 2006-03 Coupling of electron states in the InAs/GaAs quantum dot molecule in SEMICONDUCTORS
  • 2006-03 InAs/InGaNAs/GaNAs QW and QD heterostructures emitting at 1.4–1.8 μm in SEMICONDUCTORS
  • 2005-12 Continuous-wave lasing of single-mode metamorphic quantum dot lasers for the 1.5-μm spectral region in SEMICONDUCTORS
  • 2005-10 Nonequilibrium room-temperature carrier distribution in InAs quantum dots overgrown with thin AlAs/InAlAs layers in SEMICONDUCTORS
  • 2005-07 Stresses in selectively oxidized GaAs/(AlGa)xOy structures in SEMICONDUCTORS
  • 2005-04 Temperature dependence of the effective coefficient of Auger recombination in 1.3 μm InAs/GaAs QD lasers in SEMICONDUCTORS
  • 2005-04 Design and fabrication technology for arrays for vertical-cavity surface-emitting lasers in SEMICONDUCTORS
  • 2004-09 Characteristics of planar diodes based on heavily doped GaAs/AlAs superlattices in the terahertz frequency region in SEMICONDUCTORS
  • 2004-08 Lasing wavelength of quantum dot heterostructures controlled within the 1.3–0.85 μm range by means of high-temperature annealing in TECHNICAL PHYSICS LETTERS
  • 2004-06 High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates in SEMICONDUCTORS
  • 2003-12 Lasing at 1.5 µm in quantum dot structures on GaAs substrates in SEMICONDUCTORS
  • 2003-09 Metamorphic lasers for 1.3-µm spectral range grown on GaAs substrates by MBE in SEMICONDUCTORS
  • 2003-09 Metamorphic modulation-doped InAlAs/InGaAs/InAlAs heterostructures with high electron mobility grown on gaas substrates in SEMICONDUCTORS
  • 2003 1.5 micron InAs quantum dot lasers based on metamorphic InGaAs/GaAs heterostructures. in MRS ADVANCES
  • 2003 1.5 micron InAs quantum dot lasers based on metamorphic InGaAs/GaAsheterostructures. in MRS ADVANCES
  • 2002-11 High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates in SEMICONDUCTORS
  • 2002-09 Experimental observation of splitting of the light and heavy hole bands in elastically strained GaAsN in SEMICONDUCTORS
  • 2002-08 Wavelength of emission from InGaAsN quantum wells as a function of composition of the quaternary compound in SEMICONDUCTORS
  • 2001-10 GaAsN-on-GaAs MBE using a DC plasma source in TECHNICAL PHYSICS
  • 2001-05 Thermodynamic analysis of the growth of GaAsN ternary compounds by molecular beam epitaxy in SEMICONDUCTORS
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