V V Chaldyshev

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Publications in SciGraph latest 50 shown

  • 2018-12 Diffusion Blurring of GaAs Quantum Wells Grown at Low Temperature in SEMICONDUCTORS
  • 2018-04 Optical Properties of AlGaAs/GaAs Resonant Bragg Structure at the Second Quantum State in SEMICONDUCTORS
  • 2018-04 Resonant Optical Reflection from AsSb–AlGaAs Metamaterials and Structures in SEMICONDUCTORS
  • 2016-12 Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs in SEMICONDUCTORS
  • 2016-11 Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence in SEMICONDUCTORS
  • 2016-11 Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells in SEMICONDUCTORS
  • 2015-12 Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures in SEMICONDUCTORS
  • 2015-12 Plasmon resonance in new AsSb–AlGaAs metal–semiconductor metamaterials in SEMICONDUCTORS
  • 2015-11 Study of multiple InAs/GaAs quantum-well structures by electroreflectance spectroscopy in SEMICONDUCTORS
  • 2015-01 Optical lattices of excitons in InGaN/GaN quantum well systems in SEMICONDUCTORS
  • 2014-11 Effect of local structural defects on the precipitation of as in the vicinity of InAs quantum dots in a GaAs matrix in SEMICONDUCTORS
  • 2014-10 Fröhlich resonance in the AsSb/AlGaAs system in PHYSICS OF THE SOLID STATE
  • 2014-06 Measuring femtosecond lifetimes of free charge carriers in gallium arsenide in TECHNICAL PHYSICS LETTERS
  • 2013-09 Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier in SEMICONDUCTORS
  • 2013-09 Resonance Bragg structure with double InGaN quantum wells in PHYSICS OF THE SOLID STATE
  • 2013-08 Effect of annealing on the nonequilibrium carrier lifetime in GaAs grown at low temperatures in SEMICONDUCTORS
  • 2013-08 Optical reflection from the Bragg lattice of AsSb metal nanoinclusions in an AlGaAs matrix in SEMICONDUCTORS
  • 2012-10 Optical properties of GaAs structures containing a periodic system of layers of AsSb metal nanoinclusions in SEMICONDUCTORS
  • 2012-08 Resonance reflection of light by a periodic system of excitons in GaAs/AlGaAs quantum wells in SEMICONDUCTORS
  • 2012-05 Experimental evaluation of the carrier lifetime in GaAs grown at low temperature in SEMICONDUCTORS
  • 2011-12 Electron microscopy of GaAs Structures with InAs and as quantum dots in SEMICONDUCTORS
  • 2011-10 Elastic fields and physical properties of surface quantum dots in PHYSICS OF THE SOLID STATE
  • 2010-09 An (AlGaAs/GaAs/AlGaAs)60 resonant Bragg structure based on the second quantum-confinement level of heavy-hole excitons in quantum wells in SEMICONDUCTORS
  • 2009-12 GaAs structures with InAs and As quantum dots produced in a single molecular beam epitaxy process in SEMICONDUCTORS
  • 2009-10 Formation of dislocation defects in the process of burying of InAs quantum dots into GaAs in SEMICONDUCTORS
  • 2009-08 High-resolution X-ray diffraction studies of the GaAs structures grown at a low temperature and periodically δ-doped with antimony and phosphorus in SEMICONDUCTORS
  • 2009-02 As cluster array formation in GaAs grown by molecular-beam epitaxy at a low temperature and δ-doped with phosphorus in SEMICONDUCTORS
  • 2008-09 Optical spectroscopy of a semi-insulating GaAs/AlGaAs multiple quantum well system near double exciton–polariton and Bragg resonance in JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS
  • 2008 Stress Relaxation Phenomena in Buried Quantum Dots in SELF-ASSEMBLED QUANTUM DOTS
  • 2007-12 Modulation optical spectroscopy of excitons in structures with GaAs multiple quantum wells separated by tunneling-nontransparent barriers in SEMICONDUCTORS
  • 2007-04 Elastic-energy relaxation in heterostructures with strained nanoinclusions in PHYSICS OF THE SOLID STATE
  • 2006-12 Optical reflection and contactless electroreflection from GaAlAs layers with periodically arranged GaAs quantum wells in SEMICONDUCTORS
  • 2006-12 Defects in the GaAs and InGaAs layers grown by low-temperature molecular-beam epitaxy in RUSSIAN PHYSICS JOURNAL
  • 2006-09 Special frequencies in the optical reflectance spectra of resonant Bragg structures in PHYSICS OF THE SOLID STATE
  • 2006-07 Effect of isovalent doping with phosphorus on the cluster formation in gallium arsenide grown by molecular-beam epitaxy at a relatively low temperature in SEMICONDUCTORS
  • 2005-09 Electron traps in thin layers of low-temperature-grown gallium arsenide with As-Sb nanoclusters in SEMICONDUCTORS
  • 2005-01 A study of recombination centers related to As-Sb nanoclusters in low-temperature grown gallium arsenide in SEMICONDUCTORS
  • 2004-04 Capacitance study of electron traps in low-temperature-grown GaAs in SEMICONDUCTORS
  • 2004-01 Excess arsenic and point defects in GaAS grown by molecular beam epitaxy at low temperatures in JOURNAL OF STRUCTURAL CHEMISTRY
  • 2002-12 Elastic behavior of a spherical inclusion with a given uniaxial dilatation in PHYSICS OF THE SOLID STATE
  • 2002-09 Doping of GaAs layers with Si under conditions of low-temperature molecular beam epitaxy in SEMICONDUCTORS
  • 2002-08 Low-Temperature Molecular-Beam Epitaxy of GaAs: Effect of Excess Arsenic on the Structure and Properties of the GaAs Layers in RUSSIAN PHYSICS JOURNAL
  • 2002-06 Micro-raman investigation of the n-dopant distribution in lateral epitaxial overgrown GaN/sapphire (0001) in JOURNAL OF ELECTRONIC MATERIALS
  • 2002-01 Low-temperature molecular beam epitaxy of GaAs: Influence of crystallization conditions on structure and properties of layers in CRYSTALLOGRAPHY REPORTS
  • 2000-09 Accumulation of majority charge carriers in GaAs layers containing arsenic nanoclusters in SEMICONDUCTORS
  • 1999-10 Influence of indium doping on the formation of silicon-(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures in SEMICONDUCTORS
  • 1999-08 Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy in SEMICONDUCTORS
  • 1998-10 Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy in SEMICONDUCTORS
  • 1998-10 Accumulation of electrons in GaAs layers grown at low temperatures and containing arsenic clusters in SEMICONDUCTORS
  • 1998-09 Structure and properties of epitaxial GaAs and InGaAs films grown by low-temperature molecular-beam epitaxy in RUSSIAN PHYSICS JOURNAL
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